ʻAno 205/203/208 4H-N no nā kamaʻilio Optical i hoʻopilikino ʻia ʻo SiC Seed Crystal

Nā Substrates Crystal Seed SiC i hoʻopilikino ʻia Dia 205/203/208 4H-N ʻAno no ke kamaʻilio Optical Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO nā substrates kristal hua SiC (silicon carbide), ma ke ʻano he mea lawe nui o nā mea semiconductor hanauna ʻekolu, hoʻohana i kā lākou conductivity thermal kiʻekiʻe (4.9 W/cm·K), ka ikaika kahua breakdown ultra-kiʻekiʻe (2-4 MV/cm), a me ka bandgap ākea (3.2 eV) e lawelawe ma ke ʻano he mau mea kumu no ka optoelectronics, nā kaʻa ikehu hou, nā kamaʻilio 5G, a me nā noi aerospace. Ma o nā ʻenehana hana holomua e like me ka halihali mahu kino (PVT) a me ka epitaxy pae wai (LPE), hāʻawi ʻo XKH i nā substrates hua polytype 4H/6H-N-type, semi-insulating, a me 3C-SiC i nā ʻano wafer 2-12-'īniha, me nā densities micropipe ma lalo o 0.3 cm⁻², resistivity mai 20-23 mΩ·cm, a me ka ʻili roughness (Ra) <0.2 nm. ʻO kā mākou mau lawelawe e komo pū me ka ulu ʻana o ka heteroepitaxial (e laʻa, SiC-on-Si), ka mīkini kikoʻī nanoscale (± 0.1 μm tolerance), a me ka lawe wikiwiki ʻana i ka honua holoʻokoʻa, e hoʻoikaika ana i nā mea kūʻai aku e lanakila ma luna o nā pale loea a hoʻolalelale i ka neutrality carbon a me ka hoʻololi akamai.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā palena loea

Wafer hua silicon carbide
Polytype	4H
Kuhihewa o ke kuhikuhi ʻana o ka ʻili	4° ma kahi o<11-20>±0.5º
Ke kū'ē ʻana	hoʻopilikino ʻana
Anawaena	205±0.5mm
Mānoanoa	600±50μm
ʻOʻoleʻa	CMP,Ra≤0.2nm
Ka nui o ka micropipe	≤1 kēlā me kēia/cm2
Nā ʻōpala	≤5, Ka lōʻihi holoʻokoʻa ≤2 * Anawaena
Nā ʻāpana/indent lihi	ʻAʻohe
Ka māka laser mua	ʻAʻohe
Nā ʻōpala	≤2, Ka lōʻihi o ka lōʻihi≤Diameter
Nā ʻāpana/indent lihi	ʻAʻohe
Nā wahi Polytype	ʻAʻohe
Ka māka laser hope	1mm (mai ka lihi luna)
Ka lihi	Chamfer
Ka hoʻopili ʻana	Kaseti wafer multi-wafer

Nā ʻano koʻikoʻi

1. ʻAno Crystal a me ka Hana Uila

· Paʻa Crystallographic: 100% 4H-SiC polytype dominance, ʻaʻohe multicrystalline inclusions (e laʻa, 6H/15R), me ka XRD rocking curve piha-laulā ma ka hapalua-kiʻekiʻe (FWHM) ≤32.7 arcsec.

· Ka Neʻe ʻana o ka Mea Lawe Kiʻekiʻe: Ka neʻe ʻana o ka uila he 5,400 cm²/V·s (4H-SiC) a me ka neʻe ʻana o ka lua he 380 cm²/V·s, e hiki ai ke hoʻolālā i nā mea hana alapine kiʻekiʻe.

·Paʻakikī o ka Radiation: Kū i ka hoʻomālamalama neutron 1 MeV me ka paepae hōʻino neʻe o 1 × 10¹⁵ n/cm², kūpono no nā noi aerospace a me nā noi nukelea.

2. Nā Waiwai Wela a me nā Waiwai Mekanika

· Ka Hoʻokele Wela Kūikawā: 4.9 W/cm·K (4H-SiC), ʻekolu ka nui o ka silicon, e kākoʻo ana i ka hana ma luna o 200°C.

· Ka helu hoʻonui wela haʻahaʻa: CTE o 4.0 × 10⁻⁶/K (25–1000°C), e hōʻoiaʻiʻo ana i ka launa pū ʻana me ka ʻōpala silicon-based a me ka hoʻēmi ʻana i ke kaumaha wela.

3. Ka Mana ʻana i nā Kipi a me ka Pololei o ka Hana ʻana

· Ka nui o ka Micropipe: <0.3 cm⁻² (nā wafers 8-'īniha), ka nui o ka dislocation <1,000 cm⁻² (i hōʻoia ʻia ma o ke kālai ʻana o KOH).

· ʻAno o ka ʻIli: CMP-polished iā Ra <0.2 nm, e hoʻokō ana i nā koi pālahalaha EUV lithography-grade.

