8Inch 200mm 4H-N SiC Wafer Conductive dummy papa noiʻi

Ma muli o kāna mau waiwai kino a me ka uila, hoʻohana ʻia ka 200mm SiC wafer semiconductor material e hana i nā mea uila kiʻekiʻe, kiʻekiʻe-mehana, radiation-resistant, a me nā mea uila uila kiʻekiʻe. Ke emi mālie nei ke kumukūʻai substrate 8inch SiC i ka ulu ʻana o ka ʻenehana a ulu ka noi. Ke alakaʻi nei nā hoʻomohala ʻenehana hou i ka hana ʻana i ka nui o ka hana ʻana o 200mm SiC wafers. ʻO nā pōmaikaʻi nui o nā mea semiconductor wafer SiC i ka hoʻohālikelike ʻana me nā wafers Si a me GaAs: ʻO ka ikaika o ke kahua uila o 4H-SiC i ka wā o ka hāʻule ʻana o ka avalanche ʻoi aku ka nui ma mua o ka nui o nā waiwai kūpono no Si a me GaAs. Ke alakaʻi nei kēia i kahi emi nui o ka resistivity ma ka mokuʻāina ʻo Ron. ʻO ka resistivity haʻahaʻa ma ka mokuʻāina, i hui pū ʻia me ke kiʻekiʻe o kēia manawa a me ka conductivity thermal, hiki ke hoʻohana i ka make liʻiliʻi loa no nā mea mana. ʻO ka conductivity thermal kiʻekiʻe o SiC e hōʻemi i ka pale wela o ka chip. ʻO nā waiwai uila o nā mea i hoʻokumu ʻia i nā wafers SiC e paʻa loa i ka manawa a ma ka paʻa wela, kahi e hōʻoia ai i ka hilinaʻi kiʻekiʻe o nā huahana. Paʻa loa ka Silicon carbide i ka radiation paʻakikī, ʻaʻole ia e hoʻohaʻahaʻa i nā waiwai uila o ka chip. ʻO ka palena kiʻekiʻe o ka wela hana o ke aniani (ʻoi aku ma mua o 6000C) hiki iā ʻoe ke hana i nā mea hilinaʻi loa no nā kūlana hana paʻakikī a me nā noi kūikawā. I kēia manawa, hiki iā mākou ke hoʻolako i nā ʻāpana liʻiliʻi 200mmSiC wafers me ka hoʻomau mau a loaʻa kahi waiwai i loko o ka hale kūʻai.