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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer no MOS a i ʻole SBD

4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer no MOS a i ʻole SBD Kiʻi Manaʻo
  • 4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer no MOS a i ʻole SBD
  • 4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer no MOS a i ʻole SBD
  • 4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer no MOS a i ʻole SBD
  • 4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer no MOS a i ʻole SBD
  • 4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer no MOS a i ʻole SBD

ʻO ka wehewehe pōkole:

Anawaena Wafer ʻAno SiC Papa Nā noi
2-iniha 4H-N
4H-SEMI（HPSI）
6H-N
6H-P
3C-N		 Prime（Production）
Dummy
Ka noiʻi		 Ka uila uila, nā lako RF
3-iniha 4H-N
4H-SEMI（HPSI）
6H-P
3C-N		 Prime（Production）
Dummy
Ka noiʻi		 Ikehu hou, aerospace
4-iniha 4H-N
4H-SEMI（HPSI）
6H-P
3C-N		 Prime（Production）
Dummy
Ka noiʻi		 ʻO nā mīkini ʻenehana, nā noi alapine kiʻekiʻe
6-iniha 4H-N
4H-SEMI（HPSI）
6H-P
3C-N		 Prime（Production）
Dummy
Ka noiʻi		 Automotive, hoʻololi mana
8-iniha 4H-N
4H-SEMI（HPSI）		 MOS/SBD
Dummy
Ka noiʻi		 Nā kaʻa uila, nā mea RF
12-iniha 4H-N
4H-SEMI（HPSI）		 Prime（Production）
Dummy
Ka noiʻi		 Ka uila uila, nā lako RF

Nā hiʻohiʻona

N-type Detail & pakuhi

HPSI kiko'ī & palapala

Epitaxial wafer Detail & pakuhi

N&A

SiC Substrate SiC Epi-wafer pōkole

Hāʻawi mākou i kahi kōpili piha o nā substrates SiC kiʻekiʻe a me nā wafers sic i loko o nā polytypes a me nā profile doping-me 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating), a me 6H-P (p-type conductive)—i nā anawaena a pau, mai 6″ a hiki i ka 4″ a pau. 12″. Ma waho aʻe o nā substrate ʻole, hāʻawi kā mākou mau lawelawe ulu epi wafer i hoʻohui ʻia i nā wafers epitaxial (epi) me ka mānoanoa i hoʻopaʻa ʻia (1-20 µm), ka hoʻopaʻa ʻana i ka doping, a me nā density defect.

Loaʻa i kēlā me kēia wafer sic a me ka wafer epi i ka nānā ʻana i loko o ka laina (micropipe density <0.1 cm⁻², ʻeleʻele ʻili Ra <0.2 nm) a me ka hōʻike uila piha (CV, resistivity mapping) e hōʻoia i ka like ʻole o ka aniani a me ka hana. Inā hoʻohana ʻia no nā modula uila uila, nā amplifiers RF kiʻekiʻe, a i ʻole nā ​​mea hana optoelectronic (LED, photodetectors), ʻo kā mākou SiC substrate a me nā laina huahana wafer epi e hāʻawi i ka hilinaʻi, ke kūpaʻa wela, a me ka ikaika haki i koi ʻia e nā noi koi nui loa.

Nā waiwai a me ka hoʻohana ʻana o ke ʻano SiC substrate 4H-N

  • 4H-N SiC substrate Polytype (Hexagonal).

ʻO ka bandgap ākea o ~3.26 eV e hōʻoia i ka hana uila paʻa a me ka ikaika wela ma lalo o nā kūlana kiʻekiʻe a me nā kūlana kiʻekiʻe.

  • SiC substrateN-ʻano Doping

ʻO ka doping nitrogen i hoʻopaʻa pono ʻia e hāʻawi mai i nā manaʻo lawe lawe mai 1 × 10¹⁶ a i 1 × 10¹⁹ cm⁻³ a me nā neʻe electron wela o ka lumi a hiki i ~900 cm²/V·s, e hōʻemi ana i nā poho conduction.

  • SiC substrateKū'ē ākea & Kaulike

Loaʻa ka laulā resistivity o 0.01–10 Ω·cm a me ka mānoanoa wafer o 350–650 µm me ka ± 5% ka hoʻomanawanui i ka doping a me ka mānoanoa-kūpono no ka hana ʻana i nā mea mana kiʻekiʻe.

  • SiC substrateʻAiʻi-Haʻahaʻa Defect Density

Micropipe density < 0.1 cm⁻² a me basal-plane dislocation density < 500 cm⁻², e hāʻawi ana ma kahi o 99% o ka huahana a me ka ʻoi aku ka maikaʻi o ka kristal.

  • SiC substrateKūʻokoʻa Thermal Conductivity

ʻO ka hana wela wela a hiki i ~370 W/m·K e hoʻomaʻamaʻa i ka wehe ʻana i ka wela, hoʻonui i ka hilinaʻi o ka hāmeʻa a me ka nui o ka mana.

  • SiC substrateNā noi i koho ʻia

ʻO nā MOSFET SiC, nā diodes Schottky, nā modula mana a me nā mea RF no nā kaʻa uila, nā mea hoʻohuli i ka lā, nā ʻoihana ʻenehana, nā ʻōnaehana traction, a me nā mākeke uila uila koi.

