Hoʻopilikino ʻia ʻo SiC Seed Crystal Substrates Dia 205/203/208 4H-N Type no nā kamaʻilio Optical

Hoʻopilikino ʻia ʻo SiC Seed Crystal Substrates Dia 205/203/208 ʻAno 4H-N no nā kamaʻilio Optical kiʻi i hōʻike ʻia.

ʻO ka wehewehe pōkole:

ʻO SiC (silicon carbide) nā mea hoʻoheheʻe kristal, ma ke ʻano he mea lawe nui i nā mea semiconductor o ka hanauna ʻekolu, e hoʻohana i kā lākou mau mea wela wela (4.9 W/cm·K), ikaika ikaika ākea kiʻekiʻe (2-4 MV/cm), a me ka bandgap ākea (3.2 eV) e lilo i kumu kumu no ka optoelectronics, nā kaʻa kamaʻilio aerospace, a me 5G. Ma o nā ʻenehana hana holomua e like me ka lawe ʻana i ka mahu kino (PVT) a me ka wai epitaxy (LPE), hāʻawi ʻo XKH i ka 4H/6H-N-type, semi-insulating, a me 3C-SiC polytype seed substrates i nā ʻano wafer 2–12-inihi, me nā micropipe densities ma lalo o 0.3 cm⁻2 a me ka Ω. ʻoʻoleʻa (Ra) <0.2 nm. ʻO kā mākou mau lawelawe e pili ana i ka ulu heteroepitaxial (eg, SiC-on-Si), nanoscale precision machining (± 0.1 μm tolerance), a me ka hāʻawi wikiwiki ʻana i ka honua, e hāʻawi ana i nā mea kūʻai aku e lanakila i nā pale ʻenehana a hoʻolōʻihi i ka neutrality carbon a me ka hoʻololi naʻauao.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Nā palena ʻenehana

Wafer anoano silikoni
Polytype	4H
Ua hewa ka hoʻonohonoho ʻana o ka ʻili	4° i ka<11-20>±0.5º
Kū'ē	hoʻopilikino
Anawaena	205±0.5mm
mānoanoa	600±50μm
ʻoʻoleʻa	CMP, Ra≤0.2nm
Micropipe Density	≤1 ea/cm2
Nā ʻōpala	≤5, Ka nui Length≤2 * Anawaena
Nā ʻāpana lihi/indents	ʻAʻohe
Hoailona laser mua	ʻAʻohe
Nā ʻōpala	≤2, Ka huina Length≤Diameter
Nā ʻāpana lihi/indents	ʻAʻohe
Nā wahi polytype	ʻAʻohe
Hōʻailona laser hope	1mm (mai ka lihi luna)
Kaulana	Chamfer
Hoʻopili ʻana	ʻO ka pīkī wafer nui

Nā ʻano nui

1. Hoʻokumu Crystal a me ka Hana Uila

· Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (e laʻa, 6H/15R), me ka XRD kulu ʻana i ka laula piha i ka hapalua kiʻekiʻe (FWHM) ≤32.7 arcsec.

· Ke Kaʻa Kaʻa Kiʻekiʻe: Electron mobility o 5,400 cm²/V·s (4H-SiC) a me ka neʻe ʻana o ka lua o 380 cm²/V·s, e hiki ai i nā hoʻolālā hāmeʻa kiʻekiʻe.

· Paʻa Paʻa: E kū i ka 1 MeV neutron irradiation me ka paepae pōʻino hoʻoneʻe o 1 × 10¹⁵ n/cm², kūpono no ka aerospace a me nā noi nuklea.

2. Na Waiwai a me Mechanical

· Kūikawā Thermal Conductivity: 4.9 W/cm·K (4H-SiC), pākolu o ke kilika, kākoʻo i ka hana ma luna o 200°C.

· Ka Hoʻonui Hoʻonui Haʻahaʻa Haʻahaʻa: CTE o 4.0 × 10⁻⁶ / K (25-1000 ° C), e hōʻoia ana i ka hoʻopili ʻana me ka pahu silicon-based a me ka hōʻemi ʻana i ke kaumaha wela.

3. ʻO ka hoʻomalu hewa a me ka pololei o ka hana ʻana

· Mikopipe Density: <0.3 cm⁻² (8-inihi wafers), dislocation density <1,000 cm⁻² (hōʻoia ma o KOH etching).

· Kūlana o ka ʻili: CMP-polled a hiki i ka Ra <0.2 nm, e hālāwai ana i nā koi ʻana o EUV lithography-grade flatness.

