ʻO HPSI SiC Wafer ≥90% Transmittance Optical Grade no nā aniani AI/AR

ʻO ka wehewehe pōkole:

ʻĀpana	Papa	4-Inch substrate	6-ʻīniha Lapaʻa
Anawaena	Papa Z / Papa D	99.5 mm – 100.0 mm	149.5 mm – 150.0 mm
ʻO ke ʻano poli	Papa Z / Papa D	4H	4H
mānoanoa	Z Papa	500 μm ± 15 μm	500 μm ± 15 μm
mānoanoa	Papa D	500 μm ± 25 μm	500 μm ± 25 μm
ʻO ka Wafer Orientation	Papa Z / Papa D	Ma ke axis: <0001> ± 0.5°	Ma ke axis: <0001> ± 0.5°
Micropipe Density	Z Papa	≤ 1 knm²	≤ 1 knm²
Micropipe Density	Papa D	≤ 15 knm²	≤ 15 knm²
Kūʻē	Z Papa	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Kūʻē	Papa D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Introduction Core: ʻO ke kuleana o nā HPSI SiC Wafers i nā aniani AI/AR

ʻO HPSI (High-Purity Semi-Insulating) Silicon Carbide wafers he mau wafers kūikawā i hōʻike ʻia e ka resistivity kiʻekiʻe (>10⁹ Ω·cm) a me ka haʻahaʻa haʻahaʻa haʻahaʻa. I nā aniani AI / AR, lawelawe nui lākou ma ke ʻano he kumu substrate no nā lens waveguide optical diffractive, e kamaʻilio ana i nā bottlenecks e pili ana me nā mea optical kuʻuna e pili ana i nā ʻano mea lahilahi a me ka māmā, ka wela wela, a me ka hana optical. No ka laʻana, hiki i nā aniani AR e hoʻohana ana i nā lens waveguide SiC ke loaʻa i kahi ākea ākea ākea (FOV) o 70°–80°, ʻoiai e hōʻemi ana i ka mānoanoa o kahi papa lens hoʻokahi i 0.55mm wale nō a me ke kaumaha i 2.7g wale nō, e hoʻomaikaʻi nui ana i ka hoʻohana ʻana i ka hōʻoluʻolu a me ka ʻike ʻana.

b0968b8d-1b0f-4dfe-8fce-865d38404ba5_副本_副本

Nā ʻano nui: Pehea e hoʻoikaika ai ʻo SiC Material i ka AI/AR Glasses Design

Kiekie Refractive Index a Optical Performance Optimization

Kokoke 50% ki'eki'e o ka hua'ōlelo refractive o SiC (2.6–2.7) ma mua o ke aniani kahiko (1.8–2.0). ʻAe kēia i nā hale alakaʻi nalu ʻoi aku ka lahilahi a ʻoi aku ka maikaʻi, e hoʻonui nui i ka FOV. ʻO ke kiʻekiʻe refractive index pū kekahi e kōkua i ka hoʻopaʻa ʻana i ka "hopena anuenue" maʻamau i nā alakaʻi nalu ʻokoʻa, e hoʻomaikaʻi ana i ka maʻemaʻe kiʻi.

ʻO ka hiki ke hoʻokele wela wela

Me ka hoʻoili wela e like me 490 W/m·K (kokoke i kēlā keleawe), hiki iā SiC ke hoʻopau koke i ka wela i hana ʻia e nā modula hōʻike Micro-LED. Mālama kēia i ka hoʻohaʻahaʻa ʻana i ka hana a i ʻole ka ʻelemakule o ka hāmeʻa ma muli o nā wela kiʻekiʻe, e hōʻoia ana i ka lōʻihi o ke ola pākaukau a me ke kūpaʻa kiʻekiʻe.

Ka ikaika a me ka lōʻihi o ka mīkini

Loaʻa iā SiC kahi paʻakikī Mohs o 9.5 (ʻelua wale nō i ke daimana), hāʻawi i ke kūpaʻa kūʻokoʻa kūʻokoʻa, e kūpono ana ia no nā aniani mea kūʻai aku i hoʻohana pinepine ʻia. Hiki ke hoʻomalu ʻia kona ʻeleʻele i Ra <0.5 nm, e hōʻoia ana i ka haʻahaʻa haʻahaʻa a me ke ʻano like ʻole o ka lawe ʻana i nā kukui i nā alakaʻi nalu.