6inihi 4H-N ʻano SiC wafer kikoʻī
Waiwai ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
Papa ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
Anawaena 149.5 mm - 150.0 mm 149.5 mm - 150.0 mm
ʻAno poli 4H 4H
mānoanoa 350 µm ± 15 µm 350 µm ± 25 µm
Kūlana Wafer Koi aku: 4.0° i ka <1120> ± 0.5° Koi aku: 4.0° i ka <1120> ± 0.5°
Micropipe Density ≤ 0.2 knm² ≤ 15 knm²
Kū'ē 0.015 - 0.024 Ω·cm 0.015 - 0.028 Ω·cm
Kūlana Pāha mua [10-10] ± 50° [10-10] ± 50°
Ka lōʻihi pālahalaha 475 mm ± 2.0 mm 475 mm ± 2.0 mm
Hoʻokuʻu Edge 3 mm 3 mm
LTV/TIV / Kakaka / Warp ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm
ʻoʻoleʻa Polani Ra ≤ 1 nm Polani Ra ≤ 1 nm
CMP Ra ≤ 0.2 nm ≤ 0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm
Nā Papa Hex Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 0.1%
Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 3%
Hoʻokomo ʻia ʻo Carbon Visual ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 5%
ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe Huina lōʻihi ≤ 1 wafer anawaena
Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe ʻAʻole ʻae ʻia ≥ 0.2 mm laula a me ka hohonu 7 ʻae ʻia, ≤ 1 mm kēlā me kēia
Hoʻokaʻawale ʻia ka Uila Uila < 500 knm³ < 500 knm³
ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe
Hoʻopili ʻia ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

 

8inihi 4H-N ʻano SiC wafer kikoʻī
Waiwai ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
Papa ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
Anawaena 199.5 mm - 200.0 mm 199.5 mm - 200.0 mm
ʻAno poli 4H 4H
mānoanoa 500 µm ± 25 µm 500 µm ± 25 µm
Kūlana Wafer 4.0° i ka <110> ± 0.5° 4.0° i ka <110> ± 0.5°
Micropipe Density ≤ 0.2 knm² ≤ 5 knm²
Kū'ē 0.015 - 0.025 Ω·cm 0.015 - 0.028 Ω·cm
Kūlana Aliʻi
Hoʻokuʻu Edge 3 mm 3 mm
LTV/TIV / Kakaka / Warp ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm
ʻoʻoleʻa Polani Ra ≤ 1 nm Polani Ra ≤ 1 nm
CMP Ra ≤ 0.2 nm ≤ 0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm
Nā Papa Hex Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 0.1%
Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 3%
Hoʻokomo ʻia ʻo Carbon Visual ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 5%
ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe Huina lōʻihi ≤ 1 wafer anawaena
Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe ʻAʻole ʻae ʻia ≥ 0.2 mm laula a me ka hohonu 7 ʻae ʻia, ≤ 1 mm kēlā me kēia
Hoʻokaʻawale ʻia ka Uila Uila < 500 knm³ < 500 knm³
ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe
Hoʻopili ʻia ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

 

4h-n sic wafer's application_副本

 

ʻO 4H-SiC kahi mea hana kiʻekiʻe i hoʻohana ʻia no ka uila uila, nā polokalamu RF, a me nā noi wela kiʻekiʻe. ʻO ka "4H" e pili ana i ka hana aniani, he hexagonal, a ʻo ka "N" e hōʻike ana i kahi ʻano doping i hoʻohana ʻia no ka hoʻokō ʻana i ka hana o ka mea.

ʻO ka4H-SiCHoʻohana pinepine ʻia ke ʻano no:

Mea uila uila:Hoʻohana ʻia i nā mea like me nā diodes, MOSFET, a me IGBT no nā kaʻa uila uila, nā mīkini ʻenehana, a me nā ʻōnaehana ikehu hou.
ʻenehana 5G:Me ka koi o 5G no nā ʻāpana kiʻekiʻe a me nā mea kiʻekiʻe, hiki i ka SiC ke mālama i nā volta kiʻekiʻe a hana i nā wela kiʻekiʻe e kūpono ia no nā mea hoʻonui mana base station a me nā polokalamu RF.
Nā ʻōnaehana ikehu lā:He kūpono nā waiwai hoʻokele mana maikaʻi o SiC no nā mea hoʻohuli a me nā mea hoʻololi photovoltaic (mana solar).
Nā Kaʻa Uila (EV):Hoʻohana nui ʻia ʻo SiC i nā mana EV no ka hoʻololi ʻana i ka ikehu ʻoi aku ka maikaʻi, hoʻohaʻahaʻa haʻahaʻa wela, a me ka nui o ka mana.

SiC Substrate 4H Semi-Insulating 'ano waiwai a me ka noi

Nā waiwai:

    • Nā ʻenehana hoʻopaʻa haʻahaʻa ʻole micropipe: E hōʻoia i ka nele o nā micropipes, e hoʻomaikaʻi i ka maikaʻi o ka substrate.

       

    • Nā ʻenehana hoʻomalu monocrystalline: Hōʻoiaʻiʻo i hoʻokahi hale aniani no nā waiwai waiwai i hoʻonui ʻia.

       

    • Nā ʻenehana mana hoʻohui: Hoʻemi i ka loaʻa ʻana o nā haumia a i ʻole nā ​​inclusions, e hōʻoia ana i kahi substrate maʻemaʻe.

       

    • Nā ʻenehana hoʻomalu resistivity: Hāʻawi i ka mana pololei o ka resistivity uila, he mea koʻikoʻi no ka hana ʻana o ka hāmeʻa.

       

    • Hoʻoponopono haumia a me nā ʻenehana hoʻomalu: Hoʻoponopono a hoʻopaʻa i ka hoʻokomoʻana i nā mea haumia e mālama i ka pono o ka substrate.

