200mm 8 iniha GaN ma ka sapphire Epi-layer wafer substrate
Hoʻolauna huahana
ʻO ka 8-inihi GaN-on-Sapphire substrate he mea semiconductor kiʻekiʻe i haku ʻia me kahi papa Gallium Nitride (GaN) i ulu ʻaʻole kahi substrate Sapphire.Hāʻawi kēia mea waiwai i nā waiwai lawe uila maikaʻi loa a kūpono no ka hana ʻana i nā mea hana semiconductor kiʻekiʻe a me nā kiʻekiʻe.
Hana Hana
ʻO ke kaʻina hana e pili ana i ka ulu epitaxial o kahi papa GaN ma kahi substrate Sapphire me ka hoʻohana ʻana i nā ʻenehana holomua e like me ka metal-organic chemical vapor deposition (MOCVD) a i ʻole molecular beam epitaxy (MBE).Lawe ʻia ka deposition ma lalo o nā kūlana i hoʻopaʻa ʻia e hōʻoia i ka maikaʻi o ka kristal kiʻekiʻe a me ke kūlike kiʻiʻoniʻoni.
Nā noi
Loaʻa ka 8-inch GaN-on-Sapphire substrate i nā noi nui ma nā ʻano like ʻole me nā kamaʻilio microwave, radarsystems, ʻenehana uila, a me optoelectronics.ʻO kekahi o nā noi maʻamau:
1. Nā mea hoʻonui mana RF
2. ʻOihana kukui LED
3. Nā mea hana kamaʻilio pūnaewele ʻole
4. Nā mea uila no nā wahi wela kiʻekiʻe
5. Onā mea ptoelectronic
Nā Kūlana Huahana
-Nānā: ʻO ka nui o ka substrate he 8 iniha (200 mm) ke anawaena.
- Kūleʻa Kūleʻa: Hoʻomaʻamaʻa ʻia ka ʻili i kahi kiʻekiʻe o ka maʻalahi a hōʻike i ka maikaʻi e like me ke aniani.
- Mānoanoa: Hiki ke hoʻopilikino ʻia ka mānoanoa ʻo GaN ma muli o nā koi kikoʻī.
- Packaging: Hoʻopili maikaʻi ʻia ka substrate i nā mea anti-static e pale ai i ka pōʻino i ka wā e hele ai.
- Orientation Flat: Loaʻa i ka substrate kahi kikoʻī kikoʻī e kōkua i ka alignment wafer a me ka lawelawe ʻana i nā kaʻina hana hana.
- Nā ʻāpana ʻē aʻe: Hiki ke hoʻohālikelike ʻia nā kikoʻī o ka mānoanoa, resistivity, a me dopant e like me nā koi o ka mea kūʻai aku.
Me kāna mau waiwai waiwai a me nā noi maʻamau, ʻo ka 8-inch GaN-on-Sapphire substrate kahi koho hilinaʻi no ka hoʻomohala ʻana i nā mea hana semiconductor kiʻekiʻe i nā ʻoihana like ʻole.
Ma waho aʻe o GaN-On-Sapphire, hiki iā mākou ke hāʻawi aku i ke kahua o nā noi mīkini mana, ʻo ka ʻohana huahana e komo pū me 8-inch AlGaN/GaN-on-Si epitaxial wafers a me 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers.I ka manawa like, ua hoʻomohala mākou i ka hoʻohana ʻana i kāna ʻenehana epitaxy 8-inch GaN epitaxy kiʻekiʻe i ka māla microwave, a hoʻomohala i kahi 8-inch AlGaN / GAN-on-HR Si epitaxy wafer e hoʻohui i ka hana kiʻekiʻe me ka nui, haʻahaʻa kumu kūʻai. a kūpono hoʻi me ka hana maʻamau 8-inihi.Ma waho aʻe o ka gallium nitride, loaʻa iā mākou kahi laina huahana o AlGaN/GaN-on-SiC epitaxial wafers e hoʻokō i nā pono o nā mea kūʻai aku no nā mea epitaxial gallium nitride.
Kiʻi kikoʻī
