Papa Epitaxial
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200mm 8'īniha GaN ma ka substrate wafer Epi-layer sapphire
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ʻO ka Substrate Heterogeneous Hana Kiʻekiʻe no nā Mea Acoustic RF (LNOSiC)
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ʻO GaN ma ke aniani 4-'īniha: Nā koho aniani hiki ke hoʻopilikino ʻia me JGS1, JGS2, BF33, a me ka Quartz maʻamau
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ʻO AlN-on-NPSS Wafer: Papa Nitride Aluminum Hana Kiʻekiʻe ma ka Substrate Sapphire ʻAʻole i Polished no nā noi mahana kiʻekiʻe, mana kiʻekiʻe, a me RF
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Nā Wafers Epitaxial GaN-on-SiC i hoʻopilikino ʻia (100mm, 150mm) - Nā Koho Substrate SiC he nui (4H-N, HPSI, 4H/6H-P)
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ʻO GaN-on-Diamond Wafers 4'īniha 6'īniha Ka mānoanoa epi holoʻokoʻa (micron) 0.6 ~ 2.5 a i ʻole i hoʻopilikino ʻia no nā noi alapine kiʻekiʻe
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ʻO GaAs mana kiʻekiʻe epitaxial wafer substrate gallium arsenide wafer mana laser wavelength 905nm no ka mālama lapaʻau laser
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Hiki ke hoʻohana ʻia nā ʻāpana photodetector PD Array epitaxial wafer substrate InGaAs no LiDAR
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2'īniha 3'īniha 4'īniha InP epitaxial wafer substrate APD mea ʻike kukui no nā kamaʻilio fiber optic a i ʻole LiDAR
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ʻAe ʻia ka ʻano N/P 6inch SiC Epitaxiy
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ʻO ka wafer SiC Epi 4'īniha no MOS a i'ole SBD
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ʻEkolu papa o ka Silicon-On-Insulator Substrate SOI wafer no Microelectronics a me Radio Frequency