       

    • Nā ʻenehana hoʻomalu pae ʻanuʻu ākea: Hāʻawi i ka mana pololei ma luna o ka laula o ka ʻanuʻu, e hōʻoia ana i ka paʻa ʻana o ka substrate

 

6 ʻīniha 4H-semi SiC substrate kikoʻī
Waiwai ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
Anawaena (mm) 145 mm - 150 mm 145 mm - 150 mm
ʻAno poli 4H 4H
mānoanoa (um) 500 ± 15 500 ± 25
Kūlana Wafer Ma ke axis: ±0.0001° Ma ke axis: ±0.05°
Micropipe Density ≤ 15 knm-2 ≤ 15 knm-2
Kū'ē (Ωcm) ≥ 10E3 ≥ 10E3
Kūlana Pāha mua (0-10)° ± 5.0° (10-10)° ± 5.0°
Ka lōʻihi pālahalaha Notch Notch
Hoʻokuʻu ʻia ke kihi (mm) ≤ 2.5 µm / ≤ 15 µm ≤ 5.5 µm / ≤ 35 µm
LTV / kīʻaha / Warp ≤ 3 µm ≤ 3 µm
ʻoʻoleʻa Polani Ra ≤ 1.5 µm Polani Ra ≤ 1.5 µm
Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe ≤ 20 µm ≤ 60 µm
ʻO nā pā wela e ka māmā ikaika kiʻekiʻe Huina ≤ 0.05% Huina ≤ 3%
Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe Hoʻokomo ʻia ʻo Carbon Carbon ≤ 0.05% Huina ≤ 3%
ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe ≤ 0.05% Huina ≤ 4%
Nā Kiʻi Kiʻi Ma ka Māmā ʻImi Kiʻekiʻe (Lai) ʻAʻole ʻae ʻia > 02 mm ka laula a me ka hohonu ʻAʻole ʻae ʻia > 02 mm ka laula a me ka hohonu
ʻO ka hoʻomāhuahua ʻana o ka Screw kōkua ≤ 500 µm ≤ 500 µm
ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe ≤ 1 x 10^5 ≤ 1 x 10^5
Hoʻopili ʻia ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

4-Inch 4H-Semi Insulating SiC Substrate Specification

ʻĀpana ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
Na Waiwai Kino
Anawaena 99.5 mm – 100.0 mm 99.5 mm – 100.0 mm
ʻAno poli 4H 4H
mānoanoa 500 μm ± 15 μm 500 μm ± 25 μm
Kūlana Wafer Ma ke axis: <600h > 0.5° Ma ke axis: <000h > 0.5°
Na Waiwai Uila
ʻOiʻa Micropipe (MPD) ≤1 knm⁻² ≤15 knm⁻²
Kū'ē ≥150 Ω·cm ≥1.5 Ω·cm
Nā hoʻomanawanui Geometric
Kūlana Pāha mua (0x10) ± 5.0° (0x10) ± 5.0°
Ka lōʻihi pālahalaha 52.5 mm ± 2.0 mm 52.5 mm ± 2.0 mm
Ka lōʻihi pālahalaha lua 18.0 mm ± 2.0 mm 18.0 mm ± 2.0 mm
Kūlana Pāpā lua 90° CW mai Prime flat ± 5.0° (Si alo i luna) 90° CW mai Prime flat ± 5.0° (Si alo i luna)
Hoʻokuʻu Edge 3 mm 3 mm
LTV / TTV / Kakaka / Warp ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
ʻAno ʻili
ʻO ʻAla ʻili (Polani Ra) ≤1 nm ≤1 nm
ʻO ka ʻākeke o ka ʻili (CMP Ra) ≤0.2 nm ≤0.2 nm
Nā māwae ʻaoʻao (māmā Kiʻekiʻe) ʻAʻole ʻae ʻia ʻO ka lōʻihi kumulative ≥10 mm, hoʻokahi māwae ≤2 mm
Nā hemahema o ka pā hexagonal ≤0.05% wahi hui ≤0.1% ʻāpana hui
Nā Wahi Hoʻokomo Polytype ʻAʻole ʻae ʻia ≤1% ʻāpana hui
Hoʻokomo ʻia ʻo Carbon Visual ≤0.05% wahi hui ≤1% ʻāpana hui
Nā ʻili ʻili Silika ʻAʻole ʻae ʻia ≤1 wafer anawaena kumulative loa
ʻOpeʻa Kiki ʻAʻole ʻae ʻia (≥0.2 mm laula/hohonu) ≤5 mau ʻāpana (kekahi ≤1 mm)
ʻO ka hoʻohaumia ʻana o ka ʻili Silika ʻAʻole i kuhikuhi ʻia ʻAʻole i kuhikuhi ʻia
Hoʻopili ʻia
Hoʻopili ʻia ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi ʻO ka cassette multi-wafer a i ʻole


Noi:

ʻO kaSiC 4H Semi-Insulating substrateshoʻohana nui ʻia i nā mea uila uila kiʻekiʻe a me nā alapine kiʻekiʻe, ʻoi aku ka nui o kakahua RF. He mea koʻikoʻi kēia mau substrate no nā noi like ʻoleʻōnaehana kamaʻilio microwave, radar lāʻau i hoʻonohonoho ʻia, amea ʻike uila uila. ʻO kā lākou mau hiʻohiʻona wela kiʻekiʻe a me nā hiʻohiʻona uila maikaʻi loa e kūpono iā lākou no ke koi ʻana i nā noi i ka uila uila a me nā ʻōnaehana kamaʻilio.

HPSI sic wafer-application_副本

 

SiC epi wafer 4H-N 'ano waiwai a me ka noi

ʻO SiC 4H-N ʻAno Epi Wafer Pono a me nā noi

 

Nā waiwai o SiC 4H-N Type Epi Wafer:

 

Huina Mea:

SiC (Silicon Carbide): ʻIke ʻia no kona paʻakikī koʻikoʻi, ka hoʻoili wela kiʻekiʻe, a me nā waiwai uila maikaʻi loa, kūpono ʻo SiC no nā mea uila hana kiʻekiʻe.
4H-SiC Polytype: Uaʻikeʻia ka polytype 4H-SiC no kona kūlana kiʻekiʻe a paʻa i nā polokalamu uila.
N-ʻano Doping: N-type doping (doped with nitrogen) hāʻawi i ka mobility electron maikaʻi loa, e kūpono ana iā SiC no nā noi kiʻekiʻe a me ka mana kiʻekiʻe.

