SiC substrate 3inihi 350um mānoanoa HPSI ʻano Prime Grade Dummy grade
Waiwai
ʻĀpana | Papa Hana Hana | Papa noiʻi | Papa Dummy | Unite |
Papa | Papa Hana Hana | Papa noiʻi | Papa Dummy | |
Anawaena | 76.2 ± 0.5 | 76.2 ± 0.5 | 76.2 ± 0.5 | mm |
mānoanoa | 500 ± 25 | 500 ± 25 | 500 ± 25 | µm |
Kūlana Wafer | Ma ka axis: <0001> ± 0.5° | Ma ka axis: <0001> ± 2.0° | Ma ka axis: <0001> ± 2.0° | degere |
ʻOiʻa Micropipe (MPD) | ≤ 1 | ≤ 5 | ≤ 10 | knm−2^-2−2 |
Kū'ē Uila | ≥ 1E10 | ≥ 1E5 | ≥ 1E5 | Ω·cm |
Dopant | Wehe ʻia | Wehe ʻia | Wehe ʻia | |
Kūlana Pāha mua | {1-100} ± 5.0° | {1-100} ± 5.0° | {1-100} ± 5.0° | degere |
Ka lōʻihi pālahalaha | 32.5 ± 3.0 | 32.5 ± 3.0 | 32.5 ± 3.0 | mm |
Ka lōʻihi pālahalaha lua | 18.0 ± 2.0 | 18.0 ± 2.0 | 18.0 ± 2.0 | mm |
Kūlana Pāpā lua | 90° CW mai ka papahele mua ± 5.0° | 90° CW mai ka papahele mua ± 5.0° | 90° CW mai ka papahele mua ± 5.0° | degere |
Hoʻokuʻu Edge | 3 | 3 | 3 | mm |
LTV/TTV/Bow/Warp | 3 / 10 / ±30 / 40 | 3 / 10 / ±30 / 40 | 5 / 15 / ±40 / 45 | µm |
ʻAole ʻili | Si-maka: CMP, C-maka: Polina | Si-maka: CMP, C-maka: Polina | Si-maka: CMP, C-maka: Polina | |
Nā māwae (māmā Kiʻekiʻe) | ʻAʻohe | ʻAʻohe | ʻAʻohe | |
Nā Papa Hex (Kukui Kiʻekiʻe) | ʻAʻohe | ʻAʻohe | ʻĀpana hui 10% | % |
Nā ʻāpana Polytype (Kukui Kiʻekiʻe) | ʻĀpana hui 5% | ʻĀpana hui 20% | ʻĀpana hui 30% | % |
Nā ʻōpala (Kukui Kiʻekiʻe) | ≤ 5 ʻōpala, hui pū ʻia ≤ 150 | ≤ 10 ʻōpala, hui pū ʻia ≤ 200 | ≤ 10 ʻōpala, hui pū ʻia ≤ 200 | mm |
ʻO ka ʻoki ʻoki | ʻAʻohe ≥ 0.5 mm laula/hohonu | 2 ʻae ʻia ≤ 1 mm laula/hohonu | 5 ʻae ʻia ≤ 5 mm laula/hohonu | mm |
Hoʻohaumia ʻili | ʻAʻohe | ʻAʻohe | ʻAʻohe |
Nā noi
1. Kiekie-Mana Electronics
ʻO ka conductivity thermal kiʻekiʻe a me ka bandgap ākea o nā wafers SiC e kūpono iā lākou no nā mea mana kiʻekiʻe, kiʻekiʻe.
●MOSFET a me IGBT no ka hoʻololi mana.
● ʻO nā ʻōnaehana mana kaʻa uila kiʻekiʻe, me nā mea hoʻohuli a me nā loina.
●Smart grid infrastructure a me nā ʻōnaehana ikehu hou.
2. RF a me nā Pūnaehana Microwave
Hiki i nā substrate SiC ke hiki i ka RF kiʻekiʻe a me nā noi microwave me ka liʻiliʻi o ka nalowale o ka hōʻailona:
●Ke kelepona a me nā ʻōnaehana ukali.
● Pūnaehana radar aerospace.
● ʻO nā ʻāpana pūnaewele 5G kiʻekiʻe.
3. Optoelectronics a me nā meaʻike
Kākoʻo nā waiwai kūʻokoʻa o SiC i nā ʻano noi optoelectronic:
●UV detectors no ka nānā 'ana i ke kaiapuni a me ka 'ike 'oihana.
●LED a me ka laser substrate no ka paʻa-kūlana kukui a me ka pololei mea kani.
● ʻO nā mea ʻike wela kiʻekiʻe no ka aerospace a me nā ʻoihana kaʻa.
4. Noiʻi a hoʻomohala
ʻO ka ʻokoʻa o nā māka (Production, Research, Dummy) hiki i ka hoʻokolohua ʻokiʻoki a me ka prototyping hāmeʻa ma ke kula a me ka ʻoihana.
Pono
● Pono:ʻO ke kūpaʻa maikaʻi a me ke kūpaʻa ma waena o nā papa.
● Hoʻopilikino:Hoʻonohonoho ʻia a me nā mānoanoa e kūpono i nā pono like ʻole.
●Maʻemaʻe Kiʻekiʻe:ʻO ka haku mele ʻole ʻia e hōʻoia i nā ʻokoʻa liʻiliʻi pili i ka haumia.
●Scalability:Hoʻokō i nā koi o ka hana nui a me ka noiʻi hoʻokolohua.
ʻO nā wafers SiC maʻemaʻe kiʻekiʻe 3-inihi kou ʻīpuka i nā mea hana kiʻekiʻe a me nā holomua ʻenehana hou. No nā nīnau a me nā kikoʻī kikoʻī, e kelepona mai iā mākou i kēia lā.
Hōʻuluʻulu manaʻo
ʻO ka 3-inch High Purity Silicon Carbide (SiC) Wafers, i loaʻa i ka Production, Research, and Dummy Grades, he mau substrates premium i hoʻolālā ʻia no nā uila uila kiʻekiʻe, RF/microwave system, optoelectronics, a me R&D kiʻekiʻe. ʻO kēia mau wafers e pili ana i ka undoped, semi-insulating waiwai me ka resistivity maikaʻi loa (≥1E10 Ω·cm no ka Papa Hana Hana), haʻahaʻa micropipe haʻahaʻa (≤1 cm−2^-2−2), a me ka maikaʻi o ka ʻili. Hoʻolālā ʻia lākou no nā noi hana kiʻekiʻe, me ka hoʻololi ʻana i ka mana, kelepona, UV sensing, a me nā ʻenehana LED. Me nā hoʻonohonoho hoʻonohonoho maʻamau, ʻoi aku ka maikaʻi o ka thermal conductivity, a me nā waiwai mechanical ikaika, hiki i kēia mau wafers SiC ke hiki i ka hana pono a me ka hilinaʻi ʻana i nā mea hana hou i nā ʻoihana.