ʻO ka wafer Epitaxial 4H-N HPSI SiC 6H-N 6H-P 3C-N SiC no MOS a i ʻole SBD
ʻO ka SiC Substrate SiC Epi-wafer Brief
Hāʻawi mākou i kahi waihona piha o nā substrates SiC kiʻekiʻe a me nā wafers sic i nā polytypes he nui a me nā ʻano doping—me 4H-N (conductive ʻano-n), 4H-P (conductive ʻano-p), 4H-HPSI (semi-insulating maʻemaʻe kiʻekiʻe), a me 6H-P (conductive ʻano-p)—ma nā anawaena mai 4″, 6″, a me 8″ a hiki i ka 12″. Ma waho aʻe o nā substrates ʻōlohelohe, hāʻawi kā mākou lawelawe ulu wafer epi waiwai i hoʻohui ʻia i nā wafers epitaxial (epi) me ka mānoanoa i kāohi paʻa ʻia (1–20 µm), nā ʻano doping, a me nā densities kīnā.
Hoʻomaʻamaʻa ʻia kēlā me kēia wafer sic a me ka wafer epi i ka nānā pono ʻana i loko o ka laina (ka nui o ka micropipe <0.1 cm⁻², ka ʻoʻoleʻa o ka ʻili Ra <0.2 nm) a me ke ʻano uila piha (CV, resistivity mapping) e hōʻoia i ka like ʻana o ke kristal a me ka hana. Inā hoʻohana ʻia no nā modula uila mana, nā amplifier RF alapine kiʻekiʻe, a i ʻole nā mea optoelectronic (LED, photodetectors), hāʻawi kā mākou laina huahana SiC substrate a me epi wafer i ka hilinaʻi, ka paʻa wela, a me ka ikaika breakdown e pono ai nā noi koi nui o kēia lā.
Nā waiwai a me ka hoʻohana ʻana o ke ʻano SiC Substrate 4H-N
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ʻAno Polytype (Hexagonal) o ka substrate 4H-N SiC
ʻO ka bandgap ākea o ~ 3.26 eV e hōʻoiaʻiʻo i ka hana uila paʻa a me ka paʻa wela ma lalo o nā kūlana wela kiʻekiʻe a me ke kahua uila kiʻekiʻe.
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ʻO ka substrate SiCʻAno-N Doping
ʻO ka hoʻohuihui naikokene i kāohi pono ʻia e hua mai i nā ʻano mea lawe mai 1 × 10¹⁶ a i 1 × 10¹⁹ cm⁻³ a me nā neʻe uila i ka mahana o ka lumi a hiki i ~ 900 cm²/V·s, e hoʻemi ana i nā pohō conduction.
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ʻO ka substrate SiCKe kū'ē ākea a me ke ʻano like
Loaʻa ka pae resistivity o 0.01–10 Ω·cm a me ka mānoanoa o ka wafer o 350–650 µm me ka ±5% hoʻomanawanui i ka doping a me ka mānoanoa—kūpono no ka hana ʻana i nā mea mana kiʻekiʻe.
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ʻO ka substrate SiCKa nui o ke kīnā haʻahaʻa loa
ʻO ka nui o ka micropipe < 0.1 cm⁻² a me ka nui o ka basal-plane dislocation < 500 cm⁻², e hāʻawi ana i ka yield hāmeʻa > 99% a me ka kūpaʻa kristal kiʻekiʻe.
- ʻO ka substrate SiCKa Hoʻokele Wela Kūikawā
ʻO ka hoʻokele wela a hiki i ~370 W/m·K e kōkua i ka wehe ʻana i ka wela me ka maikaʻi, e hoʻonui ana i ka hilinaʻi o ka hāmeʻa a me ka nui o ka mana.
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ʻO ka substrate SiCNā Polokalamu Pahuhopu
ʻO nā SiC MOSFET, nā diode Schottky, nā modula mana a me nā mea RF no nā hoʻokele kaʻa uila, nā inverters solar, nā hoʻokele ʻoihana, nā ʻōnaehana traction, a me nā mākeke uila mana koi ʻē aʻe.