 

 

Kiʻekiʻe Thermal Conductivity:

Loaʻa i nā wafers SiC ka conductivity thermal maikaʻi, maʻamau mai120–200 W/m·K, e ʻae iā lākou e hoʻokele pono i ka wela i nā mea mana kiʻekiʻe e like me nā transistors a me nā diodes.

ʻAkea Bandgap:

Me kahi bandgap o3.26 eV, Hiki i ka 4H-SiC ke hana i nā voltages kiʻekiʻe, nā alapine, a me nā mahana i hoʻohālikelikeʻia me nā mea hana maʻamau i hoʻokumuʻia i ka silicon, i mea e kūpono ai no ka hana kiʻekiʻe, kiʻekiʻe.

 

Nā Pono Uila:

ʻO ka mobility electron kiʻekiʻe a me ka conductivity o SiC i kūpono nouila uila, e hāʻawi ana i nā wikiwiki hoʻololi wikiwiki a me ka mana kiʻekiʻe o kēia manawa a me ka mana hoʻokele uila, e hopena i nā ʻōnaehana hoʻokele mana.

 

 

Kū'ē Mechanical a Kemika:

ʻO SiC kekahi o nā mea paʻakikī, ʻelua wale nō i ke daimana, a kūpaʻa loa i ka oxidation a me ka corrosion, e paʻa ai i nā kaiapuni paʻakikī.

 

 

Nā noi o SiC 4H-N Type Epi Wafer:

 

Mea uila uila:

Hoʻohana nui ʻia nā wafers epi ʻano SiC 4H-N mamana MOSFET, Nā IGBT, adiodesno ka meahoohuli manai nā ʻōnaehana e like menā mea hoʻohuli lā, nā kaʻa uila, aʻōnaehana mālama ikehu, hāʻawi i ka hana i hoʻonui ʻia a me ka ikaika o ka ikehu.

 

Nā Kaʻa Uila (EV):

In kaʻa uila powertrains, nā mea hoʻokele kaʻa, anā kahua hoʻouka, Kōkua ʻo SiC wafers e hoʻokō i ka ʻoi aku ka maikaʻi o ka pākaukau, ka hoʻopiʻi wikiwiki ʻana, a me ka hoʻomaikaʻi ʻana i ka hana ikehu holoʻokoʻa ma muli o ko lākou hiki ke mālama i ka mana kiʻekiʻe a me nā mahana.

Pūnaehana ikehu hou:

Nā mea hoʻohuli lā: Hoʻohana ʻia nā wafers SiC maʻōnaehana ikehu lāno ka hoʻololi ʻana i ka mana DC mai nā panela solar i AC, e hoʻonui ana i ka pono o ka ʻōnaehana holoʻokoʻa a me ka hana.
Nā Hulihu makani: Hoʻohana ʻia ka ʻenehana SiC maʻōnaehana hoʻokele makani, e hoʻonui ana i ka hana mana a me ka hoʻololi ʻana.

Aerospace a me ka pale:

He kūpono nā wafers SiC no ka hoʻohana ʻana mamea uila uilaapalapala noi koa, meʻōnaehana radarauila uila, kahi mea koʻikoʻi ka pale ʻana i ka radiation kiʻekiʻe a me ke kūpaʻa wela.

 

 

Nā noi no ka wela a me ke alapine kiʻekiʻe:

ʻOi aku ka maikaʻi o nā wafers SiCkiʻekiʻe-mehana uila, hoʻohana ʻia manā ʻenekini mokulele, mokulele mokulele, aʻōnaehana hoʻomehana ʻoihana, ke mālama nei lākou i ka hana ma nā kūlana wela loa. Eia kekahi, hiki i kā lākou bandgap ākea ke hoʻohana i lokonā noi alapine kiʻekiʻelikeNā lako RFakamaʻilio microwave.

 

 

6-inihi N-type epit axial kiko'ī
ʻĀpana hui Z-MOS
ʻAno Condutivity / Dopant - ʻAno N / Nitrogen
Papa Hoʻopaʻa Mānoanoa Papa Hoʻopaʻa um 1
Hoʻomanawanui Mānoanoa Layer % ±20%
Hoʻopaʻa Layer Concentration knm-3 1.00E+18
ʻO ka hoʻomanawanui hoʻopaʻa paʻa % ±20%
1st Epi Layer Ka Manoanoa Epi um 11.5
Kaulike Mānoanoa Epi Layer % ± 4%
Epi Layers Thickness Tolerance((Spec-
Max ，Min)/Spec)		 % ±5%
Epi Layer Concentration knm-3 1E 15~ 1E 18
Epi Layer Concentration Tolerance % 6%
Epi Layer Concentration Uniformity (σ
/mean)		 % ≤5%
Epi Layer Concentrate Uniformity
<(max-min)/(max+min>		 % ≤ 10%
ʻAno Wafer Epitaixal Kakaka um ≤±20
WARP um ≤30
TTV um ≤ 10
LTV um ≤2
Nā ʻano nui ʻAka lōʻihi mm ≤30mm
ʻOpeʻa Kiki - AOLE
wehewehe hemahema ≥97%
（Ana me 2*2，
Hoʻokomo nā hemahema pepehi: Aia nā hemahema
Micropipe /Nā lua nui, Carrot, Triangular
Hoʻohaumia metala nā ʻātoma/cm² d f f ll i
≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
Hg,Na,K, Ti, Ca &Mn)
Pūʻolo Hoʻopili kikoʻī pcs / pahu cassette multi-wafer a i ʻole pahu wafer hoʻokahi

