ʻO LT Lithium Tantalate (LiTaO3) Crystal 2'īniha/3'īniha/4'īniha/6'īniha Orientaiton Y-42°/36°/108° Mānoanoa 250-500um

ʻO ke aniani LT Lithium Tantalate (LiTaO3) 2'īniha/3'īniha/4'īniha/6'īniha Orientaiton Y-42°/36°/108° Mānoanoa 250-500um Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

Hōʻike nā wafers LiTaO₃ i kahi ʻōnaehana mea piezoelectric a me ferroelectric koʻikoʻi, e hōʻike ana i nā coefficients piezoelectric kūikawā, ka paʻa wela, a me nā waiwai optical, e lilo ia i mea pono no nā kānana nalu acoustic surface (SAW), nā resonators nalu acoustic bulk (BAW), nā modulators optical, a me nā mea ʻike infrared. He loea ʻo XKH i ka R&D wafer LiTaO₃ kiʻekiʻe a me ka hana ʻana, me ka hoʻohana ʻana i ka ulu ʻana o ke kristal Czochralski (CZ) holomua a me nā kaʻina hana epitaxy pae wai (LPE) e hōʻoia i ka homogeneity crystalline kiʻekiʻe me nā densities kīnā <100/cm².

Hoʻolako ʻo XKH i nā wafers LiTaO₃ 3-'īniha, 4-'īniha, a me 6-'īniha me nā ʻano crystallographic he nui (X-cut, Y-cut, Z-cut), e kākoʻo ana i ka doping i hana ʻia (Mg, Zn) a me nā hana poling e hoʻokō i nā koi noi kikoʻī. ʻO ka dielectric constant o ka mea (ε~40-50), ka piezoelectric coefficient (d₃₃~8-10 pC/N), a me ka mahana Curie (~600°C) e hoʻokumu iā LiTaO₃ ma ke ʻano he substrate makemake ʻia no nā kānana alapine kiʻekiʻe a me nā sensor kikoʻī.

Uhi kā mākou hana hana i hoʻohui ʻia ma ke ʻano kū pololei i ka ulu ʻana o ke kristal, ka wafering, ka polishing, a me ka waiho ʻana o ka ʻili lahilahi, me ka hiki ke hana i kēlā me kēia mahina ma mua o 3,000 wafers e lawelawe i nā kamaʻilio 5G, nā mea uila mea kūʻai aku, nā photonics, a me nā ʻoihana pale. Hāʻawi mākou i ka ʻōlelo aʻoaʻo loea piha, ka wehewehe ʻana i ka laʻana, a me nā lawelawe prototyping haʻahaʻa e hāʻawi i nā hopena LiTaO₃ i hoʻomaikaʻi ʻia.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā palena loea

Inoa	LiTaO3 papa ʻōlinolino	Pae papa leo LiTaO3
Axial	ʻOki Z + / - 0.2 °	ʻOki 36 ° Y / ʻoki 42 ° Y / ʻoki X(+ / - 0.2°)
Anawaena	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Papahele Datum	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Mānoanoa	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Mahana Curie	605 °C + / - 0.7 °C (ʻano DTA)	605 °C + / -3 °C (ʻano DTA
ʻAno o ka ʻili	Hoʻopili ʻia ʻaoʻao pālua	Hoʻopili ʻia ʻaoʻao pālua
Nā kihi i hoʻokaʻawale ʻia	ka hoʻopuni ʻana o ka lihi	ka hoʻopuni ʻana o ka lihi

Nā ʻano koʻikoʻi

1. ʻAno Crystal a me ka hana uila

· Paʻa Crystallographic: 100% 4H-SiC polytype dominance, ʻaʻohe multicrystalline inclusions (e laʻa, 6H/15R), me ka XRD rocking curve piha-laulā ma ka hapalua-kiʻekiʻe (FWHM) ≤32.7 arcsec.
· Ka Neʻe ʻana o ka Mea Lawe Kiʻekiʻe: Ka neʻe ʻana o ka uila he 5,400 cm²/V·s (4H-SiC) a me ka neʻe ʻana o ka lua he 380 cm²/V·s, e hiki ai ke hoʻolālā i nā mea hana alapine kiʻekiʻe.
·Paʻakikī o ka Radiation: Kū i ka hoʻomālamalama neutron 1 MeV me ka paepae hōʻino neʻe o 1 × 10¹⁵ n/cm², kūpono no nā noi aerospace a me nā noi nukelea.

