8inihi 200mm Silicon Carbide SiC Wafers 4H-N ʻano ʻAno Hana ʻia 500um mānoanoa

Nui: 8 iniha;

Anawaena: 200mm±0.2;

Mānoanoa: 500um±25;

Ke Kūlana Ili: 4 i ka [11-20]±0.5°;

Notch orientation:[1-100]±1°；

Ka hohonu notch: 1±0.25mm;

Micropipe: <1cm2;

Nā Papa Hex: ʻAʻohe ʻae ʻia;

Kū'ē: 0.015 ~ 0.028Ω;

EPD:<8000cm2;

TED:<6000cm2

BPD:<2000cm2

TSD:<1000cm2

SF: ʻāpana<1%

TTV≤15um；

Warp≤40um；

Kakaka≤25um；

Nā wahi poli: ≤5%;

Kaʻala: <5 a me ka lōʻihi huila< 1 wafer anawaena;

Kipa/Indents: ʻAʻohe ʻae D>0.5mm Laulā a me ka hohonu;

Nā māwae: ʻAʻohe;

ʻAʻohe

Wafer lihi: Chamfer;

Hoʻopau i ka ʻili: Polani ʻaoʻao ʻelua, Si Face CMP;

Pākuʻi: Nui-wafer Cassette a i ʻole ka pahu Wafer hoʻokahi;

ʻO nā pilikia o kēia manawa i ka hoʻomākaukau ʻana o 200mm 4H-SiC crystals mainl

1) ʻO ka hoʻomākaukau ʻana i nā kristal hua kiʻekiʻe 200mm 4H-SiC;

2) Large nui wela kahua non-uniformity a me ka nucleation kaʻina hana mana;

3) ʻO ka maikaʻi o ka lawe ʻana a me ka ulu ʻana o nā ʻāpana kinoea i loko o nā ʻōnaehana ulu kristal nui;

4) Ka māhā ʻana a me ka hoʻomāhuahua ʻana o nā hemahema ma muli o ka piʻi ʻana o ke kaumaha wela.

No ka lanakila ʻana i kēia mau paʻakikī a loaʻa i ke kiʻekiʻe 200mm SiC wafersolutions i manaʻo ʻia:

Ma ke ʻano o ka hoʻomākaukau ʻana i nā hua aniani 200mm, ʻo ka mahina ʻai kūpono o ka fieldflow, a me ka hoʻonui ʻana o ka ʻaha kanaka i aʻo ʻia a hoʻolālā ʻia e lawe i ka maikaʻi aniani a me ka hoʻonui ʻana i ka nui; E hoʻomaka ana me ka 150mm SiC se:d crystal, e hoʻokō i ka hoʻololi ʻana i nā hua kristal e hoʻonui mālie i ka crystasize SiC a hiki i ka 200mm; Ma o ka ulu ʻana o ke aniani a me ke kaʻina hana, e hoʻomaikaʻi mālie i ka maikaʻi o ke aniani i loko o ka wahi e hoʻonui ana i ke aniani, a hoʻomaikaʻi i ka maikaʻi o nā kristal hua 200mm.

Ma nā ʻōlelo o 200mm conductive crystal a me ka hoʻomākaukau substrate, ua hoʻopaʻa ʻia ka noiʻi i ka pae wela a me ka hoʻolālā kahua kahe no ka nui crystalgrowth nui, alakaʻi i ka ulu ʻana o ka kristal SiC conductive 200mm, a me ka mālama ʻana i ka like ʻana o ka doping. Ma hope o ka hana ʻino ʻana a me ka hana ʻana o ke aniani, ua loaʻa kahi 8-inchelectricaly conductive 4H-SiC ingot me kahi anawaena maʻamau. Ma hope o ka ʻoki ʻana, ka wili ʻana, ka polishing, ka hana ʻana no ka loaʻa ʻana o nā wafers SiC 200mm me ka mānoanoa o 525um a i ʻole