Nā kikoʻī o ka wafer SiC ʻano 6 iniha 4H-N | ||
| Waiwai | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Papa | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Anawaena | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Hoʻonohonoho Wafer | Ma waho o ke axis: 4.0° i ka ʻaoʻao <1120> ± 0.5° | Ma waho o ke axis: 4.0° i ka ʻaoʻao <1120> ± 0.5° |
| Ka nui o ka micropipe | ≤ 0.2 kenimika² | ≤ 15 kenimika² |
| Ke kū'ē ʻana | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Kūlana Pālahalaha Mua | [10-10] ± 50° | [10-10] ± 50° |
| Ka Lōʻihi Palahalaha Mua | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Hoʻokaʻawale ʻana i ka lihi | 3 mm | 3 mm |
| LTV/TIV / Kakaka / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| ʻOʻoleʻa | Pōlani Ra ≤ 1 nm | Pōlani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm |
| Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 0.1% |
| Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 3% |
| Nā Hoʻokomo Kalapona ʻIke | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 5% |
| Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | Ka lōʻihi huina ≤ 1 ke anawaena wafer | |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe | ʻAʻohe mea i ʻae ʻia ≥ 0.2 mm ka laulā a me ka hohonu | 7 i ʻae ʻia, ≤ 1 mm kēlā me kēia |
| Ka Hoʻokaʻawale ʻana o ka Wili Uila | < 500 kenimika³ | < 500 kenimika³ |
| Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ||
| Ka hoʻopili ʻana | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi |
Nā kikoʻī o ka wafer SiC ʻano 8 iniha 4H-N | ||
| Waiwai | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Papa | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Anawaena | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Hoʻonohonoho Wafer | 4.0° i ka ʻaoʻao <110> ± 0.5° | 4.0° i ka ʻaoʻao <110> ± 0.5° |
| Ka nui o ka micropipe | ≤ 0.2 kenimika² | ≤ 5 kenimika² |
| Ke kū'ē ʻana | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Hoʻonohonoho Hanohano | ||
| Hoʻokaʻawale ʻana i ka lihi | 3 mm | 3 mm |
| LTV/TIV / Kakaka / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| ʻOʻoleʻa | Pōlani Ra ≤ 1 nm | Pōlani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm |
| Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 0.1% |
| Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 3% |
| Nā Hoʻokomo Kalapona ʻIke | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 5% |
| Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | Ka lōʻihi huina ≤ 1 ke anawaena wafer | |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe | ʻAʻohe mea i ʻae ʻia ≥ 0.2 mm ka laulā a me ka hohonu | 7 i ʻae ʻia, ≤ 1 mm kēlā me kēia |
| Ka Hoʻokaʻawale ʻana o ka Wili Uila | < 500 kenimika³ | < 500 kenimika³ |
| Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ||
| Ka hoʻopili ʻana | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi |
He mea hana kiʻekiʻe ka 4H-SiC i hoʻohana ʻia no nā mea uila mana, nā mea RF, a me nā noi wela kiʻekiʻe. ʻO ka "4H" e pili ana i ke ʻano kristal, he hexagonal, a ʻo ka "N" e hōʻike ana i kahi ʻano doping i hoʻohana ʻia e hoʻomaikaʻi i ka hana o ka mea.
ʻO ka4H-SiCHoʻohana pinepine ʻia ke ʻano no:
Nā Uila Mana:Hoʻohana ʻia i nā mea e like me nā diodes, MOSFET, a me IGBT no nā powertrains kaʻa uila, nā mīkini ʻoihana, a me nā ʻōnaehana ikehu hou.
ʻenehana 5G:Me ke koi ʻana o 5G no nā ʻāpana alapine kiʻekiʻe a me ka pono kiʻekiʻe, ʻo ka hiki iā SiC ke lawelawe i nā voltages kiʻekiʻe a hana i nā mahana kiʻekiʻe e kūpono ia no nā mea hoʻoikaika mana kikowaena kahua a me nā polokalamu RF.
Nā ʻōnaehana ikehu lā:He kūpono loa nā waiwai lawelawe mana maikaʻi loa o SiC no nā inverters a me nā mea hoʻololi photovoltaic (mana solar).
Nā Kaʻa Uila (EV):Hoʻohana nui ʻia ʻo SiC i nā powertrains EV no ka hoʻololi ikehu ʻoi aku ka maikaʻi, ka hana wela haʻahaʻa, a me nā mānoanoa mana kiʻekiʻe.
Nā waiwai a me ka hoʻohana ʻana o ke ʻano SiC Substrate 4H Semi-Insulating
Nā Waiwai:
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Nā ʻano hana hoʻomalu mānoanoa ʻole o ka micropipe: Hōʻoia i ka loaʻa ʻole o nā micropipes, e hoʻomaikaʻi ana i ka maikaʻi o ka substrate.
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Nā ʻano hana hoʻomalu monocrystalline: Hōʻoia i kahi ʻano kristal hoʻokahi no nā waiwai mea i hoʻonui ʻia.
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Nā ʻenehana kaohi hoʻokomo: Hoʻēmi i ke alo o nā mea haumia a i ʻole nā mea i hoʻokomo ʻia, e hōʻoia ana i kahi substrate maʻemaʻe.
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Nā ʻano hana hoʻomalu resistivity: ʻAe i ka kaohi pololei ʻana i ke kū'ē uila, he mea nui ia no ka hana o ka hāmeʻa.
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Nā ʻano hana hoʻoponopono a me ka kaohi ʻana i ka haumia: Hoʻoponopono a kaupalena i ka hoʻokomo ʻia ʻana o nā mea haumia e mālama i ka pono o ka substrate.