 

 

 

 

8-inihi N-type epitaxial kiko'ī
ʻĀpana hui Z-MOS
ʻAno Condutivity / Dopant - ʻAno N / Nitrogen
Papa pale Mānoanoa Papa Hoʻopaʻa um 1
Hoʻomanawanui Mānoanoa Layer % ±20%
Hoʻopaʻa Layer Concentration knm-3 1.00E+18
ʻO ka hoʻomanawanui hoʻopaʻa paʻa % ±20%
1st Epi Layer ʻAwelika mānoanoa o nā ʻāpana Epi um 8~ 12
Kaulike mānoanoa o nā ʻāpana Epi (σ/mean) % ≤2.0
ʻO ka hoʻomanawanui mānoanoa o ka Epi ((Spec -Max，Min)/Spec) % ±6
Epi Layers Net Average Doping knm-3 8E+15 ~2E+16
ʻO ka hoʻolikelike ʻana o nā ʻāpana Epi (σ/mean) % ≤5
Epi Layers Net DopingTolerance((Spec -Max， % ± 10.0
ʻAno Wafer Epitaixal Mi )/S )
Warp		 um ≤50.0
Kakaka um ± 30.0
TTV um ≤ 10.0
LTV um ≤4.0 (10mm×10mm)
Generala
Nā hiʻohiʻona		 Nā ʻōpala - Ka lōʻihi huila≤ 1/2Wafer anawaena
ʻOpeʻa Kiki - ≤2 chips, kēlā me kēia radius≤1.5mm
Hoʻohaumia i nā metala ʻili nā ʻātoma/cm2 ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
Hg,Na,K, Ti, Ca &Mn)
Nānā hemahema % ≥ 96.0
(2X2 Defects me Micropipe /Nā lua nui,
Kāroti, nā hemahema triangular, hāʻule iho,
Linear/IGSF-s, BPD)
Hoʻohaumia i nā metala ʻili nā ʻātoma/cm2 ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
Hg,Na,K, Ti, Ca &Mn)
Pūʻolo Hoʻopili kikoʻī - cassette multi-wafer a i ʻole pahu wafer hoʻokahi

 

 

 

 

Nīnau a SiC wafer

Q1: He aha nā pōmaikaʻi nui o ka hoʻohana ʻana i nā wafers SiC ma mua o nā wafer silicon kahiko i ka uila uila?

A1:
Hāʻawi nā wafers SiC i nā pono koʻikoʻi ma mua o nā wafers silicon (Si) maʻamau i ka uila uila, me:

ʻOi aku ka maikaʻi: Loaʻa iā SiC kahi bandgap ākea (3.26 eV) i hoʻohālikelike ʻia me ka silicon (1.1 eV), e ʻae ana i nā hāmeʻa e hana i nā voltage kiʻekiʻe, nā alapine, a me nā mahana. Ke alakaʻi nei kēia i ka haʻahaʻa haʻahaʻa o ka mana a me ka ʻoi aku ka maikaʻi o nā ʻōnaehana hoʻololi mana.
Kiʻekiʻe Thermal Conductivity: ʻOi aku ka kiʻekiʻe o ka hoʻoili wela o SiC ma mua o ka silika, e hiki ai i ka hoʻokuʻu ʻana i ka wela ma nā noi mana kiʻekiʻe, e hoʻomaikaʻi ai i ka hilinaʻi a me ke ola o nā mea mana.
ʻOi aku ka Voltage a me ka lawelawe ʻana i kēia manawa: Hiki i nā mea SiC ke mālama i nā volta kiʻekiʻe a me nā pae o kēia manawa, e kūpono ana iā lākou no nā noi mana kiʻekiʻe e like me nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā kaʻa kaʻa ʻoihana.
ʻOi aku ka wikiwiki o ka hoʻololi ʻana: Loaʻa i nā mea SiC nā mea hiki ke hoʻololi wikiwiki, e kōkua ana i ka hōʻemi ʻana i ka nalowale o ka ikehu a me ka nui o ka ʻōnaehana, e hoʻolilo iā lākou i mea kūpono no nā noi kiʻekiʻe.

 

Q2: He aha nā noi nui o nā wafers SiC i ka ʻoihana kaʻa?

A2:
I ka ʻoihana kaʻa, hoʻohana nui ʻia nā wafers SiC i:

Nā Kaʻa Uila (EV).: Nā ʻāpana pili i ka SiC likenā mea hoʻohuliamana MOSFEThoʻomaikaʻi i ka maikaʻi a me ka hana o nā kaʻa uila uila ma o ka hoʻololi ʻana i ka wikiwiki a me ka nui o ka ikehu kiʻekiʻe. Ke alakaʻi nei kēia i ka lōʻihi o ke ola pākaukau a ʻoi aku ka maikaʻi o ka hana kaʻa holoʻokoʻa.
Nā Luna Hoʻokele Papa: Kōkua ʻo SiC i ka hoʻomaikaʻi ʻana i ka pono o nā ʻōnaehana hoʻouka ma luna o ka papa ma o ka hiki ʻana i nā manawa hoʻopiʻi wikiwiki a me ka hoʻokele wela ʻoi aku ka maikaʻi, ʻo ia ka mea koʻikoʻi no nā EV e kākoʻo i nā kikowaena mana kiʻekiʻe.
Pūnaehana hoʻokele pākaukau (BMS): Hoʻonui ka ʻenehana SiC i ka pono oʻōnaehana hoʻokele pākaukau, e ʻae ana i ka hoʻoponopono uila ʻoi aku ka maikaʻi, ka mālama ʻana i ka mana kiʻekiʻe, a me ke ola pākaukau lōʻihi.
Nā mea hoʻololi DC-DC: Hoʻohana ʻia nā wafers SiC maNā mea hoʻololi DC-DCe hoʻololi i ka mana DC kiʻekiʻe-voltage i ka mana DC haʻahaʻa haʻahaʻa i ʻoi aku ka maikaʻi, ʻo ia ka mea koʻikoʻi i nā kaʻa uila e hoʻokele i ka mana mai ka pā a hiki i nā ʻāpana like ʻole o ke kaʻa.
ʻO ka hana maikaʻi loa o SiC i nā noi kiʻekiʻe-voltage, kiʻekiʻe-mehana, a me ka hana kiʻekiʻe e pono ai no ka hoʻololi ʻana o ka ʻoihana kaʻa i ka neʻe uila.