Nā Noi Koʻikoʻi

Kikowaena	Nā hiʻohiʻona noi	Nā Pōmaikaʻi ʻenehana
Nā Kamaʻilio Optical	Nā lasers 100G/400G, nā modula hybrid silicon photonics	Hoʻokomo nā substrates hua InP i ka bandgap pololei (1.34 eV) a me ka heteroepitaxy e pili ana i Si, e hōʻemi ana i ka nalowale o ka hoʻopili optical.
Nā Kaʻa Ikehu Hou	Nā mea hoʻohuli uila kiʻekiʻe 800V, nā mea hoʻoili uila (OBC)	Hiki i nā substrates 4H-SiC ke kū i ka >1,200 V, e hōʻemi ana i nā pohō conduction ma 50% a me ka nui o ka ʻōnaehana ma 40%.
Nā Kamaʻilio 5G	Nā mea hana RF nalu milimita (PA/LNA), nā mea hoʻonui mana kikowaena kumu	ʻO nā substrates SiC semi-insulating (resistivity >10⁵ Ω·cm) e hiki ai i ka hoʻohui passive alapine kiʻekiʻe (60 GHz+).
Nā Lako Hana ʻOihana	Nā mea ʻike wela kiʻekiʻe, nā mea hoʻololi o kēia au, nā mea nānā reactor nukelea	Hāʻawi nā substrates hua InSb (0.17 eV bandgap) i ka ʻike magnetic a hiki i ka 300%@10 T.

Nā Pōmaikaʻi Koʻikoʻi

Hāʻawi nā substrates kristal hua SiC (silicon carbide) i ka hana i kūlike ʻole me ka conductivity thermal 4.9 W/cm·K, ka ikaika o ke kahua breakdown 2-4 MV/cm, a me ka bandgap ākea 3.2 eV, e hiki ai ke hoʻohana i ka mana kiʻekiʻe, alapine kiʻekiʻe, a me nā noi wela kiʻekiʻe. Me ka ʻole o ka micropipe density a me ka <1,000 cm⁻² dislocation density, hōʻoia kēia mau substrates i ka hilinaʻi i nā kūlana koʻikoʻi. Kākoʻo ko lākou inertness kemika a me nā ʻili CVD-compatible (Ra <0.2 nm) i ka ulu heteroepitaxial holomua (e laʻa, SiC-on-Si) no nā optoelectronics a me nā ʻōnaehana mana EV.

Nā lawelawe XKH:

1. Hana Hana Kūikawā

· Nā ʻAno Wafer Hiki ke Hoʻololi: nā wafer 2–12-'īniha me nā ʻoki poepoe, huinahā, a i ʻole nā ʻoki i hana kūikawā ʻia (ʻae ʻia ± 0.01 mm).

· Ka Mana Hoʻohuihui: ʻO ka hoʻohuihui pololei ʻana o ka naikokene (N) a me ka alumini (Al) ma o CVD, e hoʻokō ana i nā pae resistivity mai 10⁻³ a 10⁶ Ω·cm.

2. Nā ʻenehana hana holomuaʻ

· Heteroepitaxy: SiC-on-Si (kūlike me nā laina silicon 8-'īniha) a me SiC-on-Diamond (conductivity thermal >2,000 W/m·K).

· Hoʻēmi i ke kīnā: ʻO ka hydrogen etching a me ka annealing e hōʻemi i nā hemahema micropipe/density, e hoʻomaikaʻi ana i ka hua wafer i >95%.

3. Nā ʻōnaehana hoʻokele maikaʻiʻ

· Hoʻāʻo Hoʻopau-a-Hopena: Raman spectroscopy (hōʻoia polytype), XRD (crystallinity), a me SEM (ka nānā ʻana i nā hemahema).

· Nā Palapala Hōʻoia: Kūlike me AEC-Q101 (kaʻa), JEDEC (JEDEC-033), a me MIL-PRF-38534 (pae koa).

4. Kākoʻo Kaulahao Hoʻolako Honuaʻ

· Ka Mana Hana: Ka hana mahina >10,000 wafers (60% 8-'īniha), me ka hoʻouna ʻana i loko o 48 hola no ka pilikia.

· Pūnaewele Logistics: Uhi ʻia ma ʻEulopa, ʻAmelika ʻĀkau, a me Asia-Pākīpika ma o ka ukana ea/kai me nā ʻōpala i kāohi ʻia e ka mahana.

5. Hoʻomohala Pū ʻana o ka ʻenehanaʻ

· Nā Keʻena Hoʻokolohua R&D Hui Pū: E hana pū ma ka hoʻonui ʻana i ka hoʻopili ʻana o ka modula mana SiC (e laʻa, ka hoʻohui ʻana o ka substrate DBC).

· Laikini IP: Hāʻawi i ka laikini ʻenehana ulu epitaxial GaN-on-SiC RF e hōʻemi i nā kumukūʻai R&D o ka mea kūʻai aku.

Hōʻuluʻulu manaʻo

ʻO nā substrates kristal hua SiC (silicon carbide), ma ke ʻano he mea hoʻolālā, ke hoʻololi hou nei i nā kaulahao ʻoihana honua ma o nā holomua i ka ulu ʻana o ke kristal, ka kaohi ʻana i nā hemahema, a me ka hoʻohui heterogeneous. Ma ka hoʻomau ʻana i ka hoʻonui ʻana i ka hōʻemi ʻana o ka hemahema wafer, ka hoʻonui ʻana i ka hana 8-ʻīniha, a me ka hoʻonui ʻana i nā kahua heteroepitaxial (e laʻa, SiC-on-Diamond), hāʻawi ʻo XKH i nā hopena hilinaʻi kiʻekiʻe, kūpono no ka optoelectronics, ka ikehu hou, a me ka hana holomua. ʻO kā mākou kūpaʻa i ka hana hou e hōʻoiaʻiʻo ana i nā mea kūʻai aku e alakaʻi i ka neutrality carbon a me nā ʻōnaehana akamai, e hoʻokele ana i ka au hou o nā ʻōnaehana semiconductor wide-bandgap.