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Nā ʻenehana hoʻomalu laulā ʻanuʻu substrateHāʻawi i ka mana pololei ma luna o ka laulā o ke kaʻina hana, e hōʻoiaʻiʻo ana i ke kūlike ma waena o ka substrate
ʻO ke kikoʻī o ka substrate 6Inch 4H-semi SiC | ||
| Waiwai | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Anawaena (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa (um) | 500 ± 15 | 500 ± 25 |
| Hoʻonohonoho Wafer | Ma ke axis: ±0.0001° | Ma ke axis: ±0.05° |
| Ka nui o ka micropipe | ≤ 15 kenimika-2 | ≤ 15 kenimika-2 |
| Ke kū'ē ʻana (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Kūlana Pālahalaha Mua | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ka Lōʻihi Palahalaha Mua | ʻOki | ʻOki |
| Hoʻokaʻawale ʻana i ka lihi (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Kīʻaha / Warp | ≤ 3 µm | ≤ 3 µm |
| ʻOʻoleʻa | Pōlani Ra ≤ 1.5 µm | Pōlani Ra ≤ 1.5 µm |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe | ≤ 20 µm | ≤ 60 µm |
| Nā Papa Wela Ma o ke Kukui Ikaika Kiʻekiʻe | Hōʻuluʻulu ≤ 0.05% | Hōʻuluʻulu ≤ 3% |
| Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe | Nā Hoʻokomo Kalapona ʻIke ≤ 0.05% | Hōʻuluʻulu ≤ 3% |
| Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ≤ 0.05% | Hōʻuluʻulu ≤ 4% |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe (Nui) | ʻAʻole ʻae ʻia > 02 mm ka laulā a me ka hohonu | ʻAʻole ʻae ʻia > 02 mm ka laulā a me ka hohonu |
| ʻO ka hoʻonui ʻana o ka wili kōkua | ≤ 500 µm | ≤ 500 µm |
| Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Ka hoʻopili ʻana | Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi | Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi |
ʻO ke kikoʻī o ka substrate SiC 4-'īniha 4H-Semi Insulating
| Palena | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
|---|---|---|
| Nā Waiwai Kino | ||
| Anawaena | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Hoʻonohonoho Wafer | Ma ke axis: <600h > 0.5° | Ma ke axis: <000h > 0.5° |
| Nā Waiwai Uila | ||
| Ka nui o ka Micropipe (MPD) | ≤1 kenimika⁻² | ≤15 kenimika⁻² |
| Ke kū'ē ʻana | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Nā Hoʻomanawanui Geometric | ||
| Kūlana Pālahalaha Mua | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Ka Lōʻihi Palahalaha Mua | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ka Lōʻihi Pālahalaha Lua | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Kūlana Pālahalaha Lua | 90° CW mai Prime flat ± 5.0° (Si ke alo i luna) | 90° CW mai Prime flat ± 5.0° (Si ke alo i luna) |
| Hoʻokaʻawale ʻana i ka lihi | 3 mm | 3 mm |
| LTV / TTV / Kakaka / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ka maikaʻi o ka ʻili | ||
| ʻO ka ʻOʻoleʻa o ka ʻIli (Polish Ra) | ≤1 nm | ≤1 nm |
| ʻO ka ʻOʻoleʻa o ka ʻIli (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Nā Māwae Lihi (Kukui Ikaika) | ʻAʻole ʻae ʻia | Ka lōʻihi huina ≥10 mm, māwae hoʻokahi ≤2 mm |
| Nā hemahema o ka papa hexagonal | ≤0.05% wahi hōʻuluʻulu | ≤0.1% wahi hōʻuluʻulu |
| Nā Wahi Hoʻokomo Polytype | ʻAʻole ʻae ʻia | ≤1% wahi hōʻuluʻulu |
| Nā Hoʻokomo Kalapona ʻIke | ≤0.05% wahi hōʻuluʻulu | ≤1% wahi hōʻuluʻulu |
| Nā ʻōpala ʻili Silicon | ʻAʻole ʻae ʻia | ≤1 ke anawaena o ka wafer ka lōʻihi o ka huina |
| Nā ʻāpana lihi | ʻAʻohe mea i ʻae ʻia (≥0.2 mm ka laulā/hohonu) | ≤5 mau ʻāpana (ʻo kēlā me kēia ≤1 mm) |
| Ka haumia ʻana o ka ʻili Silicon | ʻAʻole i kuhikuhi ʻia | ʻAʻole i kuhikuhi ʻia |
| Ka hoʻopili ʻana | ||
| Ka hoʻopili ʻana | Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi | Kaseti wafer multi-wafer a i ʻole |
Noi:
ʻO kaNā substrates SiC 4H Semi-Insulatinghoʻohana nui ʻia i nā mea uila mana kiʻekiʻe a me ke alapine kiʻekiʻe, ʻoi aku hoʻi i kaKahua RFHe mea koʻikoʻi kēia mau substrates no nā noi like ʻole e komo pū ana menā ʻōnaehana kamaʻilio microwave, radar hoʻonohonoho pae, a menā mea ʻike uila uea ʻoleʻO ko lākou conductivity thermal kiʻekiʻe a me nā ʻano uila maikaʻi loa e kūpono ai lākou no nā noi koi i nā uila mana a me nā ʻōnaehana kamaʻilio.
Nā waiwai a me ka hoʻohana ʻana o ka SiC epi wafer 4H-N type
Nā Waiwai a me nā Noi o ka SiC 4H-N Type Epi Wafer
Nā Waiwai o ka SiC 4H-N Type Epi Wafer:
Ka Hoʻohui Mea:
SiC (Silicon Carbide)ʻIke ʻia no kona paʻakikī koʻikoʻi, ka conductivity thermal kiʻekiʻe, a me nā waiwai uila maikaʻi loa, kūpono ʻo SiC no nā mea uila hana kiʻekiʻe.
ʻAno Polytype 4H-SiCʻIke ʻia ka 4H-SiC polytype no kona pono kiʻekiʻe a me ke kūpaʻa i nā noi uila.
ʻAno-N DopingʻO ka doping ʻano-N (i hoʻohui ʻia me ka naikokene) hāʻawi i ka neʻe ʻana o ka electron maikaʻi loa, e kūpono ai ʻo SiC no nā noi alapine kiʻekiʻe a me ka mana kiʻekiʻe.
Ka Hoʻokele Wera Kiʻekiʻe:
Loaʻa i nā wafers SiC ka conductivity thermal kiʻekiʻe, maʻamau mai120–200 W/m·K, e ʻae ana iā lākou e hoʻokele pono i ka wela i nā mea hana mana kiʻekiʻe e like me nā transistors a me nā diodes.
Ka laulā ākea:
Me kahi bandgap o3.26 eV, hiki i ka 4H-SiC ke hana ma nā voltages kiʻekiʻe, nā alapine (frequencies), a me nā mahana i hoʻohālikelike ʻia me nā mea hana silicon kuʻuna, e kūpono ana no nā noi hana kiʻekiʻe a me ka pono.
Nā Waiwai Uila:
ʻO ka neʻe kiʻekiʻe o ka electron a me ka conductivity o SiC e kūpono ia nonā mea uila mana, e hāʻawi ana i nā wikiwiki hoʻololi wikiwiki a me ka hiki ke lawelawe i ke au a me ke uila kiʻekiʻe, e hopena ana i nā ʻōnaehana hoʻokele mana ʻoi aku ka maikaʻi.
