ʻO ke substrate SiC ʻano P-ʻano 4H/6H-P 3C-N 4'iniha me ka mānoanoa o 350um Papa hana Papa Dummy

ʻO ke substrate SiC ʻano P 4H/6H-P 3C-N 4'iniha me ka mānoanoa o 350um Papa hana Papa Dummy Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO ke ʻano P-4H/6H-P 3C-N 4-'īniha SiC substrate, me ka mānoanoa o 350 μm, he mea semiconductor hana kiʻekiʻe i hoʻohana nui ʻia i ka hana ʻana i nā mea uila. ʻIke ʻia no kona conductivity thermal kūikawā, ka voltage breakdown kiʻekiʻe, a me ke kūʻē ʻana i nā mahana koʻikoʻi a me nā wahi corrosive, kūpono kēia substrate no nā noi uila mana. Hoʻohana ʻia ka substrate hana-pae i ka hana nui, e hōʻoiaʻiʻo ana i ka kaohi maikaʻi a me ka hilinaʻi kiʻekiʻe i nā mea uila holomua. I kēia manawa, hoʻohana nui ʻia ka substrate dummy-grade no ka debugging kaʻina hana, ka calibration lako, a me ka prototyping. ʻO nā waiwai kiʻekiʻe o SiC e lilo ia i koho maikaʻi loa no nā mea hana e hana ana i nā wahi wela kiʻekiʻe, voltage kiʻekiʻe, a me ke alapine kiʻekiʻe, me nā mea mana a me nā ʻōnaehana RF.

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Nā hiʻohiʻona

Papa ʻaina palena 4 iniha SiC substrate P-type 4H/6H-P 3C-N

4 ʻīniha ke anawaena SiliconʻO ka Carbide (SiC) Substrate Nā kikoʻī

Papa			Hana ʻana o ka Zero MPD Papa (Z Papa)	Hana Maʻamau Papa (P Papa)	Papa Dummy (D Papa)
Anawaena			99.5 mm~100.0 mm
Mānoanoa			350 μm ± 25 μm
Hoʻonohonoho Wafer			Ma waho o ke axis: 2.0°-4.0° i ka ʻaoʻao [11]2(-)0] ± 0.5° no 4H/6H-P, Oaxis n:〈111〉± 0.5° no 3C-N
Ka nui o ka micropipe			0 kenimika-2
Ke kū'ē ʻana	ʻano-p 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	ʻano-n 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Kūlana Pālahalaha Mua		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Ka Lōʻihi Palahalaha Mua			32.5 mm ± 2.0 mm
Ka Lōʻihi Pālahalaha Lua			18.0 mm ± 2.0 mm
Kūlana Pālahalaha Lua			Ke alo Silicon i luna: 90° CW. mai Prime flat±5.0°
Hoʻokaʻawale ʻana i ka lihi			3 mm		6 mm
LTV/TTV/Kakaka/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
ʻOʻoleʻa			Polani Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe			ʻAʻohe		Ka lōʻihi hui ≤ 10 mm, ka lōʻihi hoʻokahi ≤2 mm
Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe			ʻĀpana hōʻuluʻulu ≤0.05%		ʻĀpana hōʻuluʻulu ≤0.1%
Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe			ʻAʻohe		ʻĀpana hōʻuluʻulu ≤3%
Nā Hoʻokomo Kalapona ʻIke			ʻĀpana hōʻuluʻulu ≤0.05%		ʻĀpana hōʻuluʻulu ≤3%
Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe			ʻAʻohe		Ka lōʻihi huina ≤1 × ke anawaena wafer
Kiʻekiʻe nā ʻāpana lihi ma o ka mālamalama ikaika			ʻAʻohe mea i ʻae ʻia ≥0.2mm ka laulā a me ka hohonu		5 i ʻae ʻia, ≤1 mm kēlā me kēia
Ka haumia ʻana o ka ʻili Silicon ma o ka ikaika kiʻekiʻe			ʻAʻohe
Ka hoʻopili ʻana			Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi

Nā memo:

※Pili nā palena kīnā i ka ʻili wafer holoʻokoʻa koe wale nō ka ʻāpana i hoʻokaʻawale ʻia ma ka lihi. # Pono e nānā ʻia nā ʻōpala ma ka ʻaoʻao Si wale nō.

