150mm 6 ʻīniha 0.7mm 0.5mm Sapphire Wafer Substrate Ka lawe C-Plane SSP/DSP
Nā noi
ʻO nā noi no nā wafers sapphire 6-ini:
1. LED manufacturing: hiki ke hoʻohana 'ia ka wafer sapphire e like me ka substrate o LED chips, a me kona paakiki a me ka thermal conductivity hiki ke hoʻoikaika i ka paʻa a me ka lawelawe ola o LED chips.
2. Laser manufacturing: Hiki ke hoʻohana ʻia ka wafer Sapphire ma ke ʻano he substrate o ka laser, e kōkua i ka hoʻomaikaʻi ʻana i ka hana o ka laser a hoʻolōʻihi i ke ola lawelawe.
3. Semiconductor manufacturing: Hoʻohana nuiʻia nā wafers Sapphire i ka hanaʻana i nā mea uila a me nā mea optoelectronic, me ka synthesis optical, nā pūnaewele solar, nā mea uila uila kiʻekiʻe, etc.
4. Nā noi ʻē aʻe: Hiki ke hoʻohana ʻia ʻo Sapphire wafer no ka hana ʻana i ka pale paʻi, nā mea optical, nā kiʻi ʻoniʻoni ʻoniʻoni solar a me nā huahana ʻenehana kiʻekiʻe.
Hōʻike
Mea waiwai | Kiʻekiʻe maʻemaʻe hoʻokahi aniani Al2O3, sapphire wafer. |
Anana | 150 mm +/- 0.05 mm, 6 iniha |
mānoanoa | 1300 +/- 25 um |
Kūlana | mokulele C (0001) mai ka mokulele M (1-100) 0.2 +/- 0.05 degere |
Kūlana palahalaha mua | He mokulele +/- 1 degere |
Ka lōʻihi pālahalaha mua | 47.5 mm +/- 1 mm |
Huina Manoanoa (TTV) | <20 um |
Kakaka | <25 um |
Warp | <25 um |
ʻO ka hoʻonui wela wela | 6.66 x 10-6 / °C like me ke koʻi C, 5 x 10-6 /°C e kū pono ana i ke koʻi C. |
Ka ikaika dielectric | 4.8 x 105 V/cm |
Dielectric mau | 11.5 (1 MHz) ma ke koʻi C, 9.3 (1 MHz) e kū pono i ke koʻi C |
Dielectric Loss Tangent (aka dissipation factor) | emi iho ma mua o 1 x 10-4 |
ʻO ka hoʻoili wela | 40 W/(mK) ma 20 ℃ |
ʻO ka poni | ʻaoʻao hoʻokahi i hoʻoliʻi ʻia (SSP) a i ʻole ʻaoʻao pālua ʻia (DSP) Ra <0.5 nm (e AFM). ʻO ka ʻaoʻao hope o ka wafer SSP he lepo maikaʻi i Ra = 0.8 - 1.2 um. |
Ka lawe ʻana | 88% +/-1 % @460 nm |