6inihi 150mm Silicon Carbide SiC Wafers 4H-N ʻano no MOS a i ʻole SBD Production Research a me Dummy grade

ʻO ka wehewehe pōkole:

ʻO ka 6-inch silicon carbide one crystal substrate he mea hana kiʻekiʻe me nā waiwai kino a me nā mea kemika.Hana ʻia mai ke kiʻekiʻe-maʻemaʻe silicon carbide mea aniani hoʻokahi, hōʻike ʻo ia i ka conductivity thermal maikaʻi, kūpaʻa mechanical, a me ke kūpaʻa wela kiʻekiʻe.ʻO kēia substrate, i hana ʻia me nā kaʻina hana kikoʻī a me nā mea kiʻekiʻe kiʻekiʻe, ua lilo ia i mea makemake no ka hana ʻana i nā mea uila uila kiʻekiʻe ma nā ʻano āpau.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā kahua noi

ʻO ka 6-inch silicon carbide one crystal substrate he hana koʻikoʻi i nā ʻoihana he nui.ʻO ka mea mua, hoʻohana nui ʻia ia i ka ʻoihana semiconductor no ka hana ʻana i nā mea uila uila kiʻekiʻe e like me nā transistors mana, nā ʻāpana hoʻohui, a me nā modula mana.ʻO kāna conductivity thermal kiʻekiʻe a me ke kūpaʻa wela kiʻekiʻe e hiki ai i ka hoʻoheheʻe wela ʻoi aku ka maikaʻi, ka hopena i ka hoʻomaikaʻi maikaʻi ʻana a me ka hilinaʻi.ʻO ka lua, he mea nui nā wafers silicon carbide i nā kahua noiʻi no ka hoʻomohala ʻana i nā mea hou a me nā mea hana.Hoʻohui ʻia, ʻike ka wafer silicon carbide i nā noi nui ma ke kahua o ka optoelectronics, me ka hana ʻana o nā LED a me nā diodes laser.

Nā Kūlana Huahana

ʻO ka 6-inch silicon carbide one crystal substrate he 6 iniha ke anawaena (ma kahi o 152.4 mm).ʻO ka roughness ʻili he Ra <0.5 nm, a ʻo ka mānoanoa he 600 ± 25 μm.Hiki ke hoʻopilikino ʻia ka substrate me ka conductivity N-type a i ʻole P-type, e pili ana i nā koi o ka mea kūʻai aku.Eia kekahi, hōʻike ia i ke kūpaʻa mechanical kūikawā, hiki ke kū i ke kaomi a me ka haʻalulu.

Anawaena		150±2.0mm(6 iniha)
mānoanoa		350 μm±25μm
Kūlana		Ma ke axis: <0001>±0.5°		Ke axis:4.0° a hiki i 1120±0.5°
Polytype		4H
Kū'ē (Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Kūlana palahalaha mua		{10-10}±5.0°
ʻO ka lōʻihi pālahalaha mua (mm)		47.5 mm±2.5 mm
Kaulana		Chamfer
TTV/Kakaka/Warp (um)		≤15 /≤40 /≤60
AFM Front (Si-maka)		Polani Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
ʻIli ʻalani/mau lua/ māwae/ ʻinoʻino		ʻAʻohe	ʻAʻohe		ʻAʻohe
indents		ʻAʻohe	ʻAʻohe		ʻAʻohe

ʻO ka 6-inch silicon carbide single crystal substrate he mea hana kiʻekiʻe i hoʻohana nui ʻia i nā ʻoihana semiconductor, noiʻi, a me optoelectronics.Hāʻawi ia i ka conductivity thermal maikaʻi loa, ke kūpaʻa mechanical, a me ke kūpaʻa wela kiʻekiʻe, e kūpono ana ia no ka hana ʻana i nā mea uila mana kiʻekiʻe a me ka noiʻi mea hou.Hāʻawi mākou i nā kikoʻī like ʻole a me nā koho hoʻoponopono e hoʻokō i nā koi o nā mea kūʻai aku.E kelepona mai iā mākou no nā kikoʻī hou aku e pili ana i nā wafers carbide silicon!