Ke kū'ē ʻana i ka mīkini a me ke kemika:
ʻO SiC kekahi o nā mea paʻakikī loa, ʻo ka lua wale nō i ka daimana, a he kūpaʻa loa ia i ka oxidation a me ka corrosion, e paʻa ai i nā ʻano ʻino.
Nā noi o ka SiC 4H-N Type Epi Wafer:
Nā Uila Mana:
Hoʻohana nui ʻia nā wafers epi ʻano SiC 4H-N i lokonā MOSFET mana, Nā IGBT, a menā diodenohoʻololi manama nā ʻōnaehana e like menā mea hoʻohuli ikehu lā, nā kaʻa uila, a menā ʻōnaehana mālama ikehu, e hāʻawi ana i ka hana i hoʻonui ʻia a me ka pono o ka ikehu.
Nā Kaʻa Uila (EV):
In nā pūnaehana mana o ke kaʻa uila, nā mea hoʻokele motika, a menā kikowaena hoʻouka, kōkua nā wafers SiC i ka hoʻokō ʻana i ka pono o ka pākaukau ʻoi aku ka maikaʻi, ka hoʻouka wikiwiki ʻana, a me ka hoʻomaikaʻi ʻana i ka hana ikehu holoʻokoʻa ma muli o ko lākou hiki ke lawelawe i ka mana kiʻekiʻe a me nā mahana.
Nā ʻōnaehana ikehu hou:
Nā mea hoʻololi ikehu lāHoʻohana ʻia nā wafers SiC i lokonā ʻōnaehana ikehu lāno ka hoʻololi ʻana i ka mana DC mai nā panela solar i AC, e hoʻonui ana i ka pono holoʻokoʻa a me ka hana o ka ʻōnaehana.
Nā Turbine makaniHoʻohana ʻia ka ʻenehana SiC manā ʻōnaehana hoʻokele turbine makani, e hoʻomaikaʻi ana i ka hana mana a me ka pono o ka hoʻololi ʻana.
Aerospace a me ka Pale Kaua:
He kūpono nā wafers SiC no ka hoʻohana ʻana i lokonā mea uila mokulelea menā noi koa, menā ʻōnaehana radara menā mea uila ukali, kahi e koʻikoʻi ai ke kūpaʻa kiʻekiʻe o ka radiation a me ke kūpaʻa wela.
Nā noi wela kiʻekiʻe a me ke alapine kiʻekiʻe:
ʻOi aku ka maikaʻi o nā wafers SiCnā mea uila wela kiʻekiʻe, i hoʻohana ʻia manā ʻenekini mokulele, mokulele, a menā ʻōnaehana hoʻomehana ʻoihana, ʻoiai lākou e mālama nei i ka hana i nā kūlana wela loa. Eia kekahi, ʻo kā lākou bandgap ākea e ʻae ai i ka hoʻohana ʻana i lokonā noi alapine kiʻekiʻemakemakenā polokalamu RFa menā kamaʻilio microwave.
| ʻO ke kikoʻī axial epit ʻano N 6-'īniha | |||
| Palena | ʻāpana | Z-MOS | |
| ʻAno | Ka hoʻokele / Dopant | - | ʻAno-N / Naikokene |
| Papa Hoʻopaʻa | Mānoanoa o ka Papa Buffer | um | 1 |
| Ka hoʻomanawanui ʻana i ka mānoanoa o ka papa buffer | % | ±20% | |
| Ka Hoʻohuihui Papa Buffer | kenimika-3 | 1.00E+18 | |
| Ka hoʻomanawanui ʻana o ka papa buffer | % | ±20% | |
| Papa Epi 1 | Mānoanoa o ka Papa Epi | um | 11.5 |
| ʻAno like o ka mānoanoa o ka papa Epi | % | ±4% | |
| Ka Hoʻomanawanui Mānoanoa o nā Papa Epi ((Spec- Max, Min)/Spec) | % | ±5% | |
| Ka Hoʻohuihui ʻana o ka Papa Epi | kenimika-3 | 1E 15~ 1E 18 | |
| Ka Hoʻomanawanui ʻana o ka Papa Epi | % | 6% | |
| ʻO ke ʻano like o ka hoʻohuihui ʻana o ka papa Epi (σ /ʻano) | % | ≤5% | |
| ʻAno like o ka hoʻohuihui ʻana o ka papa Epi <(max-min)/(max+min> | % | ≤ 10% | |
| ʻAno Wafer Epitaixal | Kakaka | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Nā ʻano laulā | Ka lōʻihi o nā ʻōpala | mm | ≤30mm |
| Nā ʻāpana lihi | - | ʻAʻohe | |
| Ka wehewehe ʻana o nā hemahema | ≥97% （I ana ʻia me 2*2） ʻO nā kīnā pepehi kanaka e komo pū ana: Micropipe / Nā lua nui, Kāloti, Huinakolu | ||
| Ka haumia metala | nā ʻātoma/cm² | d f f ll i ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn, (Hg,Na,K,Ti,Ca &Mn) | |
| Pūʻolo | Nā kikoʻī hoʻopili | nā ʻāpana/pahu | kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi |
| ʻO ke kikoʻī epitaxial ʻano-N 8-'īniha | |||
| Palena | ʻāpana | Z-MOS | |
| ʻAno | Ka hoʻokele / Dopant | - | ʻAno-N / Naikokene |
| Papa hoʻopaʻa | Mānoanoa o ka Papa Buffer | um | 1 |
| Ka hoʻomanawanui ʻana i ka mānoanoa o ka papa buffer | % | ±20% | |