Hoʻolike Uila

Hiki ke pale aku o HPSI SiC (>10⁹ Ω·cm) i ka pale ʻana i ka hōʻailona. Hiki iā ia ke lawelawe ma ke ʻano he mea hana mana kūpono, e hoʻonui ana i nā modules hoʻokele mana i nā aniani AR.

Nā kuhikuhi noi kumu mua

Nā ʻāpana Optical Core no AI/AR Glasses

Nā Lens Waveguide Diffractive: Hoʻohana ʻia nā substrates SiC e hana i nā alakaʻi nalu optical ultra-thin e kākoʻo ana i ka FOV nui a me ka hoʻopau ʻana i ka hopena anuenue.
Nā Papa Window a me nā Prisms: Ma o ka ʻokiʻoki ʻana a me ka polishing i hana ʻia, hiki ke hana ʻia ʻo SiC i nā puka makani pale a i ʻole nā prisms optical no nā aniani AR, e hoʻomaikaʻi ana i ka transmittance māmā a me ke kūpaʻa ʻana.

Nā noi i hoʻonui ʻia ma nā kahua ʻē aʻe

Power Electronics: Hoʻohana ʻia i nā hiʻohiʻona kiʻekiʻe, mana kiʻekiʻe e like me nā mea hoʻohuli kaʻa ikehu hou a me nā mana kaʻa ʻoihana.
Quantum Optics: Hana ma ke ʻano he pūʻali no nā kikowaena kala, hoʻohana ʻia i nā substrates no ka kamaʻilio quantum a me nā mea ʻike.

4 Iniha & 6 ʻīniha HPSI SiC Substrate Hoʻohālikelike Hoʻohālikelike

ʻĀpana	Papa	4-Inch substrate	6-ʻīniha Lapaʻa
Anawaena	Papa Z / Papa D	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
ʻO ke ʻano poli	Papa Z / Papa D	4H	4H
mānoanoa	Z Papa	500 μm ± 15 μm	500 μm ± 15 μm
mānoanoa	Papa D	500 μm ± 25 μm	500 μm ± 25 μm
ʻO ka Wafer Orientation	Papa Z / Papa D	Ma ke axis: <0001> ± 0.5°	Ma ke axis: <0001> ± 0.5°
Micropipe Density	Z Papa	≤ 1 knm²	≤ 1 knm²
Micropipe Density	Papa D	≤ 15 knm²	≤ 15 knm²
Kūʻē	Z Papa	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Kūʻē	Papa D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
ʻO ka hoʻonohonoho papa mua	Papa Z / Papa D	(10-10) ± 5.0°	(10-10) ± 5.0°
ʻO ka lōʻihi pālahalaha mua	Papa Z / Papa D	32.5 mm ± 2.0 mm	Notch
ʻO ka lōʻihi pālahalaha lua	Papa Z / Papa D	18.0 mm ± 2.0 mm	-
Hoʻokuʻu ʻia ʻo Edge	Papa Z / Papa D	3 mm	3 mm
LTV / TTV / Bow / Warp	Z Papa	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
LTV / TTV / Bow / Warp	Papa D	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
ʻO ke koʻikoʻi	Z Papa	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
ʻO ke koʻikoʻi	Papa D	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Nā māwae maka	Papa D	ʻĀpana hui ≤ 0.1%	ʻO ka lōʻihi hui ≤ 20 mm, hoʻokahi ≤ 2 mm
Nā ʻāpana polytype	Papa D	ʻĀpana hui ≤ 0.3%	ʻĀpana hui ≤ 3%
Hoʻokomo ʻia ʻo Carbon Visual	Z Papa	ʻĀpana hui ≤ 0.05%	ʻĀpana hui ≤ 0.05%
Hoʻokomo ʻia ʻo Carbon Visual	Papa D	ʻĀpana hui ≤ 0.3%	ʻĀpana hui ≤ 3%
ʻO nā ʻili Silika	Papa D	5 ʻae ʻia, kēlā me kēia ≤1mm	Ka lōʻihi hui ≤ 1 x anawaena
ʻEke Chips	Z Papa	ʻAʻole ʻae ʻia (ka laulā a me ka hohonu ≥0.2mm)	ʻAʻole ʻae ʻia (ka laulā a me ka hohonu ≥0.2mm)
ʻEke Chips	Papa D	7 ʻae ʻia, kēlā me kēia ≤1mm	7 ʻae ʻia, kēlā me kēia ≤1mm
ʻO ka hoʻokaʻawale ʻana o ka wiliwili	Z Papa	-	≤ 500 knm²
Hoʻopili ʻana	Papa Z / Papa D	ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi	ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

