Nā Wafers LiNbO₃ 2 ʻīniha-8 ʻīniha mānoanoa 0.1 ~ 0.5mm TTV 3µm Maʻamau

Nā Wafers LiNbO₃ 2 ʻīniha-8 ʻīniha Mānoanoa 0.1 ~ 0.5mm TTV 3µm Kiʻi Hoʻohālike Kūʻē

ʻO ka wehewehe pōkole:

Hōʻike nā Wafers LiNbO₃ i ke kūlana gula i loko o nā photonics i hoʻohui ʻia a me nā acoustics pololei, e hāʻawi ana i ka hana like ʻole i nā ʻōnaehana optoelectronic hou. Ma ke ʻano he mea hana koʻikoʻi, ua hoʻomaʻamaʻa mākou i ke akamai o ka hana ʻana i kēia mau substrates i hana ʻia ma o nā ʻenehana equilibration equilibration o ka mokuahi, e loaʻa ana i ka maikaʻi crystalline alakaʻi i ka ʻoihana me nā dens defect ma lalo o 50/cm².

Hiki i nā mana hana XKH ke anawaena mai ka 75mm a i ka 150mm, me ka mana hoʻonohonoho pololei (X/Y/Z-cut ±0.3°) a me nā koho doping kūikawā me nā mea ʻike honua. ʻO ka hui kūʻokoʻa o nā waiwai i loko o LiNbO₃ Wafers - me kā lākou r₃₃ coefficient kupaianaha (32±2 pm/V) a me ka ākea ākea mai kahi kokoke-UV a i waena-IR - he mea nui ia no nā kaʻa kiʻi kiʻi kiʻekiʻe a me nā hāmeʻa acoustic kiʻekiʻe.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Nā palena ʻenehana

Mea waiwai	ʻO nā wafe ʻo Optical Grade LiNbO3
Curie Temp	1142±2.0 ℃
ʻOki ʻokiʻoki	X/Y/Z etc
Anawaena/nui	2"/3"/4"/6"/8"
Tol(±)	<0.20 mm
mānoanoa	0.1 ~ 0.5mm a oi
Papa Papahana	16mm/22mm /32mm
TTV	<3µm
Kakaka	-30
Warp	<40µm
Papa kuhikuhi	Loaʻa nā mea a pau
ʻAno ʻili	Hoʻomaʻamaʻa ʻia ka ʻaoʻao hoʻokahi / ʻaoʻao pālua
ʻaoʻao poli Ra	<0.5nm
S/D	20/10
Paʻa Paʻa	R=0.2mm a i ʻole Bullnose
Optical doped	Fe/Zn/MgO a pela aku no ka LN< wafer
Nā Koina Ili Wafer	Hōʻike hōʻike	ʻAʻole=2.2878/Ne=2.2033 @632nm lōʻihi nalu
	hoʻohaumia,	ʻAʻohe
	Nā ʻāpana ￠>0.3 µ m	<= 30
	ʻAkaʻi , ʻokiʻoki	ʻAʻohe
	ʻO ke kīnā	ʻAʻohe māwae lihi, ʻōpala, ʻike maka, ʻili
Hoʻopili ʻia	Ka nui/Wafer pahu	25pcs no ka pahu

Nā ʻano kumu o kā mākou LiNbO₃ Wafers

1. Nā ʻano hana kiʻi kiʻi

ʻO kā mākou LiNbO₃ Wafers e hōʻike ana i nā mea hiki ke hoʻopili i nā mea māmā, me nā coefficients optical nonlinear i hiki i 42 pm/V - hiki ke hoʻololi i nā kaʻina hoʻololi hawewe lōʻihi koʻikoʻi no nā photonics quantum. Mālama nā substrates> 72% ka hoʻouna ʻana ma waena o 320-5200nm, me nā mana ʻenehana kūikawā e loaʻa ana <0.2dB/cm ka nalowale o ka hoʻolaha ʻana ma nā hawewe telecom.

2. Acoustic Wave Engineering

Kākoʻo ke ʻano crystalline o kā mākou LiNbO₃ Wafers i ka wikiwiki o ka nalu ma mua o 3800 m/s, e ʻae ana i ka hana resonator a hiki i 12GHz. Hāʻawi kā mākou ʻenehana polishing proprietary i nā mea hana hawewe acoustic surface (SAW) me nā poho hoʻokomo ma lalo o 1.2dB, ʻoiai e mālama ana i ka paʻa o ka mahana ma loko o ± 15ppm/°C.

3.Environmental Resilience

Hoʻolālā ʻia e kū i nā kūlana koʻikoʻi, mālama kā mākou LiNbO₃ Wafers i ka hana mai nā mahana cryogenic a hiki i 500 ° C kaiapuni hana. Hōʻike ka mea i ka paʻakikī o ka pāhawewe ʻokoʻa, me ke kū ʻana o >1Mrad ka nui ionizing dose me ka ʻole o ka hoʻohaʻahaʻa hana.