| Ka Hoʻohuihui Papa Buffer | kenimika-3 | 1.00E+18 | |
| Ka hoʻomanawanui ʻana o ka papa buffer | % | ±20% | |
| Papa Epi 1 | ʻAwelike Mānoanoa o nā Papa Epi | um | 8~ 12 |
| ʻAno like o ka mānoanoa o nā papa Epi (σ/awelika) | % | ≤2.0 | |
| Ka Hoʻomanawanui Mānoanoa o nā Papa Epi ((Spec -Max，Min)/Spec) | % | ±6 | |
| ʻO ka awelika o ka Doping ʻupena Epi | kenimika-3 | 8E+15 ~2E+16 | |
| ʻO ke ʻano like ʻana o ka Epi layers Net Doping (σ/mean) | % | ≤5 | |
| ʻO ka hoʻomanawanui ʻana o ka ʻupena Epi Layers ((Spec -Max， | % | ± 10.0 | |
| ʻAno Wafer Epitaixal | Mi)/S) ʻŌwiliwili | um | ≤50.0 |
| Kakaka | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Nui Nā ʻano | Nā ʻōpala | - | Ka lōʻihi o ka huina ≤ 1/2 Ke anawaena o ka wafer |
| Nā ʻāpana lihi | - | ≤2 mau ʻāpana, kēlā me kēia radius ≤1.5mm | |
| Ka haumia ʻana o nā metala ʻili | nā ʻātoma/cm2 | ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn, (Hg,Na,K,Ti,Ca &Mn) | |
| Nānā ʻana i nā hemahema | % | ≥ 96.0 (ʻO nā hemahema 2X2 e komo pū me ka Micropipe / nā lua nui, Kāloti, Nā kīnā ʻekolu, Nā hiolo ʻana, (Linear/IGSF-s, BPD) | |
| Ka haumia ʻana o nā metala ʻili | nā ʻātoma/cm2 | ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn, (Hg,Na,K,Ti,Ca &Mn) | |
| Pūʻolo | Nā kikoʻī hoʻopili | - | kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi |
Nā nīnau a me nā pane no ka wafer SiC
Q1: He aha nā pōmaikaʻi koʻikoʻi o ka hoʻohana ʻana i nā wafers SiC ma luna o nā wafers silicon kuʻuna i nā mea uila mana?
A1:
Hāʻawi nā wafers SiC i kekahi mau pono koʻikoʻi ma luna o nā wafers silicon (Si) kuʻuna i nā mea uila mana, me:
Ka Hana KiʻekiʻeʻOi aku ka laulā o ka bandgap o SiC (3.26 eV) i hoʻohālikelike ʻia me ka silicon (1.1 eV), e ʻae ana i nā mea hana e hana ma nā voltages kiʻekiʻe, nā alapine, a me nā mahana. Ke alakaʻi nei kēia i ka pohō mana haʻahaʻa a me ka pono kiʻekiʻe i nā ʻōnaehana hoʻololi mana.
Ka Hoʻokele Wera KiʻekiʻeʻOi aku ke kiʻekiʻe o ka conductivity thermal o SiC ma mua o ka silicon, e hiki ai ke hoʻokahe maikaʻi i ka wela i nā noi mana kiʻekiʻe, kahi e hoʻomaikaʻi ai i ka hilinaʻi a me ke ola o nā mea mana.
Ka lawelawe ʻana i ke au uila kiʻekiʻe a me ke auHiki i nā mea SiC ke lawelawe i nā pae voltage a me ke au kiʻekiʻe, e kūpono ai iā lākou no nā noi mana kiʻekiʻe e like me nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā hoʻokele motika ʻoihana.
Ka wikiwiki o ka hoʻololi ʻanaLoaʻa i nā mea SiC nā hiki ke hoʻololi wikiwiki, kahi e kōkua ai i ka hōʻemi ʻana i ka pohō ikehu a me ka nui o ka ʻōnaehana, e kūpono ai lākou no nā noi alapine kiʻekiʻe.
Q2: He aha nā hoʻohana nui o nā wafers SiC i ka ʻoihana kaʻa?
A2:
I ka ʻoihana kaʻa, hoʻohana nui ʻia nā wafers SiC i:
Nā Powertrains o ke Kaʻa Uila (EV): Nā ʻāpana SiC e like menā mea hoʻohulia menā MOSFET manahoʻomaikaʻi i ka pono a me ka hana o nā powertrains kaʻa uila ma ka hiki ʻana i nā wikiwiki hoʻololi wikiwiki a me ka nui o ka ikehu. ʻO kēia ke alakaʻi i ke ola pākaukau lōʻihi a me ka hana kaʻa holoʻokoʻa maikaʻi.
Nā Mea Hoʻoili ma luna o ka PapaKōkua nā mea SiC i ka hoʻomaikaʻi ʻana i ka pono o nā ʻōnaehana hoʻouka uila ma luna o ka moku ma o ka hiki ʻana i nā manawa hoʻouka wikiwiki a me ka hoʻokele wela maikaʻi, he mea koʻikoʻi ia no nā EV e kākoʻo i nā kikowaena hoʻouka uila mana kiʻekiʻe.
Nā ʻōnaehana hoʻokele pila (BMS)Hoʻomaikaʻi ka ʻenehana SiC i ka pono onā ʻōnaehana hoʻokele pila, e ʻae ana i ka hoʻoponopono uila maikaʻi ʻana, ka lawelawe mana kiʻekiʻe, a me ke ola pākaukau lōʻihi.
