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ʻano-p 4H/6H-P 3C-N ʻANO SIC substrate 4 ʻīniha 〈111〉± 0.5°Zero MPD

ʻano-p 4H/6H-P 3C-N TYPE SIC substrate 4'īniha 〈111〉± 0.5°Zero MPD Kiʻi i Hōʻike ʻia
  • ʻano-p 4H/6H-P 3C-N ʻANO SIC substrate 4 ʻīniha 〈111〉± 0.5°Zero MPD
  • ʻano-p 4H/6H-P 3C-N ʻANO SIC substrate 4 ʻīniha 〈111〉± 0.5°Zero MPD
  • ʻano-p 4H/6H-P 3C-N ʻANO SIC substrate 4 ʻīniha 〈111〉± 0.5°Zero MPD
  • ʻano-p 4H/6H-P 3C-N ʻANO SIC substrate 4 ʻīniha 〈111〉± 0.5°Zero MPD

Wehewehe Pōkole:

ʻO ke ʻano P-4H/6H-P 3C-N SiC substrate, 4-'īniha me kahi orientation 〈111〉± 0.5° a me ka papa Zero MPD (Micro Pipe Defect), he mea semiconductor hana kiʻekiʻe i hoʻolālā ʻia no ka hana ʻana i nā mea uila holomua. ʻIke ʻia no kona conductivity thermal maikaʻi loa, ka voltage breakdown kiʻekiʻe, a me ke kūpaʻa ikaika i nā mahana kiʻekiʻe a me ka corrosion, kūpono kēia substrate no nā mea uila mana a me nā noi RF. Hōʻoiaʻiʻo ka papa Zero MPD i nā hemahema liʻiliʻi, e hōʻoiaʻiʻo ana i ka hilinaʻi a me ke kūpaʻa i nā mea hana kiʻekiʻe. ʻO kona orientation pololei 〈111〉± 0.5° e ʻae i ka hoʻonohonoho pololei i ka wā o ka hana ʻana, e kūpono ai no nā kaʻina hana nui. Hoʻohana nui ʻia kēia substrate i nā mea uila wela kiʻekiʻe, voltage kiʻekiʻe, a me ke alapine kiʻekiʻe, e like me nā mea hoʻololi mana, nā inverters, a me nā ʻāpana RF.


Nā hiʻohiʻona

Papa kuhikuhi maʻamau no nā ʻano SiC Composite 4H/6H-P

4 ʻīniha ke anawaena SiliconʻO ka Carbide (SiC) Substrate Nā kikoʻī

 

Papa Hana ʻana o ka Zero MPD

Papa (Z Papa)

 Hana Maʻamau

Papa (P Papa)

  

Papa Dummy (D Papa)
Anawaena 99.5 mm~100.0 mm
Mānoanoa 350 μm ± 25 μm
Hoʻonohonoho Wafer Ma waho o ke axis: 2.0°-4.0° i ka ʻaoʻao [11]2(-)0] ± 0.5° no 4H/6H-P, Oaxis n:〈111〉± 0.5° no 3C-N
Ka nui o ka micropipe 0 kenimika-2
Ke kū'ē ʻana ʻano-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
ʻano-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kūlana Pālahalaha Mua 4H/6H-P -

{1010} ± 5.0°
3C-N -

{110} ± 5.0°
Ka Lōʻihi Palahalaha Mua 32.5 mm ± 2.0 mm
Ka Lōʻihi Pālahalaha Lua 18.0 mm ± 2.0 mm
Kūlana Pālahalaha Lua Ke alo Silicon i luna: 90° CW. mai Prime flat±5.0°
Hoʻokaʻawale ʻana i ka lihi 3 mm 6 mm
LTV/TTV/Kakaka/Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
ʻOʻoleʻa Polani Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe ʻAʻohe Ka lōʻihi hui ≤ 10 mm, ka lōʻihi hoʻokahi ≤2 mm
Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤0.1%
Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe ʻAʻohe ʻĀpana hōʻuluʻulu ≤3%
Nā Hoʻokomo Kalapona ʻIke ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤3%
Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe ʻAʻohe Ka lōʻihi huina ≤1 × ke anawaena wafer
Kiʻekiʻe nā ʻāpana lihi ma o ka mālamalama ikaika ʻAʻohe mea i ʻae ʻia ≥0.2mm ka laulā a me ka hohonu 5 i ʻae ʻia, ≤1 mm kēlā me kēia
Ka haumia ʻana o ka ʻili Silicon ma o ka ikaika kiʻekiʻe ʻAʻohe
Ka hoʻopili ʻana Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi

