100mm 4 iniha GaN ma Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

(1) Hoʻomaʻamaʻa mua ʻia ka sapphire substrate i ka 1050 ℃ i loko o ka lewa hydrogen, ʻo ke kumu e hoʻomaʻemaʻe i ka ʻili substrate;

(2) Ke hāʻule ka mahana o ka substrate i 510 ℃, waiho ʻia kahi haʻahaʻa haʻahaʻa GaN / AlN buffer layer me ka mānoanoa o 30nm ma ka ʻili o ka substrate sapphire;

(3) Piʻi ka mahana i 10 ℃, ua hoʻokomo ʻia ke kinoea kinoea amonia, trimethylgallium a me silane, e hoʻomalu i ka kahe kahe e pili ana, a ua ulu ka silicon-doped N-type GaN o 4um mānoanoa;

(4) Ua hoʻohana ʻia ke kinoea hopena o ka alumini trimethyl a me ka trimethyl gallium no ka hoʻomākaukau ʻana i nā ʻāina N-type A⒑ silicon-doped me ka mānoanoa o 0.15um;

(5) Ua hoʻomākaukau ʻia ʻo 50nm Zn-doped InGaN ma ka injecting trimethylgallium, trimethylindium, diethylzinc a me ka amonia ma kahi mahana o 8O0 ℃ a me ka hoʻomalu ʻana i nā kahe kahe like ʻole;

(6) Ua hoʻonuiʻia ka mahana i 1020 ℃, trimethylaluminum, trimethylgallium a me bis (cyclopentadienyl) magnesium i hoʻokomoʻia e hoʻomākaukau i ka 0.15um Mg doped P-type AlGaN a me ka 0.5um Mg doped P-type G blood glucose;

(7) Loaʻa ke kiʻi ʻoniʻoni P-type GaN Sibuyan kiʻekiʻe ma o ka hoʻopili ʻana i ka lewa nitrogen ma 700 ℃;

(8) E kau ana ma ka ili stasis P-type G no ka hoike ana i ka ili stasis N-type G;

(9) Ka hoʻoheheʻe ʻana o nā papa hoʻopili Ni / Au ma ka ʻili p-GaNI, ka hoʻoheheʻe ʻana o nā papa pili △ / Al ma ka ʻili ll-GaN e hana i nā electrodes.