Nā mea hoʻololi DC-DCHoʻohana ʻia nā wafers SiC i lokoNā mea hoʻololi DC-DCe hoʻololi i ka mana DC voltage kiʻekiʻe i ka mana DC voltage haʻahaʻa me ka ʻoi aku ka maikaʻi, he mea nui ia i nā kaʻa uila e hoʻokele i ka mana mai ka pila a i nā ʻāpana like ʻole o ke kaʻa.
ʻO ka hana kiʻekiʻe o SiC i nā noi voltage kiʻekiʻe, mahana kiʻekiʻe, a me nā hana kiʻekiʻe e lilo ia i mea nui no ka hoʻololi ʻana o ka ʻoihana kaʻa i ka neʻe uila.
Nā kikoʻī o ka wafer SiC ʻano 6 iniha 4H-N | ||
| Waiwai | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Papa | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Anawaena | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Hoʻonohonoho Wafer | Ma waho o ke axis: 4.0° i ka ʻaoʻao <1120> ± 0.5° | Ma waho o ke axis: 4.0° i ka ʻaoʻao <1120> ± 0.5° |
| Ka nui o ka micropipe | ≤ 0.2 kenimika² | ≤ 15 kenimika² |
| Ke kū'ē ʻana | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Kūlana Pālahalaha Mua | [10-10] ± 50° | [10-10] ± 50° |
| Ka Lōʻihi Palahalaha Mua | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Hoʻokaʻawale ʻana i ka lihi | 3 mm | 3 mm |
| LTV/TIV / Kakaka / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| ʻOʻoleʻa | Pōlani Ra ≤ 1 nm | Pōlani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm |
| Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 0.1% |
| Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 3% |
| Nā Hoʻokomo Kalapona ʻIke | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 5% |
| Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | Ka lōʻihi huina ≤ 1 ke anawaena wafer | |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe | ʻAʻohe mea i ʻae ʻia ≥ 0.2 mm ka laulā a me ka hohonu | 7 i ʻae ʻia, ≤ 1 mm kēlā me kēia |
| Ka Hoʻokaʻawale ʻana o ka Wili Uila | < 500 kenimika³ | < 500 kenimika³ |
| Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ||
| Ka hoʻopili ʻana | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi |
Nā kikoʻī o ka wafer SiC ʻano 8 iniha 4H-N | ||
| Waiwai | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Papa | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Anawaena | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Hoʻonohonoho Wafer | 4.0° i ka ʻaoʻao <110> ± 0.5° | 4.0° i ka ʻaoʻao <110> ± 0.5° |
| Ka nui o ka micropipe | ≤ 0.2 kenimika² | ≤ 5 kenimika² |
| Ke kū'ē ʻana | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Hoʻonohonoho Hanohano | ||
| Hoʻokaʻawale ʻana i ka lihi | 3 mm | 3 mm |
| LTV/TIV / Kakaka / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| ʻOʻoleʻa | Pōlani Ra ≤ 1 nm | Pōlani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm | Ka lōʻihi huina ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm |
| Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 0.1% |
| Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 3% |
| Nā Hoʻokomo Kalapona ʻIke | ʻĀpana hōʻuluʻulu ≤ 0.05% | ʻĀpana hōʻuluʻulu ≤ 5% |
| Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | Ka lōʻihi huina ≤ 1 ke anawaena wafer | |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe | ʻAʻohe mea i ʻae ʻia ≥ 0.2 mm ka laulā a me ka hohonu | 7 i ʻae ʻia, ≤ 1 mm kēlā me kēia |
| Ka Hoʻokaʻawale ʻana o ka Wili Uila | < 500 kenimika³ | < 500 kenimika³ |
| Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ||
| Ka hoʻopili ʻana | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi |
ʻO ke kikoʻī o ka substrate 6Inch 4H-semi SiC | ||
| Waiwai | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
| Anawaena (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa (um) | 500 ± 15 | 500 ± 25 |
| Hoʻonohonoho Wafer | Ma ke axis: ±0.0001° | Ma ke axis: ±0.05° |
| Ka nui o ka micropipe | ≤ 15 kenimika-2 | ≤ 15 kenimika-2 |
| Ke kū'ē ʻana (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Kūlana Pālahalaha Mua | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ka Lōʻihi Palahalaha Mua | ʻOki | ʻOki |
| Hoʻokaʻawale ʻana i ka lihi (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Kīʻaha / Warp | ≤ 3 µm | ≤ 3 µm |
| ʻOʻoleʻa | Pōlani Ra ≤ 1.5 µm | Pōlani Ra ≤ 1.5 µm |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe | ≤ 20 µm | ≤ 60 µm |