Nā memo:

※Pili nā palena kīnā i ka ʻili wafer holoʻokoʻa koe wale nō ka ʻāpana i hoʻokaʻawale ʻia ma ka lihi. # Pono e nānā ʻia nā ʻōpala ma ka ʻaoʻao Si wale nō.

ʻO ke ʻano P-4H/6H-P 3C-N ʻano 4-'īniha SiC substrate me ka 〈111〉± 0.5° orientation a me ka Zero MPD grade i hoʻohana nui ʻia i nā noi uila hana kiʻekiʻe. ʻO kona conductivity thermal maikaʻi loa a me ka voltage breakdown kiʻekiʻe e kūpono ia no nā mea uila mana, e like me nā kuapo voltage kiʻekiʻe, nā inverters, a me nā mea hoʻololi mana, e hana ana i nā kūlana koʻikoʻi. Eia kekahi, ʻo ke kūpaʻa o ka substrate i nā mahana kiʻekiʻe a me ka corrosion e hōʻoiaʻiʻo i ka hana paʻa i nā ʻano ʻino. ʻO ke kuhikuhi pololei 〈111〉± 0.5° e hoʻonui i ka pololei o ka hana ʻana, e kūpono ana no nā polokalamu RF a me nā noi alapine kiʻekiʻe, e like me nā ʻōnaehana radar a me nā lako kamaʻilio uea ʻole.

ʻO nā pono o nā substrates composite N-type SiC:

1. Hoʻokele wela kiʻekiʻe: Hoʻopuehu maikaʻi i ka wela, e kūpono ana no nā wahi wela kiʻekiʻe a me nā noi mana kiʻekiʻe.
2. Ka Uila Hoʻopau Kiʻekiʻe: Hōʻoia i ka hana hilinaʻi i nā noi uila kiʻekiʻe e like me nā mea hoʻololi mana a me nā inverters.
3. ʻAʻohe MPD (Micro Pipe Defect) Papa: Hōʻoiaʻiʻo i nā hemahema liʻiliʻi, e hāʻawi ana i ke kūpaʻa a me ka hilinaʻi kiʻekiʻe i nā mea uila koʻikoʻi.
4. Ke Kū'ē ʻana i ka ʻAʻai: Paʻa i nā wahi ʻino, e hōʻoiaʻiʻo ana i ka hana lōʻihi i nā kūlana koi.
5. Kūlana Pololei 〈111〉± 0.5°: ʻAe i ka hoʻonohonoho pololei ʻana i ka wā o ka hana ʻana, e hoʻomaikaʻi ana i ka hana o ka hāmeʻa i nā noi alapine kiʻekiʻe a me RF.

 

Ma keʻano holoʻokoʻa, ʻo ka substrate SiC ʻano P-4H/6H-P 3C-N ʻano 4-'īniha me ka 〈111〉± 0.5° orientation a me ka Zero MPD grade he mea hana kiʻekiʻe ia no nā noi uila holomua. ʻO kona conductivity thermal maikaʻi loa a me ka voltage breakdown kiʻekiʻe e kūpono ia no nā mea uila mana e like me nā kuapo voltage kiʻekiʻe, nā inverters, a me nā mea hoʻololi. Hōʻoia ka Zero MPD grade i nā hemahema liʻiliʻi, e hāʻawi ana i ka hilinaʻi a me ke kūpaʻa i nā mea koʻikoʻi. Eia kekahi, ʻo ke kūpaʻa o ka substrate i ka corrosion a me nā mahana kiʻekiʻe e hōʻoia i ka lōʻihi i nā wahi ʻino. ʻO ke kuhikuhi pololei 〈111〉± 0.5° e ʻae i ka hoʻonohonoho pololei i ka wā o ka hana ʻana, e kūpono loa ia no nā mea RF a me nā noi alapine kiʻekiʻe.

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