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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Hoʻomaʻemaʻe kiʻekiʻe Semi-Insulating ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa ke kiʻi i hōʻike ʻia.
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa

ʻO ka wehewehe pōkole:

Hāʻawi mākou i kahi koho like ʻole o nā wafers SiC (Silicon Carbide) kiʻekiʻe, me ka nānā pono ʻana i nā wafers N-type 4H-N a me 6H-N, i kūpono no nā noi i nā optoelectronics kiʻekiʻe, nā mana mana, a me nā wahi wela kiʻekiʻe. . ʻIke ʻia kēia mau wafers N-type no kā lākou conductivity thermal kūikawā, kūpaʻa uila koʻikoʻi, a me ka lōʻihi kupaianaha, e hoʻomaʻamaʻa iā lākou no nā noi kiʻekiʻe e like me ka uila uila, nā ʻōnaehana kaʻa kaʻa uila, nā mea hoʻohuli ikehu hou, a me nā lako mana ʻoihana. Ma waho aʻe o kā mākou mau hāʻawi N-type, hāʻawi pū mākou i ka P-type 4H / 6H-P a me 3C SiC wafers no nā pono kūikawā, me nā mea kiʻekiʻe-frequency a me RF, a me nā noi photonic. Loaʻa kā mākou wafers i nā nui mai ka 2 iniha a hiki i ka 8 iniha, a hāʻawi mākou i nā hoʻonā i hoʻohālikelike ʻia e hoʻokō i nā koi kikoʻī o nā ʻano ʻoihana like ʻole. No nā kikoʻī hou aku a i ʻole nā ​​nīnau, e ʻoluʻolu e kelepona mai iā mākou.


Huahana Huahana

Huahana Huahana

Waiwai

4H-N a me 6H-N (N-type SiC Wafers)

Noi:Hoʻohana mua ʻia i ka uila uila, optoelectronics, a me nā noi wela kiʻekiʻe.

Anawaena:50.8 mm a 200 mm.

mānoanoa:350 μm ± 25 μm, me ka mānoanoa koho o 500 μm ± 25 μm.

Kū'ē:N-ʻano 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade); N-ʻano 3C-N: ≤ 0.8 mΩ·cm (Z-grade), ≤ 1 mΩ·cm (P-grade).

ʻākala:Ra ≤ 0.2 nm (CMP a i ʻole MP).

ʻO ka mānoanoa micropipe (MPD):< 1 ea/cm².

TTV: ≤ 10 μm no nā anawaena a pau.

ʻAha: ≤ 30 μm (≤ 45 μm no nā wafers 8 iniha).

Hoʻokuʻu ʻia ʻo Edge:3 mm a 6 mm ma muli o ke ʻano wafer.

Packaging:ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi.

Loaʻa ka nui o Ohter 3inch 4inch 6inch 8inch

HPSI (Nā Wafer SiC Semi-Insulating High Purity)

Noi:Hoʻohana ʻia no nā hāmeʻa e koi ana i ke kūpaʻa kiʻekiʻe a me ka hana paʻa, e like me nā polokalamu RF, nā noi photonic, a me nā mea ʻike.

Anawaena:50.8 mm a 200 mm.

mānoanoa:ʻO ka mānoanoa maʻamau o 350 μm ± 25 μm me nā koho no nā wafers mānoanoa a hiki i 500 μm.

ʻākala:Ra ≤ 0.2 nm.

ʻO ka mānoanoa micropipe (MPD): ≤ 1 ʻea/cm².

Kū'ē:Kū'ē kiʻekiʻe, hoʻohana maʻamau i nā noi semi-insulating.

ʻAha: ≤ 30 μm (no nā liʻiliʻi liʻiliʻi), ≤ 45 μm no nā anawaena nui aʻe.

TTV: ≤ 10 μm.

Loaʻa ka nui o Ohter 3inch 4inch 6inch 8inch

4H-P、6H-P&3C SiC wafer(P-type SiC Wafers)

Noi:ʻO ka mea nui no nā mea mana a me nā alapine kiʻekiʻe.

Anawaena:50.8 mm a 200 mm.

mānoanoa:350 μm ± 25 μm a i ʻole nā ​​koho maʻamau.

Kū'ē:P-ʻano 4H/6H-P: ≤ 0.1 Ω·cm (Z-papa), ≤ 0.3 Ω·cm (P-papa).

ʻākala:Ra ≤ 0.2 nm (CMP a i ʻole MP).

ʻO ka mānoanoa micropipe (MPD):< 1 ea/cm².

TTV: ≤ 10 μm.

Hoʻokuʻu ʻia ʻo Edge:3 mm a 6 mm.

ʻAha: ≤ 30 μm no nā nui liʻiliʻi, ≤ 45 μm no nā nui nui.