| Nā Papa Wela Ma o ke Kukui Ikaika Kiʻekiʻe | Hōʻuluʻulu ≤ 0.05% | Hōʻuluʻulu ≤ 3% |
| Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe | Nā Hoʻokomo Kalapona ʻIke ≤ 0.05% | Hōʻuluʻulu ≤ 3% |
| Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ≤ 0.05% | Hōʻuluʻulu ≤ 4% |
| Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe (Nui) | ʻAʻole ʻae ʻia > 02 mm ka laulā a me ka hohonu | ʻAʻole ʻae ʻia > 02 mm ka laulā a me ka hohonu |
| ʻO ka hoʻonui ʻana o ka wili kōkua | ≤ 500 µm | ≤ 500 µm |
| Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Ka hoʻopili ʻana | Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi | Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi |
ʻO ke kikoʻī o ka substrate SiC 4-'īniha 4H-Semi Insulating
| Palena | Papa Hana MPD ʻOle (Pae Z) | Papa Hoʻopunipuni (Papa D) |
|---|---|---|
| Nā Waiwai Kino | ||
| Anawaena | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| ʻAno Poly | 4H | 4H |
| Mānoanoa | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Hoʻonohonoho Wafer | Ma ke axis: <600h > 0.5° | Ma ke axis: <000h > 0.5° |
| Nā Waiwai Uila | ||
| Ka nui o ka Micropipe (MPD) | ≤1 kenimika⁻² | ≤15 kenimika⁻² |
| Ke kū'ē ʻana | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Nā Hoʻomanawanui Geometric | ||
| Kūlana Pālahalaha Mua | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Ka Lōʻihi Palahalaha Mua | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ka Lōʻihi Pālahalaha Lua | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Kūlana Pālahalaha Lua | 90° CW mai Prime flat ± 5.0° (Si ke alo i luna) | 90° CW mai Prime flat ± 5.0° (Si ke alo i luna) |
| Hoʻokaʻawale ʻana i ka lihi | 3 mm | 3 mm |
| LTV / TTV / Kakaka / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ka maikaʻi o ka ʻili | ||
| ʻO ka ʻOʻoleʻa o ka ʻIli (Polish Ra) | ≤1 nm | ≤1 nm |
| ʻO ka ʻOʻoleʻa o ka ʻIli (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Nā Māwae Lihi (Kukui Ikaika) | ʻAʻole ʻae ʻia | Ka lōʻihi huina ≥10 mm, māwae hoʻokahi ≤2 mm |
| Nā hemahema o ka papa hexagonal | ≤0.05% wahi hōʻuluʻulu | ≤0.1% wahi hōʻuluʻulu |
| Nā Wahi Hoʻokomo Polytype | ʻAʻole ʻae ʻia | ≤1% wahi hōʻuluʻulu |
| Nā Hoʻokomo Kalapona ʻIke | ≤0.05% wahi hōʻuluʻulu | ≤1% wahi hōʻuluʻulu |
| Nā ʻōpala ʻili Silicon | ʻAʻole ʻae ʻia | ≤1 ke anawaena o ka wafer ka lōʻihi o ka huina |
| Nā ʻāpana lihi | ʻAʻohe mea i ʻae ʻia (≥0.2 mm ka laulā/hohonu) | ≤5 mau ʻāpana (ʻo kēlā me kēia ≤1 mm) |
| Ka haumia ʻana o ka ʻili Silicon | ʻAʻole i kuhikuhi ʻia | ʻAʻole i kuhikuhi ʻia |
| Ka hoʻopili ʻana | ||
| Ka hoʻopili ʻana | Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi | Kaseti wafer multi-wafer a i ʻole |
| ʻO ke kikoʻī axial epit ʻano N 6-'īniha | |||
| Palena | ʻāpana | Z-MOS | |
| ʻAno | Ka hoʻokele / Dopant | - | ʻAno-N / Naikokene |
| Papa Hoʻopaʻa | Mānoanoa o ka Papa Buffer | um | 1 |
| Ka hoʻomanawanui ʻana i ka mānoanoa o ka papa buffer | % | ±20% | |
| Ka Hoʻohuihui Papa Buffer | kenimika-3 | 1.00E+18 | |
| Ka hoʻomanawanui ʻana o ka papa buffer | % | ±20% | |
| Papa Epi 1 | Mānoanoa o ka Papa Epi | um | 11.5 |
| ʻAno like o ka mānoanoa o ka papa Epi | % | ±4% | |
| Ka Hoʻomanawanui Mānoanoa o nā Papa Epi ((Spec- Max, Min)/Spec) | % | ±5% | |
| Ka Hoʻohuihui ʻana o ka Papa Epi | kenimika-3 | 1E 15~ 1E 18 | |
| Ka Hoʻomanawanui ʻana o ka Papa Epi | % | 6% | |
| ʻO ke ʻano like o ka hoʻohuihui ʻana o ka papa Epi (σ /ʻano) | % | ≤5% | |
| ʻAno like o ka hoʻohuihui ʻana o ka papa Epi <(max-min)/(max+min> | % | ≤ 10% | |
| ʻAno Wafer Epitaixal | Kakaka | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Nā ʻano laulā | Ka lōʻihi o nā ʻōpala | mm | ≤30mm |
| Nā ʻāpana lihi | - | ʻAʻohe | |
| Ka wehewehe ʻana o nā hemahema | ≥97% （I ana ʻia me 2*2） ʻO nā kīnā pepehi kanaka e komo pū ana: Micropipe / Nā lua nui, Kāloti, Huinakolu | ||
| Ka haumia metala | nā ʻātoma/cm² | d f f ll i ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn, (Hg,Na,K,Ti,Ca &Mn) | |
| Pūʻolo | Nā kikoʻī hoʻopili | nā ʻāpana/pahu | kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi |
| ʻO ke kikoʻī epitaxial ʻano-N 8-'īniha | |||
| Palena | ʻāpana | Z-MOS | |