 

  • Mua:
  • Aʻe:

    • 6inihi 4H-N ʻano SiC wafer kikoʻī
    Waiwai ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
    Papa ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
    Anawaena 149.5 mm – 150.0 mm 149.5 mm – 150.0 mm
    ʻAno poli 4H 4H
    mānoanoa 350 µm ± 15 µm 350 µm ± 25 µm
    Kūlana Wafer Koi aku: 4.0° i ka <1120> ± 0.5° Koi aku: 4.0° i ka <1120> ± 0.5°
    Micropipe Density ≤ 0.2 knm² ≤ 15 knm²
    Kū'ē 0.015 – 0.024 Ω·cm 0.015 – 0.028 Ω·cm
    Kūlana Pāha mua [10-10] ± 50° [10-10] ± 50°
    Ka lōʻihi pālahalaha 475 mm ± 2.0 mm 475 mm ± 2.0 mm
    Hoʻokuʻu Edge 3 mm 3 mm
    LTV/TIV / Kakaka / Warp ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm
    ʻoʻoleʻa Polani Ra ≤ 1 nm Polani Ra ≤ 1 nm
    CMP Ra ≤ 0.2 nm ≤ 0.5 nm
    Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm
    Nā Papa Hex Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 0.1%
    Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 3%
    Hoʻokomo ʻia ʻo Carbon Visual ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 5%
    ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe Huina lōʻihi ≤ 1 wafer anawaena
    Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe ʻAʻole ʻae ʻia ≥ 0.2 mm laula a me ka hohonu 7 ʻae ʻia, ≤ 1 mm kēlā me kēia
    Hoʻokaʻawale ʻia ka Uila Uila < 500 knm³ < 500 knm³
    ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe
    Hoʻopili ʻia ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

     

    8inihi 4H-N ʻano SiC wafer kikoʻī
    Waiwai ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
    Papa ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
    Anawaena 199.5 mm – 200.0 mm 199.5 mm – 200.0 mm
    ʻAno poli 4H 4H
    mānoanoa 500 µm ± 25 µm 500 µm ± 25 µm
    Kūlana Wafer 4.0° i ka <110> ± 0.5° 4.0° i ka <110> ± 0.5°
    Micropipe Density ≤ 0.2 knm² ≤ 5 knm²
    Kū'ē 0.015 – 0.025 Ω·cm 0.015 – 0.028 Ω·cm
    Kūlana Aliʻi
    Hoʻokuʻu Edge 3 mm 3 mm
    LTV/TIV / Kakaka / Warp ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm
    ʻoʻoleʻa Polani Ra ≤ 1 nm Polani Ra ≤ 1 nm
    CMP Ra ≤ 0.2 nm ≤ 0.5 nm
    Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm ʻO ka lōʻihi hui ≤ 20 mm ka lōʻihi hoʻokahi ≤ 2 mm
    Nā Papa Hex Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 0.1%
    Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 3%
    Hoʻokomo ʻia ʻo Carbon Visual ʻĀpana hui ≤ 0.05% ʻĀpana hui ≤ 5%
    ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe Huina lōʻihi ≤ 1 wafer anawaena
    Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe ʻAʻole ʻae ʻia ≥ 0.2 mm laula a me ka hohonu 7 ʻae ʻia, ≤ 1 mm kēlā me kēia
    Hoʻokaʻawale ʻia ka Uila Uila < 500 knm³ < 500 knm³
    ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe
    Hoʻopili ʻia ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

    6 ʻīniha 4H-semi SiC substrate kikoʻī
    Waiwai ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
    Anawaena (mm) 145 mm - 150 mm 145 mm - 150 mm
    ʻAno poli 4H 4H
    mānoanoa (um) 500 ± 15 500 ± 25
    Kūlana Wafer Ma ke axis: ±0.0001° Ma ke axis: ±0.05°
    Micropipe Density ≤ 15 knm-2 ≤ 15 knm-2
    Kū'ē (Ωcm) ≥ 10E3 ≥ 10E3
    Kūlana Pāha mua (0-10)° ± 5.0° (10-10)° ± 5.0°
    Ka lōʻihi pālahalaha Notch Notch
    Hoʻokuʻu ʻia ke kihi (mm) ≤ 2.5 µm / ≤ 15 µm ≤ 5.5 µm / ≤ 35 µm
    LTV / kīʻaha / Warp ≤ 3 µm ≤ 3 µm
    ʻoʻoleʻa Polani Ra ≤ 1.5 µm Polani Ra ≤ 1.5 µm
    Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe ≤ 20 µm ≤ 60 µm
    ʻO nā pā wela e ka māmā ikaika kiʻekiʻe Huina ≤ 0.05% Huina ≤ 3%
    Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe Hoʻokomo ʻia ʻo Carbon Carbon ≤ 0.05% Huina ≤ 3%
    ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe ≤ 0.05% Huina ≤ 4%
    Nā Kiʻi Kiʻi Ma ka Māmā ʻImi Kiʻekiʻe (Lai) ʻAʻole ʻae ʻia > 02 mm ka laula a me ka hohonu ʻAʻole ʻae ʻia > 02 mm ka laula a me ka hohonu
    ʻO ka hoʻomāhuahua ʻana o ka Screw kōkua ≤ 500 µm ≤ 500 µm
    ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe ≤ 1 x 10^5 ≤ 1 x 10^5
    Hoʻopili ʻia ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