2. Nā Waiwai Wela a me nā Waiwai Mechanical

· Ka Hoʻokele Wela Kūikawā: 4.9 W/cm·K (4H-SiC), ʻekolu ka nui o ka silicon, e kākoʻo ana i ka hana ma luna o 200°C.
· Ka helu hoʻonui wela haʻahaʻa: CTE o 4.0 × 10⁻⁶/K (25–1000°C), e hōʻoiaʻiʻo ana i ka launa pū ʻana me ka ʻōpala i hoʻokumu ʻia i ka silicon a me ka hoʻēmi ʻana i ke kaumaha wela.

3. Ka Mana ʻana i nā hemahema a me ka Hoʻoponopono Kūpono
ʻ
· Ka nui o ka Micropipe: <0.3 cm⁻² (nā wafers 8-'īniha), ka nui o ka dislocation <1,000 cm⁻² (i hōʻoia ʻia ma o ke kālai ʻana o KOH).
· ʻAno o ka ʻIli: CMP-polished iā Ra <0.2 nm, e hoʻokō ana i nā koi pālahalaha EUV lithography-grade.

Nā Noi Koʻikoʻi

Kikowaena	Nā hiʻohiʻona noi	Nā Pōmaikaʻi ʻenehana
Nā Kamaʻilio Optical	Nā lasers 100G/400G, nā modula hybrid silicon photonics	Hoʻokomo nā substrates hua InP i ka bandgap pololei (1.34 eV) a me ka heteroepitaxy e pili ana i Si, e hōʻemi ana i ka nalowale o ka hoʻopili optical.
Nā Kaʻa Ikehu Hou	Nā mea hoʻohuli uila kiʻekiʻe 800V, nā mea hoʻoili uila (OBC)	Hiki i nā substrates 4H-SiC ke kū i ka >1,200 V, e hōʻemi ana i nā pohō conduction ma 50% a me ka nui o ka ʻōnaehana ma 40%.
Nā Kamaʻilio 5G	Nā mea hana RF nalu milimita (PA/LNA), nā mea hoʻonui mana kikowaena kumu	ʻO nā substrates SiC semi-insulating (resistivity >10⁵ Ω·cm) e hiki ai i ka hoʻohui passive alapine kiʻekiʻe (60 GHz+).
Nā Lako Hana ʻOihana	Nā mea ʻike wela kiʻekiʻe, nā mea hoʻololi o kēia au, nā mea nānā reactor nukelea	Hāʻawi nā substrates hua InSb (0.17 eV bandgap) i ka ʻike magnetic a hiki i ka 300%@10 T.

Nā Wafers LiTaO₃ - Nā ʻano koʻikoʻi

1. Hana Piezoelectric Kiʻekiʻe Loa

· ʻO nā coefficients piezoelectric kiʻekiʻe (d₃₃ ~ 8-10 pC/N, K² ~ 0.5%) e hiki ai i nā polokalamu SAW/BAW alapine kiʻekiʻe me ka pohō hoʻokomo <1.5dB no nā kānana RF 5G

· Kākoʻo ka hoʻopili electromechanical maikaʻi loa i nā hoʻolālā kānana bandwidth ākea (≥5%) no nā noi sub-6GHz a me mmWave

2. Nā Waiwai Optical

· Ka ʻike ākea o ka Broadband (>70% hoʻoili ʻana mai 400-5000nm) no nā modulators electro-optic e hoʻokō ana i ka bandwidth >40GHz

· Hoʻoikaika ka ikaika o ka susceptibility optical nonlinear (χ⁽²⁾~30pm/V) i ka hanauna harmonic lua (SHG) i nā ʻōnaehana laser