Nā noi nui

Domaine	Nā hiʻohiʻona noiʻi	Nā Pono ʻenehana
Nā Kūkākūkā Optical	Nā lasers 100G/400G, nā modules hybrid photonics silika	Hiki i nā substrate hua InP ke hiki i ka bandgap pololei (1.34 eV) a me Si-based heteroepitaxy, e hōʻemi ana i ka nalowale o ka hoʻopili ʻana.
Nā Kaʻa ʻEhuka Hou	800V nā mea hoʻohuli kiʻekiʻe-volt, nā mea hoʻoili ma luna o ka moku (OBC)	ʻO nā substrate 4H-SiC kū i ka> 1,200 V, e hōʻemi ana i nā poho conduction e 50% a me ka nui o ka ʻōnaehana e 40%.
5G kamaʻilio	Nā hāmeʻa RF hawewe-milimeter (PA/LNA), nā mea hoʻonui mana o ke kahua kahua	ʻO nā substrate Semi-insulating SiC (resistivity>10⁵ Ω·cm) hiki ke hoʻohui i ka passive kiʻekiʻe (60 GHz+).
Lako Hana Hana	ʻO nā mea ʻike wela kiʻekiʻe, nā mea hoʻololi o kēia manawa, nā mākaʻikaʻi nuklea reactor	Hāʻawi nā substrate hua InSb (0.17 eV bandgap) i ka sensitivity magnetic a hiki i 300%@10 T.

Nā Pōmaikaʻi Nui

Hāʻawi ka SiC (silicon carbide) i ka hana hoʻokō like ʻole me 4.9 W/cm·K thermal conductivity, 2-4 MV/cm breakdown field strength, a me 3.2 eV wide bandgap, hiki i ka mana kiʻekiʻe, kiʻekiʻe-frequency, a me ka wela wela. E hōʻike ana i ka ʻeleʻele micropipe ʻole a me <1,000 cm⁻² dislocation density, ʻo kēia mau substrates e hōʻoia i ka hilinaʻi i nā kūlana koʻikoʻi. Kākoʻo kā lākou mau mea kemika a me CVD-compatible surfaces (Ra <0.2 nm) i ka ulu heteroepitaxial holomua (e laʻa, SiC-on-Si) no nā ʻōnaehana optoelectronics a me EV.

Nā lawelawe XKH:

1. Hana ʻia i hana ʻia

· Nā ʻano wafer maʻalahi: 2–12-ʻīniha wafer me nā ʻoki pōʻai, ʻehā, a i ʻole ke ʻano maʻamau (± 0.01 mm ka hoʻomanawanui).

· Hoʻoponopono Doping: Naikokene pololei (N) a me ka alumini (Al) doping ma o CVD, e loaʻa ana nā pae resistivity mai 10⁻³ a i 10⁶ Ω·cm.

2. Nā ʻenehana kaʻina hana kiʻekiʻeʻ

· Heteroepitaxy: SiC-on-Si (kūpono me 8-inch silicon laina) a me SiC-on-Diamond (thermal conductivity >2,000 W/m·K).

· Hoʻopau Defect: Hydrogen etching a me annealing e hōʻemi i ka micropipe/density defects, hoʻomaikaʻi i ka hua wafer i>95%.

3. Nā Pūnaehana Hoʻoponopono Ponoʻ

· Ka Ho'āʻo Hope-a-End: Raman spectroscopy (polytype verification), XRD (crystallinity), a me SEM (defect analysis).

· Nā palapala hōʻoia: Kūlike me AEC-Q101 (automotive), JEDEC (JEDEC-033), a me MIL-PRF-38534 (koa-grade).

4. Kākoʻo Kākoʻo Pūnaeweleʻ

· Ka nui o ka hana ʻana: Ka hoʻopuka ʻana i kēlā me kēia mahina > 10,000 wafers (60% 8-ʻīniha), me 48-hola hoʻopuka pilikia.

· Pūnaehana Logistics: Hoʻopili ʻia ma ʻEulopa, ʻAmelika ʻĀkau, a me ʻAsia-Pākīpika ma o ka ukana ea/kai me ka hoʻopaʻa ʻana i ka wela.

5. Hoʻomohala hui ʻenehanaʻ

· Nā Labs R&D Hui: E hui pū ma ka hoʻopili ʻana i ka ʻōnaewele ʻo SiC power module (e laʻa, ka hoʻohui pū ʻana o DBC substrate).

· Laikini IP: Hāʻawi i ka laikini ʻenehana ulu epitaxial GaN-on-SiC RF e hōʻemi i nā kumukūʻai R&D.

Hōʻuluʻulu manaʻo

ʻO SiC (silicon carbide) nā kumulāʻau kristal, ma ke ʻano he mea hoʻolālā, ke hoʻololi hou nei i nā kaulahao ʻoihana honua ma o ka ulu ʻana i ka ulu aniani, ka mana kīnā, a me ka hoʻohui heterogeneous. Ma ka hoʻomau mau ʻana i ka hoʻemi ʻana i ka wafer defect, ka hoʻonui ʻana i ka hana 8-inch, a me ka hoʻonui ʻana i nā platform heteroepitaxial (e laʻa, SiC-on-Diamond), hāʻawi ʻo XKH i nā hopena hilinaʻi kiʻekiʻe, kumukūʻai kūpono no ka optoelectronics, ka ikehu hou, a me ka hana holomua. ʻO kā mākou kūpaʻa i ka hana hou e hōʻoia i nā mea kūʻai aku e alakaʻi i ka neutrality kalapona a me nā ʻōnaehana naʻauao, e alakaʻi ana i ka wā e hiki mai ana o ka wide-bandgap semiconductor kaiaola.