     

    4-Inch 4H-Semi Insulating SiC Substrate Specification

    ʻĀpana ʻAʻohe papa hana MPD (Z Grade) Papa Dummy (Papa D)
    Na Waiwai Kino
    Anawaena 99.5 mm – 100.0 mm 99.5 mm – 100.0 mm
    ʻAno poli 4H 4H
    mānoanoa 500 μm ± 15 μm 500 μm ± 25 μm
    Kūlana Wafer Ma ke axis: <600h > 0.5° Ma ke axis: <000h > 0.5°
    Na Waiwai Uila
    ʻOiʻa Micropipe (MPD) ≤1 knm⁻² ≤15 knm⁻²
    Kū'ē ≥150 Ω·cm ≥1.5 Ω·cm
    Nā hoʻomanawanui Geometric
    Kūlana Pāha mua (0×10) ± 5.0° (0×10) ± 5.0°
    Ka lōʻihi pālahalaha 52.5 mm ± 2.0 mm 52.5 mm ± 2.0 mm
    Ka lōʻihi pālahalaha lua 18.0 mm ± 2.0 mm 18.0 mm ± 2.0 mm
    Kūlana Pāpā lua 90° CW mai Prime flat ± 5.0° (Si alo i luna) 90° CW mai Prime flat ± 5.0° (Si alo i luna)
    Hoʻokuʻu Edge 3 mm 3 mm
    LTV / TTV / Kakaka / Warp ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
    ʻAno ʻili
    ʻO ʻAla ʻili (Polani Ra) ≤1 nm ≤1 nm
    ʻO ka ʻākeke o ka ʻili (CMP Ra) ≤0.2 nm ≤0.2 nm
    Nā māwae ʻaoʻao (māmā Kiʻekiʻe) ʻAʻole ʻae ʻia ʻO ka lōʻihi kumulative ≥10 mm, hoʻokahi māwae ≤2 mm
    Nā hemahema o ka pā hexagonal ≤0.05% wahi hui ≤0.1% ʻāpana hui
    Nā Wahi Hoʻokomo Polytype ʻAʻole ʻae ʻia ≤1% ʻāpana hui
    Hoʻokomo ʻia ʻo Carbon Visual ≤0.05% wahi hui ≤1% ʻāpana hui
    Nā ʻili ʻili Silika ʻAʻole ʻae ʻia ≤1 wafer anawaena kumulative loa
    ʻOpeʻa Kiki ʻAʻole ʻae ʻia (≥0.2 mm laula/hohonu) ≤5 mau ʻāpana (kekahi ≤1 mm)
    ʻO ka hoʻohaumia ʻana o ka ʻili Silika ʻAʻole i kuhikuhi ʻia ʻAʻole i kuhikuhi ʻia
    Hoʻopili ʻia
    Hoʻopili ʻia ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi ʻO ka cassette multi-wafer a i ʻole

     

    6-inihi N-type epit axial kiko'ī
    ʻĀpana hui Z-MOS
    ʻAno Condutivity / Dopant - ʻAno N / Nitrogen
    Papa Hoʻopaʻa Mānoanoa Papa Hoʻopaʻa um 1
    Hoʻomanawanui Mānoanoa Layer % ±20%
    Hoʻopaʻa Layer Concentration knm-3 1.00E+18
    ʻO ka hoʻomanawanui hoʻopaʻa paʻa % ±20%
    1st Epi Layer Ka Manoanoa Epi um 11.5
    Kaulike Mānoanoa Epi Layer % ± 4%
    Epi Layers Thickness Tolerance((Spec-
    Max ，Min)/Spec)    		 % ±5%
    Epi Layer Concentration knm-3 1E 15~ 1E 18
    Epi Layer Concentration Tolerance % 6%
    Epi Layer Concentration Uniformity (σ
    /mean)    		 % ≤5%
    Epi Layer Concentrate Uniformity
    <(max-min)/(max+min>    		 % ≤ 10%
    ʻAno Wafer Epitaixal Kakaka um ≤±20
    WARP um ≤30
    TTV um ≤ 10
    LTV um ≤2
    Nā ʻano nui ʻAka lōʻihi mm ≤30mm
    ʻOpeʻa Kiki - AOLE
    wehewehe hemahema ≥97%
    （Ana me 2*2，
    Hoʻokomo nā hemahema pepehi: Aia nā hemahema
    Micropipe /Nā lua nui, Carrot, Triangular
    Hoʻohaumia metala nā ʻātoma/cm² d f f ll i
    ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
    Hg,Na,K, Ti, Ca &Mn)
    Pūʻolo Hoʻopili kikoʻī pcs / pahu cassette multi-wafer a i ʻole pahu wafer hoʻokahi

     