3. Ke kūpaʻa o ke kaiapuni

· Mālama ka mahana Curie kiʻekiʻe (600°C) i ka pane piezoelectric i nā wahi kaʻa (-40°C a i 150°C)

· ʻO ka inertness kemika e kūʻē i nā waikawa / alkalies (pH1-13) e hōʻoiaʻiʻo i ka hilinaʻi i nā noi sensor ʻoihana

4. Nā hiki ke hoʻopilikino ʻia

· ʻEnekinia kuhikuhi: ʻoki-X (51°), ʻoki-Y (0°), ʻoki-Z (36°) no nā pane piezoelectric i hana kūikawā ʻia

· Nā koho doping: Mg-doped (pale ʻana i ka pōʻino optical), Zn-doped (hoʻonui ʻia ka d₃₃)

· Nā hoʻopau ʻili: Hoʻopili mākaukau ʻia epitaxial (Ra<0.5nm), metallization ITO/Au

Nā Wafers LiTaO₃ - Nā Hoʻohana Mua

1. Nā Modula RF Front-End

· Nā kānana 5G NR SAW (Band n77/n79) me ke koina wela o ke alapine (TCF) <|-15ppm/°C|

· Nā mea hoʻopaʻa BAW ākea loa no WiFi 6E/7 (5.925-7.125GHz)

2. Nā Photonics i hoʻohui ʻia

· Nā modulators Mach-Zehnder wikiwiki (>100Gbps) no nā kamaʻilio optical kūlike

· Nā mea ʻike infrared QWIP me nā nalu ʻokiʻoki i hiki ke hoʻololi ʻia mai 3-14μm

3. Nā ʻElekole Kaʻa

· Nā mea ʻike kaʻa Ultrasonic me ka alapine hana >200kHz

· Ke ola nei nā transducers piezoelectric TPMS mai -40°C a i 125°C kaʻapuni wela

4. Nā ʻōnaehana pale

· Nā kānana mea hoʻokipa EW me ka hōʻole ʻana ma waho o ka band >60dB

· Nā puka makani IR o ka mea ʻimi missile e hoʻouna ana i ka radiation 3-5μm MWIR

5. Nā ʻenehana hou

· Nā mea hoʻololi quantum optomechanical no ka hoʻololi microwave-i-optical

· Nā pūʻulu PMUT no ke kiʻi ʻana i ka ultrasound lapaʻau (hoʻonā>20MHz)

Nā Wafers LiTaO₃ - Nā lawelawe XKH

1. Hoʻokele Kaulahao Hoʻolako

· Ka hana ʻana o Boule-a-wafer me ka manawa alakaʻi 4-pule no nā kikoʻī maʻamau

· Hana hana i hoʻonui ʻia i ke kumukūʻai e hāʻawi ana i ka pono kumukūʻai 10-15% ma mua o nā mea hoʻokūkū

2. Nā Hoʻonā Maʻamau

· Wafering kikoʻī i ke kuhikuhi ʻana: 36°±0.5° Y-ʻoki no ka hana SAW kūpono loa

· Nā haku mele i hoʻohui ʻia: MgO (5mol%) doping no nā noi optical

Nā lawelawe hoʻoheheʻe ʻana: Hoʻolālā ʻana i nā electrode Cr/Au (100/1000Å)

3. Kākoʻo loea

· Ka wehewehe ʻana o nā mea: nā piʻo lūlū XRD (FWHM<0.01°), ka nānā ʻana i ka ʻili AFM

· Hoʻohālikelike hāmeʻa: hoʻohālike FEM no ka hoʻonui ʻana i ka hoʻolālā kānana SAW

Hopena

Ke hoʻomau nei nā wafers LiTaO₃ i ka hoʻoikaika ʻana i nā holomua ʻenehana ma o nā kamaʻilio RF, nā photonics i hoʻohui ʻia, a me nā mea ʻike kaiapuni paʻakikī. ʻO ka ʻike loea o XKH, ka pololei o ka hana ʻana, a me ke kākoʻo ʻenekinia noi e kōkua i nā mea kūʻai aku e lanakila i nā pilikia hoʻolālā i nā ʻōnaehana uila hanauna e hiki mai ana.