6'īniha 150mm Silicon Carbide SiC Wafers ʻano 4H-N no ka noiʻi hana MOS a i ʻole SBD a me ka papa Dummy

Wehewehe Pōkole:

ʻO ka substrate kristal hoʻokahi silicon carbide 6-'īniha he mea hana kiʻekiʻe me nā waiwai kino a me nā kemika maikaʻi loa. Hana ʻia mai ka mea kristal hoʻokahi silicon carbide maʻemaʻe kiʻekiʻe, hōʻike ia i ka conductivity thermal kiʻekiʻe, ke kūpaʻa mechanical, a me ke kūpaʻa wela kiʻekiʻe. ʻO kēia substrate, i hana ʻia me nā kaʻina hana hana pololei a me nā mea kiʻekiʻe, ua lilo ia i mea makemake nui ʻia no ka hana ʻana i nā mea uila kiʻekiʻe ma nā ʻano like ʻole.


Nā hiʻohiʻona

Nā Kahua Noi

He kuleana koʻikoʻi ka substrate kristal hoʻokahi silicon carbide 6-'īniha i nā ʻoihana he nui. ʻO ka mea mua, hoʻohana nui ʻia ia i ka ʻoihana semiconductor no ka hana ʻana i nā mea uila mana kiʻekiʻe e like me nā transistors mana, nā kaapuni i hoʻohui ʻia, a me nā modula mana. ʻO kona conductivity thermal kiʻekiʻe a me ke kūpaʻa wela kiʻekiʻe e hiki ai ke hoʻokuʻu maikaʻi i ka wela, e hopena ana i ka hoʻomaikaʻi ʻana i ka pono a me ka hilinaʻi. ʻO ka lua, he mea nui nā wafers silicon carbide i nā kahua noiʻi no ka hoʻomohala ʻana i nā mea hou a me nā mea hana. Eia kekahi, loaʻa i ka wafer silicon carbide nā noi nui ma ke kahua o optoelectronics, me ka hana ʻana o nā LED a me nā diodes laser.

Nā kikoʻī huahana

ʻO ke anawaena o ka substrate kristal hoʻokahi silicon carbide 6-'īniha he 6 'īniha (ma kahi o 152.4 mm). ʻO ka ʻoʻoleʻa o ka ʻili he Ra < 0.5 nm, a ʻo ka mānoanoa he 600 ± 25 μm. Hiki ke hoʻopilikino ʻia ka substrate me ke conductivity ʻano-N a i ʻole P, ma muli o nā koi o ka mea kūʻai. Eia kekahi, hōʻike ia i ke kūpaʻa mechanical kūikawā, hiki ke kū i ke kaomi a me ka haʻalulu.

Anawaena 150±2.0mm(6 ʻīniha)

Mānoanoa

350 μm±25μm

Hoʻonohonoho

Ma ke axis: <0001>±0.5°

Ma waho o ke axis:4.0° i ka ʻaoʻao o 1120±0.5°

Polytype 4H

Ke kū'ē'ē (Ω·cm)

4H-N

0.015~0.028 Ω·cm/0.015~0.025ohm·cm

4/6H-SI

>1E5

Ke kuhikuhi pālahalaha mua

{10-10}±5.0°

Ka lōʻihi pālahalaha mua (mm)

47.5 mm±2.5 mm

Ka lihi

Chamfer

TTV/Kakaka/Warp (um)

≤15 /≤40 /≤60

AFM Front (Si-face)

Polani Ra≤1 nm

CMP Ra≤0.5 nm

LTV

≤3μm (10mm * 10mm)

≤5μm (10mm * 10mm)

≤10μm (10mm * 10mm)

TTV

≤5μm

≤10μm

≤15μm

ʻIli ʻalani/nā lua/nā māwae/haumia/nā ʻila/nā kaha

ʻAʻohe ʻAʻohe ʻAʻohe

nā indents

ʻAʻohe ʻAʻohe ʻAʻohe

ʻO ka substrate kristal hoʻokahi silicon carbide 6-'īniha he mea hana kiʻekiʻe i hoʻohana nui ʻia i nā ʻoihana semiconductor, noiʻi, a me optoelectronics. Hāʻawi ia i ka conductivity thermal maikaʻi loa, ke kūpaʻa mechanical, a me ke kūpaʻa wela kiʻekiʻe, e kūpono ana no ka hana ʻana i nā mea uila mana kiʻekiʻe a me ka noiʻi mea hou. Hāʻawi mākou i nā kikoʻī like ʻole a me nā koho hoʻopilikino e hoʻokō i nā koi like ʻole o nā mea kūʻai aku.E kāhea mai iā mākou no nā kikoʻī hou aku e pili ana i nā wafers carbide silicon!

Kiʻikuhi kikoʻī

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WechatIMG569_ (2)

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