4.Application-Specific Configurations

Hāʻawi mākou i nā ʻano like ʻole domain-engineered me:
ʻO nā hale poled i kēlā me kēia manawa me nā manawa kikowaena 5-50μm
ʻO nā kiʻi ʻoniʻoni ʻoniʻoni ʻoniʻoni ʻoniʻoni no ka hoʻohui hybrid
Nā mana i hoʻonui ʻia metamaterial no nā noi kūikawā

Nā Kūlana Hoʻokō no nā Wafers LiNbO₃

1.Next-Gen Optical Networks
LiNbO₃ ʻO nā Wafers ka iwi kuamoʻo no nā transceivers optical scale-terabit, hiki i ka 800Gbps ka hoʻouna ʻana ma o nā hoʻolālā modulator nested holomua. Hoʻohana nui ʻia kā mākou substrate no ka hoʻokō ʻana i nā optics co-packaged i nā ʻōnaehana accelerator AI/ML.
2.6G RF Nā Kūlana
Kākoʻo ka hanauna hou loa o LiNbO₃ Wafers i ka kānana ultra-wideband a hiki i 20GHz, e hoʻoponopono ana i nā pono spectrum o nā kūlana 6G e kū nei. Hāʻawi kā mākou mau mea i nā hale kiʻi resonator acoustic hou me nā mea Q ma mua o 2000.
3. Quantum Information Systems
Hoʻokumu ʻia nā Wafers LiNbO₃ i hoʻopaʻa pono ʻia i ke kumu no nā kumu kiʻi paʻi i hoʻopaʻa ʻia me ka ʻoi aku ka maikaʻi o ka hoʻokumu ʻana o ka ʻelua. Hāʻawi kā mākou mau substrate i nā holomua i ka photonic quantum computing a me nā pūnaewele kamaʻilio paʻa.
4. Nā mea hoʻonā ʻike kiʻekiʻe
Mai ka LiDAR kaʻa e hana ana ma 1550nm a hiki i nā mea ʻike gravimetric ultra-sensitive, hāʻawi nā Wafers LiNbO₃ i ka paepae transduction koʻikoʻi. Hiki i kā mākou mau mea hana ke hoʻonā i ka sensor a hiki i ka pae ʻike mole hoʻokahi.

Nā Pōmaikaʻi Nui o nā Wafers LiNbO₃

1. Hana ʻole Electro-Optic
ʻO ke Kiʻekiʻe Electro-Optic Coefficient (r₃₃~30-32 pm/V): Hōʻike i ka pae ʻoihana no nā wafers lithium niobate pāʻoihana, hiki i ka 200Gbps + kiʻekiʻe kiʻekiʻe o ka optical modulators i ʻoi aku ma mua o nā palena o ka hana o nā hoʻonā silicon a polymer.

Hoʻokomo ʻia ʻo Ultra-Low Insertion Loss (<0.1 dB/cm): Loaʻa ʻia ma o ka nanoscale polishing (Ra<0.3 nm) a me nā pale anti-reflection (AR), e hoʻonui nui i ka ikehu o nā modules kamaʻilio optical.

2. ʻOi aku ka Piezoelectric & Acoustic Properties
He kūpono no nā ʻenehana SAW/BAW kiʻekiʻe: Me nā velocities acoustic o 3500-3800 m/s, kākoʻo kēia mau wafers i nā hoʻolālā kānana 6G mmWave (24-100 GHz) e hōʻike ana i nā poho hoʻokomo <1.0 dB.

Kiʻekiʻe Electromechanical Coupling Coefficient (K²~0.25%): Hoʻonui i ka bandwidth a me ke koho hōʻailona i nā ʻāpana mua o ka RF, e kūpono iā lākou no nā kahua kahua 5G/6G a me nā kamaʻilio satellite.

3. Mākaʻikaʻi Broadband & Nā hopena Optical Nonlinear
ʻO ka puka aniani hoʻoili ʻana o ka ultra-Wide Optical (350-5000 nm): Uhi ʻia ka UV a i ke kiko waena-IR, hiki i nā noi e like me:

Quantum Optics: Loaʻa ka hoʻonohonoho ʻana o ka poled i kēlā me kēia manawa (PPLN) ma kahi o 90% ka maikaʻi o ka hana paʻa kiʻi paʻi.

Nā Pūnaehana Laser: Hāʻawi ka Optical parametric oscillation (OPO) i ka puka hawewe lōʻihi (1-10 μm).

ʻO ka paepae hōʻino ʻino Laser ʻokoʻa (>1 GW/cm²): Hoʻokō i nā koi koʻikoʻi no nā noi laser mana kiʻekiʻe.

4. Paʻa Kaiapuni Loa
Kū'ē Kūlana Kiʻekiʻe (Curie point: 1140°C): Mālama i ka hana paʻa ma waena o -200°C a +500°C, kūpono no:

ʻElekiko Kaʻa

Moku lewa

Paʻa Paʻa Radiation (>1 Mrad TID): Kūlike me nā kūlana MIL-STD-883, kūpono no ka nuklea a me ka uila pale.

5. Hoʻoponopono a me ka hoʻohui ʻana i ka hiki ke hoʻololi
ʻO ka hoʻonohonoho kristal a me ka hoʻoponopono doping:

X/Y/Z-oki ʻoki ʻia (±0.3° pololei)

MgO doping (5 mol%) no ka hoʻoikaika ʻana i ke kūʻē ʻana i ka pōʻino

Kākoʻo Hoʻohui Heterogeneous:

He kūpono me ka kiʻiʻoniʻoni lahilahi LiNbO₃-on-Insulator (LNOI) no ka hoʻohui pū ʻana me nā kiʻi kiʻi silika (SiPh)

Hiki ke hoʻopaʻa ʻia i ka wafer-level no nā optics co-packaged (CPO)

6. Scalable Production & Cost Efficiency
6-ʻīniha (150mm) Wafer Mass Production: Hoʻemi i nā kumukūʻai ʻāpana e 30% i hoʻohālikelike ʻia me nā kaʻina hana 4-inihi kuʻuna.

Hoʻouna wikiwiki: Hoʻouna nā huahana maʻamau i nā wiki 3; ʻO nā prototypes liʻiliʻi liʻiliʻi (ka liʻiliʻi 5 wafers) hāʻawi i nā lā 10.