Nā lawelawe XKH: Hoʻohui ʻia a me nā hiki ke hoʻonohonoho pono

Loaʻa i ka hui XKH nā mana hoʻohui kū pololei mai nā mea maka a hiki i nā wafers i hoʻopau ʻia, e uhi ana i ke kaulahao holoʻokoʻa o ka ulu ʻana o ka substrate SiC, ʻokiʻoki, polishing, a me ka hana maʻamau. Loaʻa nā pōmaikaʻi lawelawe nui:

Nā mea like ʻole:Hiki iā mākou ke hāʻawi i nā ʻano wafer like ʻole e like me ke ʻano 4H-N, ʻano 4H-HPSI, ʻano 4H/6H-P, a me ke ʻano 3C-N. Hiki ke hoʻololi i ka resistivity, ka mānoanoa, a me ka orientation e like me nā koi.
ʻHoʻopilikino nui ʻoluʻolu:Kākoʻo mākou i ka hana wafer mai ka 2-ʻīniha a hiki i ka 12-ʻīniha anawaena, a hiki ke hana i nā hale kūikawā e like me nā ʻāpana huinaha (e laʻa, 5x5mm, 10x10mm) a me nā prisms ʻole.
ʻO ka mana pololei o ka papa Optical:Hiki ke mālama ʻia ka Wafer Total Thickness Variation (TTV) ma <1μm, a me ka roughness o ka ʻili ma Ra <0.3 nm, e hoʻokō ana i nā koi palahalaha nano-level no nā mea alakaʻi nalu.
Pane Makeke wikiwiki:ʻO ka hoʻohālike pāʻoihana i hoʻohui ʻia e hōʻoia i ka hoʻololi maikaʻi ʻana mai ka R&D i ka hana nui, e kākoʻo ana i nā mea āpau mai ka hōʻoia liʻiliʻi a hiki i nā hoʻouna nui (ʻo ka manawa alakaʻi maʻamau 15-40 mau lā).

FAQ o HPSI SiC Wafer

Nīnau 1: No ke aha i manaʻo ʻia ai ʻo HPSI SiC he mea kūpono no nā lens waveguide AR?
A1: ʻO kāna helu kuhikuhi kiʻekiʻe (2.6–2.7) hiki iā ia ke ʻoi aku ka lahilahi a me ka ʻoi aku ka maikaʻi o nā hale alakaʻi nalu e kākoʻo ana i kahi ākea nui o ka nānā (e laʻa, 70°–80°) ʻoiai e hoʻopau ana i ka "hopena anuenue".
Q2: Pehea e hoʻomaikaʻi ai ʻo HPSI SiC i ka hoʻokele wela ma nā aniani AI/AR?
A2: Me ka thermal conductivity a hiki i 490 W / m · K (kokoke i ke keleawe), hoʻopau maikaʻi ia i ka wela mai nā mea like me Micro-LED, e hōʻoiaʻiʻo ana i ka hana paʻa a me ka lōʻihi o ke ola o ka mīkini.
Q3: He aha nā pōmaikaʻi paʻa i hāʻawi ʻia e HPSI SiC no nā aniani hiki ke hoʻohana ʻia?
A3: Hāʻawi kona ʻano paʻakikī (Mohs 9.5) i ke kūʻē ʻana i ka ʻōpala ʻoi aku ka maikaʻi no ka hoʻohana ʻana i kēlā me kēia lā i nā aniani AR.