Hoʻohana nui ʻia ka substrate SiC ʻano-P 4H/6H-P 3C-N 4-'īniha me ka mānoanoa o 350 μm i ka hana ʻana i nā mea uila a me nā mea mana holomua. Me ka conductivity thermal maikaʻi loa, ka voltage breakdown kiʻekiʻe, a me ke kūpaʻa ikaika i nā kaiapuni koʻikoʻi, kūpono kēia substrate no nā mea uila mana hana kiʻekiʻe e like me nā kuapo voltage kiʻekiʻe, nā inverters, a me nā mea RF. Hoʻohana ʻia nā substrates papa hana i ka hana nui, e hōʻoiaʻiʻo ana i ka hana pono a pololei hoʻi o nā mea hana, he mea koʻikoʻi ia no nā mea uila mana a me nā noi alapine kiʻekiʻe. Ma ka ʻaoʻao ʻē aʻe, hoʻohana nui ʻia nā substrates dummy-grade no ka hoʻoponopono ʻana i ke kaʻina hana, ka hoʻāʻo ʻana i nā lako, a me ka hoʻomohala ʻana i nā prototype, e kōkua ana i ka mālama ʻana i ka kaohi maikaʻi a me ke kūlike o ke kaʻina hana i ka hana semiconductor.

KikoʻīʻO nā pono o nā substrates composite N-type SiC e komo pū ana

Ka Hoʻokele Wera KiʻekiʻeʻO ka hoʻopuehu wela kūpono e kūpono ai ke substrate no nā noi wela kiʻekiʻe a me ka mana kiʻekiʻe.
Ka Uila Haʻihaʻi KiʻekiʻeKākoʻo i ka hana uila kiʻekiʻe, e hōʻoiaʻiʻo ana i ka hilinaʻi i nā mea uila mana a me nā polokalamu RF.
Ke kū'ē ʻana i nā wahi ʻino: Paʻa i nā kūlana koʻikoʻi e like me ke kiʻekiʻe o nā mahana a me nā wahi ʻino, e hōʻoiaʻiʻo ana i ka hana lōʻihi.
Pololei Papa Hana: Hōʻoia i ka hana kiʻekiʻe a me ka hilinaʻi i ka hana nui ʻana, kūpono no nā noi mana holomua a me RF.
Papa Hoʻāʻo Dummy no ka Hoʻāʻo ʻana: Hiki ke hoʻololi pololei i ke kaʻina hana, ka hoʻāʻo ʻana i nā lako, a me ke ʻano hana prototype me ka ʻole o ka hoʻopilikia ʻana i nā wafers papa hana.

Ma keʻano holoʻokoʻa, hāʻawi ka substrate SiC ʻano-P 4H/6H-P 3C-N 4-'īniha me ka mānoanoa o 350 μm i nā pono koʻikoʻi no nā noi uila hana kiʻekiʻe. ʻO kona conductivity thermal kiʻekiʻe a me ka voltage breakdown e kūpono ia no nā wahi mana kiʻekiʻe a me nā wahi wela kiʻekiʻe, ʻoiai ʻo kona kūpaʻa ʻana i nā kūlana ʻino e hōʻoiaʻiʻo ana i ka lōʻihi a me ka hilinaʻi. Hōʻoia ka substrate papa hana i ka hana pololei a kūlike i ka hana nui o nā mea uila mana a me nā mea RF. I kēia manawa, he mea nui ka substrate dummy-grade no ka calibration kaʻina hana, ka hoʻāʻo ʻana i nā lako, a me ka prototyping, e kākoʻo ana i ka kaohi maikaʻi a me ke kūlike i ka hana semiconductor. ʻO kēia mau hiʻohiʻona e hana i nā substrates SiC i mea maʻalahi loa no nā noi holomua.

Kiʻikuhi kikoʻī

Ma mua: ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua

Aʻe: ʻano-p 4H/6H-P 3C-N ʻANO SIC substrate 4 ʻīniha 〈111〉± 0.5°Zero MPD

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