Nā huahana
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ʻO ke ʻano hana ʻili o ka titanium-doped sapphire crystal laser rods
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N ʻano ʻAno Hana ʻia 500um mānoanoa
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2 'īniha 6H-N Silicon Carbide Substrate Sic Wafer Papalua Polished Conductive Prime Grade Mos Grade
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200mm 8 iniha GaN ma ka sapphire Epi-layer wafer substrate
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ʻO ka pahu Sapphire KY ʻO ke ʻano akaka a hiki ke hana ʻia
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6 Iniha Conductive SiC Composite Substrate 4H Anawaena 150mm Ra≤0.2nm Warp≤35μm
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Infrared Nanosecond Laser Drilling lako no Glass Drilling thickness≤20mm
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ʻO ka ʻenehana ʻenehana microjet ʻenehana wafer e ʻoki ana i ka hoʻoili waiwai SiC
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Silicon carbide daimana mīkini ʻoki uea 4/6/8/12 ʻīniha SiC ingot hana
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ʻO ke ʻano CVD no ka hana ʻana i nā mea maka SiC maʻemaʻe kiʻekiʻe i loko o ka umu silicon carbide synthesis ma 1600 ℃
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ʻO ke kūpaʻa ʻana o ka carbide silikoni i ka umu aniani lōʻihi e ulu ana he 6/8/12 ʻīniha SiC ingot crystal PVT ala.
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ʻO ka mīkini pahu pahu pālua monocrystalline silicon rod processing 6/8/12 ʻīniha ʻili palahalaha Ra≤0.5μm