LiTaO3 Wafer 2'īniha-8'īniha 10x10x0.5 mm 1sp 2sp no nā kamaʻilio 5G/6G
Nā palena loea
| Inoa | LiTaO3 papa ʻōlinolino | Pae papa leo LiTaO3 |
| Axial | ʻOki Z + / - 0.2 ° | ʻOki 36 ° Y / ʻoki 42 ° Y / ʻoki X (+ / - 0.2°) |
| Anawaena | 76.2mm + / - 0.3mm/ 100±0.2mm | 76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm |
| Papahele Datum | 22mm + / - 2mm | 22mm + /-2mm 32mm + /-2mm |
| Mānoanoa | 500um + /-5mm 1000um + /-5mm | 500um + /-20mm 350um + /-20mm |
| TTV | ≤ 10um | ≤ 10um |
| Mahana Curie | 605 °C + / - 0.7 °C (ʻano DTA) | 605 °C + / -3 °C (ʻano DTA |
| ʻAno o ka ʻili | Hoʻopili ʻia ʻaoʻao pālua | Hoʻopili ʻia ʻaoʻao pālua |
| Nā kihi i hoʻokaʻawale ʻia | ka hoʻopuni ʻana o ka lihi | ka hoʻopuni ʻana o ka lihi |
Nā ʻano koʻikoʻi
1. Hana Uila a me Optical
· Electro-Optic Coefficient: hiki ʻo r33 i 30 pm/V (X-cut), 1.5× kiʻekiʻe ma mua o LiNbO3, e hiki ai i ka ultra-wideband electro-optic modulation (>40 GHz bandwidth).
· Pane ʻIkepili Laulā: Ka laulā hoʻoili 0.4–5.0 μm (mānoanoa 8 mm), me ka lihi omo ultraviolet e like me 280 nm, kūpono no nā lasers UV a me nā mea hana quantum dot.
· Ka helu Pyroelectric haʻahaʻa: dP/dT = 3.5×10⁻⁴ C/(m²·K), e hōʻoiaʻiʻo ana i ke kūpaʻa i nā mea ʻike infrared wela kiʻekiʻe.
2. Nā Waiwai Wela a me nā Waiwai Mekanika
· Ka Hoʻokele Wela Kiʻekiʻe: 4.6 W/m·K (ʻoki-X), ʻehā manawa o ka quartz, e hoʻomau ana i ka hoʻopōʻaiapuni wela -200–500°C.
· Ka helu hoʻonui wela haʻahaʻa: CTE = 4.1 × 10⁻⁶ / K (25–1000 ° C), kūpono me ka ʻōpala silicon e hōʻemi i ke kaumaha wela.
3. Ka Mana ʻana i nā Kikoʻī a me ka Hoʻoponopono Kūpono
· Ka nui o ka Micropipe: <0.1 cm⁻² (nā wafers 8-'īniha), ka nui o ka dislocation <500 cm⁻² (i hōʻoia ʻia ma o ke kālai ʻana o KOH).
· ʻAno o ka ʻIli: CMP-polished i Ra <0.5 nm, e hoʻokō ana i nā koi pālahalaha EUV lithography-grade.
Nā Noi Koʻikoʻi
| Kahua ʻĀina | Nā hiʻohiʻona noi | Nā Pōmaikaʻi ʻenehana |
| Nā Kamaʻilio Optical | Nā lasers 100G/400G DWDM, nā modula hybrid silicon photonics | ʻO ka hoʻoili spectral ākea o ka wafer LiTaO3 a me ka pohō waveguide haʻahaʻa (α <0.1 dB/cm) e hiki ai ke hoʻonui i ka C-band. |
| 5G/6G Kamaʻilio | Nā kānana SAW (1.8–3.5 GHz), nā kānana BAW-SMR | Hoʻokō nā wafers ʻoki 42°Y i ka Kt² >15%, e hāʻawi ana i ka pohō hoʻokomo haʻahaʻa (<1.5 dB) a me ka ʻōwili kiʻekiʻe (>30 dB). |
| Nā ʻenehana Quantum | Nā mea ʻike photon hoʻokahi, nā kumu hoʻololi iho parametric | ʻO ke koina nonlinear kiʻekiʻe (χ(2)=40 pm/V) a me ka helu helu pouli haʻahaʻa (<100 helu/s) e hoʻoikaika i ka quantum fidelity. |
| Ka ʻIke ʻOihana | Nā mea ʻike kaomi wela kiʻekiʻe, nā mea hoʻololi o kēia au | ʻO ka pane piezoelectric o ka wafer LiTaO3 (g33 >20 mV/m) a me ke ahonui i ka mahana kiʻekiʻe (>400°C) e kūpono i nā wahi koʻikoʻi loa. |
Nā lawelawe XKH
1. Hana ʻana i ka Wafer maʻamau
· Ka nui a me ka ʻoki ʻana: nā wafers 2–8-'īniha me ka ʻoki X/Y/Z, ʻoki 42°Y, a me nā ʻoki angular maʻamau (±0.01° tolerance).
· Ka Mana Hoʻohuihui: Hoʻohuihui ʻana o Fe, Mg ma o ke ʻano Czochralski (pae hoʻohuihui 10¹⁶–10¹⁹ cm⁻³) e hoʻomaikaʻi i nā coefficients electro-optic a me ke kūpaʻa wela.
2. Nā ʻenehana hana holomua
ʻ
· Periodic Poling (PPLT): ʻenehana Smart-Cut no nā wafers LTOI, e hoʻokō ana i ka pololei o ka manawa kikowaena ±10 nm a me ka hoʻololi pinepine quasi-phase-matched (QPM).
· Hoʻohuihui Heterogeneous: Nā wafers composite LiTaO3 (POI) i hoʻokumu ʻia ma Si me ka mana mānoanoa (300–600 nm) a me ka conductivity thermal a hiki i 8.78 W/m·K no nā kānana SAW alapine kiʻekiʻe.
3. Nā ʻōnaehana hoʻokele maikaʻi
ʻ
· Hoʻāʻo Hoʻopau-a-Hopena: Raman spectroscopy (hōʻoia polytype), XRD (crystallinity), AFM (ʻano o ka ʻili), a me ka hoʻāʻo ʻana i ka like ʻana o ka optical (Δn <5 × 10⁻⁵).
4. Kākoʻo Kaulahao Hoʻolako Honua
ʻ
· Ka Mana Hana: Ka hana mahina >5,000 wafers (8-'īniha: 70%), me ka hoʻouna ʻana i loko o 48 hola no ka pilikia.
· Pūnaewele Logistics: Uhi ʻia ma ʻEulopa, ʻAmelika ʻĀkau, a me Asia-Pākīpika ma o ka ukana ea/kai me nā ʻōpala i kāohi ʻia e ka mahana.
