Nā huahana
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ʻO ke koʻokoʻo hāpai ʻo Sapphire ʻoihana a me ka pine, ʻo ke pine Sapphire Al2O3 paʻakikī kiʻekiʻe no ka lawelawe ʻana i ka wafer, ʻōnaehana Radar a me ka hana ʻana o Semiconductor - Diameter 1.6mm a 2mm
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ʻO ka Pin Lift Sapphire i hoʻopilikino ʻia, nā ʻāpana Optical Crystal hoʻokahi Al2O3 paʻakikī kiʻekiʻe no ka hoʻoili Wafer - Diameter 1.6mm, 1.8mm, hiki ke hoʻopilikino ʻia no nā noi ʻoihana
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aniani poepoe sapphire papa optical Al2O3 mea Ka laulā hoʻoili 0.15-5.5um Dia 1mm 1.5mm
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ʻO ka pōpō sapphire Dia 1.0 1.1 1.5 no ka aniani pōpō optical paʻakikī kiʻekiʻe kristal hoʻokahi
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ʻO ke anawaena sapphire kala sapphire no ka uaki, hiki ke hoʻopilikino ʻia ke anawaena 40 38mm ka mānoanoa 350um 550um, kiʻekiʻe ke aniani
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ʻO ka wafer InSb 2'īniha 3'īniha undoped Ntype P type orientation 111 100 no nā mea ʻike Infrared
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Nā wafer Indium Antimonide (InSb) ʻano N ʻano P ʻano Epi mākaukau ʻole ʻia Te doped a i ʻole Ge doped 2 ʻīniha 3 ʻīniha 4 ʻīniha ka mānoanoa
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2'īniha pahu pahu wafer cassette hoʻokahi PP a i ʻole PC Hoʻohana ʻia i nā hoʻonā kālā wafer 1'īniha 3'īniha 4'īniha 5'īniha 6'īniha 12'īniha loaʻa
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
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ʻO ke ʻano hana Sapphire KY a me EFG ʻO ke koʻokoʻo sapphire paipu kaomi kiʻekiʻe
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ʻO ka ʻāpana sapphire 3'iniha 4'iniha 6'iniha Monocrystal CZ KY method Customizable
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ʻO GaAs mana kiʻekiʻe epitaxial wafer substrate gallium arsenide wafer mana laser wavelength 905nm no ka mālama lapaʻau laser