p-type 4H/6H-P 3C-N TYPE SIC substrate 4 iniha 〈111〉± 0.5°Zero MPD

ʻO ka wehewehe pōkole:

ʻO ka P-type 4H/6H-P 3C-N type SiC substrate, 4-inihi me ka 〈111〉± 0.5° orientation a me Zero MPD (Micro Pipe Defect), he mea semiconductor hana kiʻekiʻe i hoʻolālā ʻia no ka mea uila uila. hana ʻana. ʻIke ʻia no kāna conductivity thermal maikaʻi loa, ka uila haʻihaʻi kiʻekiʻe, a me ke kūpaʻa ikaika i nā wela kiʻekiʻe a me ka corrosion, kūpono kēia substrate no ka uila uila a me nā noi RF. ʻO ka Zero MPD grade e hōʻoiaʻiʻo i nā hemahema liʻiliʻi, e hōʻoia ana i ka hilinaʻi a me ka paʻa i nā mea hana kiʻekiʻe. ʻO kāna kuhikuhi kikoʻī 〈111〉± 0.5° hiki ke hoʻoponopono pololei i ka wā o ka hana ʻana, kūpono ia no nā kaʻina hana nui. Hoʻohana nui ʻia kēia substrate i nā mea uila kiʻekiʻe, kiʻekiʻe-voltage, a me nā mea uila uila kiʻekiʻe, e like me nā mea hoʻololi mana, nā mea hoʻohuli, a me nā ʻāpana RF.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

4H/6H-P ʻAno SiC Composite Substrates Pākaukau ʻano maʻamau

4 iniha ke anawaena SilikaʻO ka pāpaʻi Carbide (SiC). Hōʻike

Papa			ʻO Zero MPD Production Papa (Z Papa)	Hana maʻamau Papa (P Papa)	Papa Dummy (D Papa)
Anawaena			99.5 mm~100.0 mm
mānoanoa			350 μm ± 25 μm
Kūlana Wafer			Koi aku: 2.0°-4.0° i ka [112(-)0] ± 0.5° no 4H/6H-P, On axis:〈111〉± 0.5° no 3C-N
Micropipe Density			0 knm-2
Kū'ē	p-ʻano 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ʻano 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Kūlana Pāha mua		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Ka lōʻihi pālahalaha			32.5 mm ± 2.0 mm
Ka lōʻihi pālahalaha lua			18.0 mm ± 2.0 mm
Kūlana Pāpā lua			ʻO ke alo silika i luna: 90° CW. mai Prime flat±5.0°
Hoʻokuʻu Edge			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
ʻoʻoleʻa			Polani Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe			ʻAʻohe		Huina lōʻihi ≤ 10 mm, hoʻokahi lōʻihi≤2 mm
Nā Papa Hex Ma ka Māmā Kiʻekiʻe			ʻĀpana hui ≤0.05%		ʻĀpana hui ≤0.1%
Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe			ʻAʻohe		ʻĀpana huila≤3%
Hoʻokomo ʻia ʻo Carbon Visual			ʻĀpana hui ≤0.05%		ʻĀpana hui ≤3%
ʻO ka ʻili o ka ʻili silikoni e ka māmā ikaika loa			ʻAʻohe		Hoʻohui lōʻihi≤1×wafer anawaena
Kiʻekiʻe ʻo Edge Chips e ka māmā ikaika			ʻAʻohe ʻae ʻia ≥0.2mm laula a me ka hohonu		5 ʻae ʻia, ≤1 mm kēlā me kēia
ʻO ka hoʻohaumia ʻana o ka ʻili Silicon e ka ikaika kiʻekiʻe			ʻAʻohe
Hoʻopili ʻia			ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

Nā memo:

※E pili ana nā palena hemahema i ka ʻili wafer holoʻokoʻa koe wale nō ka wahi i kāpae ʻia. # Pono e nānā ʻia nā ʻōpala ma ka maka Si wale nō.

Hoʻohana nui ʻia ka P-type 4H/6H-P 3C-N type 4-inch SiC substrate me ka 〈111〉± 0.5° orientation a me Zero MPD grade i nā noi uila kiʻekiʻe. ʻO kāna conductivity thermal maikaʻi loa a me ka uila haʻihaʻi kiʻekiʻe he mea kūpono ia no ka uila uila, e like me nā hoʻololi kiʻekiʻe-voltage, inverters, a me nā mea hoʻololi mana, e hana ana i nā kūlana koʻikoʻi. Eia kekahi, ʻo ke kūpaʻa ʻana o ka substrate i nā wela kiʻekiʻe a me ka corrosion e hōʻoia i ka hana paʻa i nā wahi paʻakikī. ʻO ka 〈111〉 ± 0.5 ° orientation e hoʻonui i ka pololei o ka hana ʻana, e kūpono ana i nā polokalamu RF a me nā noi kiʻekiʻe, e like me nā ʻōnaehana radar a me nā lako kamaʻilio uila.

ʻO nā mea maikaʻi o N-type SiC composite substrates e loaʻa:

1. High Thermal Conductivity: Efficient heat dissipation, e kūpono ana i nā wahi wela wela a me nā noi mana kiʻekiʻe.
2. High Breakdown Voltage: E hōʻoia i ka hana hilinaʻi i nā noi kiʻekiʻe-voltage e like me nā mea hoʻololi mana a me nā inverters.
3. Zero MPD (Micro Pipe Defect) Papa: Hōʻoia i nā hemahema liʻiliʻi, e hāʻawi ana i ke kūpaʻa a me ka hilinaʻi kiʻekiʻe i nā mea uila koʻikoʻi.
4. Kū'ē Kū'ē: Paʻa i nā wahi paʻakikī, e hōʻoia ana i ka hana lōʻihi i nā kūlana koi.
5. Kuhi pololei 〈111〉± 0.5° Orientation: E ʻae i ka alignment pololei i ka wā o ka hana ʻana, hoʻomaikaʻi i ka hana o ka hāmeʻa ma nā noi kiʻekiʻe a me RF.

ʻO ka holoʻokoʻa, ʻo ka P-type 4H/6H-P 3C-N type 4-inch SiC substrate me 〈111〉± 0.5° orientation a me Zero MPD grade he mea hana kiʻekiʻe no nā noi uila holomua. ʻO kāna conductivity thermal maikaʻi loa a me ka puʻupuʻu haʻihaʻi kiʻekiʻe e kūpono ia no nā uila uila e like me nā hoʻololi kiʻekiʻe-voltage, inverters, a me nā mea hoʻololi. ʻO ka māka Zero MPD e hōʻoia i nā hemahema liʻiliʻi, e hāʻawi ana i ka hilinaʻi a me ka paʻa i nā mea koʻikoʻi. Eia kekahi, ʻo ke kūpaʻa ʻana o ka substrate i ka corrosion a me nā wela kiʻekiʻe e hōʻoia i ka paʻa i nā kaiapuni paʻakikī. ʻO ka pololei 〈111〉± 0.5° orientation hiki ke hoʻoponopono pololei i ka wā o ka hana ʻana, kūpono loa ia no nā polokalamu RF a me nā noi kiʻekiʻe.