P-type SiC wafer 4H/6H-P 3C-N 6 iniha mānoanoa 350 μm me ka Primary Flat Orientation

ʻO ka wehewehe pōkole:

ʻO ka P-type SiC wafer, 4H/6H-P 3C-N, he 6-inch semiconductor material me ka mānoanoa o 350 μm a me ka papa kuhikuhi mua, i hoʻolālā ʻia no nā noi uila holomua. Ua ʻike ʻia no kona conductivity thermal kiʻekiʻe, ka uila haʻihaʻi kiʻekiʻe, a me ke kūpaʻa ʻana i nā wela wela a me nā wahi corrosive, kūpono kēia wafer no nā mea uila kiʻekiʻe. Hoʻokomo ka P-type doping i nā lua e like me nā mea lawe uku mua, e kūpono ana no ka uila uila a me nā noi RF. ʻO kāna hana paʻa e hōʻoia i ka hana paʻa ma lalo o nā kūlana kiʻekiʻe-volt a me nā kūlana kiʻekiʻe, kūpono ia no nā mea mana, nā uila uila kiʻekiʻe, a me ka hoʻololi ʻana i ka ikehu kiʻekiʻe. ʻO ka hoʻonohonoho papa mua e hōʻoia i ka alignment pololei i ke kaʻina hana, e hāʻawi ana i ka kūlike i ka hana ʻana i nā mea hana.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Hōʻike 4H/6H-P ʻAno SiC Composite Substrates Papakaukau hoʻohālikelike maʻamau

6 iniha ke anawaena Silicon Carbide (SiC). Hōʻike

Papa			ʻO Zero MPD ProductionPapa (Z Papa)	Hana maʻamauPapa (P Papa)	Papa Dummy (D Papa)
Anawaena			145.5 mm~150.0 mm
mānoanoa			350 μm ± 25 μm
Kūlana Wafer			-Offaxis: 2.0°-4.0° i [1120] ± 0.5° no 4H/6H-P, Ma ke axis:〈111〉± 0.5° no 3C-N
Micropipe Density			0 knm-2
Kū'ē	p-ʻano 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ʻano 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Kūlana Pāha mua		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Ka lōʻihi pālahalaha			32.5 mm ± 2.0 mm
Ka lōʻihi pālahalaha lua			18.0 mm ± 2.0 mm
Kūlana Pāpā lua			ʻO ke alo silika i luna: 90° CW. mai Prime flat ± 5.0°
Hoʻokuʻu Edge			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
ʻoʻoleʻa			Polani Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe			ʻAʻohe		Huina lōʻihi ≤ 10 mm, hoʻokahi lōʻihi≤2 mm
Nā Papa Hex Ma ka Māmā Kiʻekiʻe			ʻĀpana hui ≤0.05%		ʻĀpana hui ≤0.1%
Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe			ʻAʻohe		ʻĀpana huila≤3%
Hoʻokomo ʻia ʻo Carbon Visual			ʻĀpana hui ≤0.05%		ʻĀpana hui ≤3%
ʻO ka ʻili o ka ʻili silikoni e ka māmā ikaika loa			ʻAʻohe		Hoʻohui lōʻihi≤1×wafer anawaena
Kiʻekiʻe ʻo Edge Chips e ka māmā ikaika			ʻAʻohe ʻae ʻia ≥0.2mm laula a me ka hohonu		5 ʻae ʻia, ≤1 mm kēlā me kēia
ʻO ka hoʻohaumia ʻana o ka ʻili Silicon e ka ikaika kiʻekiʻe			ʻAʻohe
Hoʻopili ʻia			ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

Nā memo:

※ Hoʻopili nā palena hemahema i ka ʻili wafer holoʻokoʻa koe wale nō ka wahi i kāpae ʻia. # Pono e nānā ʻia nā ʻōpala ma ka maka Si o

ʻO ka P-type SiC wafer, 4H/6H-P 3C-N, me kona nui 6-ʻīniha a me 350 μm mānoanoa, he hana koʻikoʻi i ka hana ʻenehana o nā uila mana kiʻekiʻe. ʻO kāna conductivity thermal maikaʻi loa a me ka uila haʻihaʻi kiʻekiʻe e kūpono ia no ka hana ʻana i nā ʻāpana e like me nā hoʻololi mana, diodes, a me nā transistors i hoʻohana ʻia i nā kaiapuni kiʻekiʻe e like me nā kaʻa uila, nā mana mana, a me nā ʻōnaehana ikehu hou. ʻO ka hiki i ka wafer ke hana maikaʻi i nā kūlana koʻikoʻi e hōʻoia i ka hana hilinaʻi i nā noi ʻoihana e koi ana i ka mana kiʻekiʻe a me ka pono o ka ikehu. Hoʻohui ʻia, kōkua kāna orientation papa mua i ka alignment pololei i ka wā o ka hana ʻana o nā hāmeʻa, hoʻonui i ka hana pono a me ka kūlike o ka huahana.

ʻO nā mea maikaʻi o N-type SiC composite substrates

Kiʻekiʻe Thermal Conductivity: P-type SiC wafers e hoopau pono i ka wela, e lilo ia lakou i mea kupono no na hana wela wela.
Kiʻekiʻe Haʻahaʻa Voltage: Hiki ke kū i nā voltage kiʻekiʻe, e hōʻoiaʻiʻo i ka hilinaʻi i ka uila uila a me nā mea uila kiʻekiʻe.
Kū'ē i nā Kaiapuni Paʻakikī: ʻO ka lōʻihi maikaʻi loa i nā kūlana koʻikoʻi, e like me nā wela kiʻekiʻe a me nā wahi corrosive.
Hoʻololi mana kūpono: Hoʻomaʻamaʻa ka doping P-type i ka mālama pono ʻana i ka mana, hana i ka wafer kūpono no nā ʻōnaehana hoʻololi ikehu.
Kūlana Pāha mua: E hōʻoia i ka alignment pololei i ka wā o ka hana ʻana, hoʻomaikaʻi i ka pololei a me ka paʻa.
ʻO ka ʻili lahilahi (350 μm): Kākoʻo ka mānoanoa maikaʻi loa o ka wafer i ka hoʻohui ʻia ʻana i loko o nā mea uila i hoʻopaʻa ʻia.

Ma keʻano holoʻokoʻa, hāʻawi ka P-type SiC wafer, 4H/6H-P 3C-N, i nā ʻano mea maikaʻi e kūpono loa ia no nā noi ʻoihana a me ka uila. ʻO kāna conductivity thermal kiʻekiʻe a me ka puʻupuʻu haʻihaʻi e hiki ai i ka hana hilinaʻi i nā kaiapuni kiʻekiʻe a me nā kaiapuni kiʻekiʻe, ʻoiai ʻo kona kūpaʻa ʻana i nā kūlana paʻakikī e hōʻoia i ka paʻa. Hiki i ka P-type doping ke hoʻololi i ka mana maikaʻi, i mea kūpono no ka uila uila a me nā ʻōnaehana ikehu. Hoʻohui ʻia, ʻo ka hoʻonohonoho paʻa mua o ka wafer e hōʻoia i ka alignment pololei i ka wā o ke kaʻina hana, e hoʻonui ai i ka hana kūlike. Me ka mānoanoa o 350 μm, ua kūpono ia no ka hoʻohui ʻana i nā mea hoʻomohala holomua.