Loaʻa ka nui o Ohter 3inch 4inch 6inch5×5 10×10

Pākaukau ʻĀpana ʻikepili ʻāpana

Waiwai

2 iniha

3 iniha

4 iniha

6 iniha

8 iniha

ʻAno

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Anawaena

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

mānoanoa

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um；

500±25um

500±25um

500±25um

500±25um

a i ʻole i hana ʻia

a i ʻole i hana ʻia

a i ʻole i hana ʻia

a i ʻole i hana ʻia

a i ʻole i hana ʻia

ʻoʻoleʻa

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Warp

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Eli/Eli

CMP/MP

MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

Kinohi

poepoe, palahalaha 16mm ；OF 22mm ; OF 30/32.5mm; O ka Loi47.5mm; NOTCH; NOTCH;

Bevel

45°, SEMI Spec; C Kinohi

 Papa

Papa hana no MOS&SBD; Papa noiʻi ; Papa Dummy, Hua wafer Grade

ʻŌlelo

ʻO ke anawaena, mānoanoa, Orientation, nā kikoʻī ma luna nei hiki ke hoʻopili ʻia ma kāu noi

 

Nā noi

·Mea uila uila

He mea koʻikoʻi nā wafers SiC ʻano N i nā mea uila uila ma muli o ko lākou hiki ke hoʻopaʻa i ka volta kiʻekiʻe a me ka manawa kiʻekiʻe. Hoʻohana maʻamau ʻia lākou i nā mea hoʻololi mana, inverters, a me nā kaʻa kaʻa no nā ʻoihana e like me ka ikehu hou, nā kaʻa uila, a me ka automation ʻoihana.

· Optoelectronics
Hoʻohana ʻia nā mea SiC ʻano N, ʻoi aku no nā noi optoelectronic, i nā mea hana e like me nā kukui-emitting diodes (LED) a me nā diodes laser. ʻO kā lākou conductivity thermal kiʻekiʻe a me ka bandgap ākea e kūpono iā lākou no nā mea hana optoelectronic kiʻekiʻe.

·Nā mea hoʻohana wela kiʻekiʻe
Ua kūpono nā wafers 4H-N 6H-N SiC no nā kaiapuni wela kiʻekiʻe, e like me nā mea ʻike a me nā mea mana i hoʻohana ʻia i ka aerospace, automotive, a me nā noi ʻoihana kahi mea koʻikoʻi ka wela a me ka paʻa i nā mahana kiʻekiʻe.

·Nā mea hana RF
Hoʻohana ʻia nā wafers 4H-N 6H-N SiC i nā mea lekiō (RF) e hana ana i nā pae kiʻekiʻe. Hoʻohana ʻia lākou i nā ʻōnaehana kamaʻilio, ʻenehana radar, a me nā kamaʻilio satellite, kahi e pono ai ka mana kiʻekiʻe a me ka hana.

·Nā polokalamu Photonic
I nā photonics, hoʻohana ʻia nā wafers SiC no nā mea like me nā photodetectors a me nā modulators. ʻO nā waiwai kūʻokoʻa o ka mea e hiki ai ke hana maikaʻi i ka hana māmā, modulation, a me ka ʻike ʻana i nā ʻōnaehana kamaʻilio optical a me nā mea hana kiʻi.

·Nā mea ʻike
Hoʻohana ʻia nā wafers SiC i nā noi sensor like ʻole, ʻoi loa i nā wahi paʻakikī kahi e hāʻule ai nā mea ʻē aʻe. Hoʻopili ʻia kēia mau mea me ka wela, ke kaomi, a me nā mea ʻike kemika, he mea nui ia i nā kula e like me ka automotive, aila & gas, a me ka nānā ʻana i ke kaiapuni.

·Pūnaehana Kaʻa Uila
He hana koʻikoʻi ka ʻenehana SiC i nā kaʻa uila ma o ka hoʻomaikaʻi ʻana i ka pono a me ka hana o nā ʻōnaehana hoʻokele. Me nā semiconductors mana SiC, hiki i nā kaʻa uila ke hoʻokō i ke ola pākaukau ʻoi aku ka maikaʻi, ʻoi aku ka wikiwiki o ka hoʻouka ʻana, a me ka ʻoi aku ka maikaʻi o ka ikehu.

·Nā Nani Kiʻekiʻe a me nā mea hoʻololi Photonic
Ma nā ʻenehana sensor kiʻekiʻe, hoʻohana ʻia nā wafers SiC no ka hoʻokumu ʻana i nā sensor kiʻekiʻe no nā noi i nā robotics, nā mea lapaʻau, a me ka nānā ʻana i ke kaiapuni. Ma nā mea hoʻololi photonic, hoʻohana ʻia nā waiwai o SiC e hiki ai i ka hoʻololi maikaʻi ʻana o ka ikehu uila i nā hōʻailona optical, he mea koʻikoʻi i ke kelepona a me ka ʻoihana pūnaewele wikiwiki.

N&A

Q：He aha ka 4H i ka 4H SiC?
A："4H" ma 4H SiC e pili ana i ka hana aniani o ka silikon carbide, he ano hexagonal me eha papa (H). Hōʻike ka "H" i ke ʻano o ka polytype hexagonal, e hoʻokaʻawale iā ia mai nā polytypes SiC ʻē aʻe e like me 6H a i ʻole 3C.

Q：He aha ka wela o ka 4H-SiC?
A: ʻO ka conductivity thermal o 4H-SiC (Silicon Carbide) ma kahi o 490-500 W/m·K ma ke ana wela. ʻO kēia conductivity thermal kiʻekiʻe he mea kūpono ia no nā noi i ka uila uila a me nā kaiapuni wela kiʻekiʻe, kahi e koʻikoʻi ai ka hoʻopau wela.

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