| ʻAno | Ka hoʻokele / Dopant | - | ʻAno-N / Naikokene |
| Papa hoʻopaʻa | Mānoanoa o ka Papa Buffer | um | 1 |
| Ka hoʻomanawanui ʻana i ka mānoanoa o ka papa buffer | % | ±20% | |
| Ka Hoʻohuihui Papa Buffer | kenimika-3 | 1.00E+18 | |
| Ka hoʻomanawanui ʻana o ka papa buffer | % | ±20% | |
| Papa Epi 1 | ʻAwelike Mānoanoa o nā Papa Epi | um | 8~ 12 |
| ʻAno like o ka mānoanoa o nā papa Epi (σ/awelika) | % | ≤2.0 | |
| Ka Hoʻomanawanui Mānoanoa o nā Papa Epi ((Spec -Max，Min)/Spec) | % | ±6 | |
| ʻO ka awelika o ka Doping ʻupena Epi | kenimika-3 | 8E+15 ~2E+16 | |
| ʻO ke ʻano like ʻana o ka Epi layers Net Doping (σ/mean) | % | ≤5 | |
| ʻO ka hoʻomanawanui ʻana o ka ʻupena Epi Layers ((Spec -Max， | % | ± 10.0 | |
| ʻAno Wafer Epitaixal | Mi)/S) ʻŌwiliwili | um | ≤50.0 |
| Kakaka | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Nui Nā ʻano | Nā ʻōpala | - | Ka lōʻihi o ka huina ≤ 1/2 Ke anawaena o ka wafer |
| Nā ʻāpana lihi | - | ≤2 mau ʻāpana, kēlā me kēia radius ≤1.5mm | |
| Ka haumia ʻana o nā metala ʻili | nā ʻātoma/cm2 | ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn, (Hg,Na,K,Ti,Ca &Mn) | |
| Nānā ʻana i nā hemahema | % | ≥ 96.0 (ʻO nā hemahema 2X2 e komo pū me ka Micropipe / nā lua nui, Kāloti, Nā kīnā ʻekolu, Nā hiolo ʻana, (Linear/IGSF-s, BPD) | |
| Ka haumia ʻana o nā metala ʻili | nā ʻātoma/cm2 | ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn, (Hg,Na,K,Ti,Ca &Mn) | |
| Pūʻolo | Nā kikoʻī hoʻopili | - | kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi |
Q1: He aha nā pōmaikaʻi koʻikoʻi o ka hoʻohana ʻana i nā wafers SiC ma luna o nā wafers silicon kuʻuna i nā mea uila mana?
A1:
Hāʻawi nā wafers SiC i kekahi mau pono koʻikoʻi ma luna o nā wafers silicon (Si) kuʻuna i nā mea uila mana, me:
Ka Hana KiʻekiʻeʻOi aku ka laulā o ka bandgap o SiC (3.26 eV) i hoʻohālikelike ʻia me ka silicon (1.1 eV), e ʻae ana i nā mea hana e hana ma nā voltages kiʻekiʻe, nā alapine, a me nā mahana. Ke alakaʻi nei kēia i ka pohō mana haʻahaʻa a me ka pono kiʻekiʻe i nā ʻōnaehana hoʻololi mana.
Ka Hoʻokele Wera KiʻekiʻeʻOi aku ke kiʻekiʻe o ka conductivity thermal o SiC ma mua o ka silicon, e hiki ai ke hoʻokahe maikaʻi i ka wela i nā noi mana kiʻekiʻe, kahi e hoʻomaikaʻi ai i ka hilinaʻi a me ke ola o nā mea mana.
Ka lawelawe ʻana i ke au uila kiʻekiʻe a me ke auHiki i nā mea SiC ke lawelawe i nā pae voltage a me ke au kiʻekiʻe, e kūpono ai iā lākou no nā noi mana kiʻekiʻe e like me nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā hoʻokele motika ʻoihana.
Ka wikiwiki o ka hoʻololi ʻanaLoaʻa i nā mea SiC nā hiki ke hoʻololi wikiwiki, kahi e kōkua ai i ka hōʻemi ʻana i ka pohō ikehu a me ka nui o ka ʻōnaehana, e kūpono ai lākou no nā noi alapine kiʻekiʻe.
Q2: He aha nā hoʻohana nui o nā wafers SiC i ka ʻoihana kaʻa?
A2:
I ka ʻoihana kaʻa, hoʻohana nui ʻia nā wafers SiC i:
Nā Powertrains o ke Kaʻa Uila (EV): Nā ʻāpana SiC e like menā mea hoʻohulia menā MOSFET manahoʻomaikaʻi i ka pono a me ka hana o nā powertrains kaʻa uila ma ka hiki ʻana i nā wikiwiki hoʻololi wikiwiki a me ka nui o ka ikehu. ʻO kēia ke alakaʻi i ke ola pākaukau lōʻihi a me ka hana kaʻa holoʻokoʻa maikaʻi.
Nā Mea Hoʻoili ma luna o ka PapaKōkua nā mea SiC i ka hoʻomaikaʻi ʻana i ka pono o nā ʻōnaehana hoʻouka uila ma luna o ka moku ma o ka hiki ʻana i nā manawa hoʻouka wikiwiki a me ka hoʻokele wela maikaʻi, he mea koʻikoʻi ia no nā EV e kākoʻo i nā kikowaena hoʻouka uila mana kiʻekiʻe.
Nā ʻōnaehana hoʻokele pila (BMS)Hoʻomaikaʻi ka ʻenehana SiC i ka pono onā ʻōnaehana hoʻokele pila, e ʻae ana i ka hoʻoponopono uila maikaʻi ʻana, ka lawelawe mana kiʻekiʻe, a me ke ola pākaukau lōʻihi.
Nā mea hoʻololi DC-DCHoʻohana ʻia nā wafers SiC i lokoNā mea hoʻololi DC-DCe hoʻololi i ka mana DC voltage kiʻekiʻe i ka mana DC voltage haʻahaʻa me ka ʻoi aku ka maikaʻi, he mea nui ia i nā kaʻa uila e hoʻokele i ka mana mai ka pila a i nā ʻāpana like ʻole o ke kaʻa.
ʻO ka hana kiʻekiʻe o SiC i nā noi voltage kiʻekiʻe, mahana kiʻekiʻe, a me nā hana kiʻekiʻe e lilo ia i mea nui no ka hoʻololi ʻana o ka ʻoihana kaʻa i ka neʻe uila.
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