    8-inihi N-type epitaxial kiko'ī
    ʻĀpana hui Z-MOS
    ʻAno Condutivity / Dopant - ʻAno N / Nitrogen
    Papa pale Mānoanoa Papa Hoʻopaʻa um 1
    Hoʻomanawanui Mānoanoa Layer % ±20%
    Hoʻopaʻa Layer Concentration knm-3 1.00E+18
    ʻO ka hoʻomanawanui hoʻopaʻa paʻa % ±20%
    1st Epi Layer ʻAwelika mānoanoa o nā ʻāpana Epi um 8~ 12
    Kaulike mānoanoa o nā ʻāpana Epi (σ/mean) % ≤2.0
    ʻO ka hoʻomanawanui mānoanoa o ka Epi ((Spec -Max，Min)/Spec) % ±6
    Epi Layers Net Average Doping knm-3 8E+15 ~2E+16
    ʻO ka hoʻolikelike ʻana o nā ʻāpana Epi (σ/mean) % ≤5
    Epi Layers Net DopingTolerance((Spec -Max， % ± 10.0
    ʻAno Wafer Epitaixal Mi )/S )
    Warp    		 um ≤50.0
    Kakaka um ± 30.0
    TTV um ≤ 10.0
    LTV um ≤4.0 (10mm×10mm)
    Generala
    Nā hiʻohiʻona    		 Nā ʻōpala - Ka lōʻihi huila≤ 1/2Wafer anawaena
    ʻOpeʻa Kiki - ≤2 chips, kēlā me kēia radius≤1.5mm
    Hoʻohaumia i nā metala ʻili nā ʻātoma/cm2 ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
    Hg,Na,K, Ti, Ca &Mn)
    Nānā hemahema % ≥ 96.0
    (2X2 Defects me Micropipe /Nā lua nui,
    Kāroti, nā hemahema triangular, hāʻule iho,
    Linear/IGSF-s, BPD)
    Hoʻohaumia i nā metala ʻili nā ʻātoma/cm2 ≤5E10 ʻātoma/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
    Hg,Na,K, Ti, Ca &Mn)
    Pūʻolo Hoʻopili kikoʻī - cassette multi-wafer a i ʻole pahu wafer hoʻokahi

    Q1: He aha nā pōmaikaʻi nui o ka hoʻohana ʻana i nā wafers SiC ma mua o nā wafer silicon kahiko i ka uila uila?

    A1:
    Hāʻawi nā wafers SiC i nā pono koʻikoʻi ma mua o nā wafers silicon (Si) maʻamau i ka uila uila, me:

    ʻOi aku ka maikaʻi: Loaʻa iā SiC kahi bandgap ākea (3.26 eV) i hoʻohālikelike ʻia me ka silicon (1.1 eV), e ʻae ana i nā hāmeʻa e hana i nā voltage kiʻekiʻe, nā alapine, a me nā mahana. Ke alakaʻi nei kēia i ka haʻahaʻa haʻahaʻa o ka mana a me ka ʻoi aku ka maikaʻi o nā ʻōnaehana hoʻololi mana.
    Kiʻekiʻe Thermal Conductivity: ʻOi aku ka kiʻekiʻe o ka hoʻoili wela o SiC ma mua o ka silika, e hiki ai i ka hoʻokuʻu ʻana i ka wela ma nā noi mana kiʻekiʻe, e hoʻomaikaʻi ai i ka hilinaʻi a me ke ola o nā mea mana.
    ʻOi aku ka Voltage a me ka lawelawe ʻana i kēia manawa: Hiki i nā mea SiC ke mālama i nā volta kiʻekiʻe a me nā pae o kēia manawa, e kūpono ana iā lākou no nā noi mana kiʻekiʻe e like me nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā kaʻa kaʻa ʻoihana.
    ʻOi aku ka wikiwiki o ka hoʻololi ʻana: Loaʻa i nā mea SiC nā mea hiki ke hoʻololi wikiwiki, e kōkua ana i ka hōʻemi ʻana i ka nalowale o ka ikehu a me ka nui o ka ʻōnaehana, e hoʻolilo iā lākou i mea kūpono no nā noi kiʻekiʻe.

     

     

    Q2: He aha nā noi nui o nā wafers SiC i ka ʻoihana kaʻa?

    A2:
    I ka ʻoihana kaʻa, hoʻohana nui ʻia nā wafers SiC i:

    Nā Kaʻa Uila (EV).: Nā ʻāpana pili i ka SiC likenā mea hoʻohuliamana MOSFEThoʻomaikaʻi i ka maikaʻi a me ka hana o nā kaʻa uila uila ma o ka hoʻololi ʻana i ka wikiwiki a me ka nui o ka ikehu kiʻekiʻe. Ke alakaʻi nei kēia i ka lōʻihi o ke ola pākaukau a ʻoi aku ka maikaʻi o ka hana kaʻa holoʻokoʻa.
    Nā Luna Hoʻokele Papa: Kōkua ʻo SiC i ka hoʻomaikaʻi ʻana i ka pono o nā ʻōnaehana hoʻouka ma luna o ka papa ma o ka hiki ʻana i nā manawa hoʻopiʻi wikiwiki a me ka hoʻokele wela ʻoi aku ka maikaʻi, ʻo ia ka mea koʻikoʻi no nā EV e kākoʻo i nā kikowaena mana kiʻekiʻe.
    Pūnaehana hoʻokele pākaukau (BMS): Hoʻonui ka ʻenehana SiC i ka pono oʻōnaehana hoʻokele pākaukau, e ʻae ana i ka hoʻoponopono uila ʻoi aku ka maikaʻi, ka mālama ʻana i ka mana kiʻekiʻe, a me ke ola pākaukau lōʻihi.
    Nā mea hoʻololi DC-DC: Hoʻohana ʻia nā wafers SiC maNā mea hoʻololi DC-DCe hoʻololi i ka mana DC kiʻekiʻe-voltage i ka mana DC haʻahaʻa haʻahaʻa i ʻoi aku ka maikaʻi, ʻo ia ka mea koʻikoʻi i nā kaʻa uila e hoʻokele i ka mana mai ka pā a hiki i nā ʻāpana like ʻole o ke kaʻa.
    ʻO ka hana maikaʻi loa o SiC i nā noi kiʻekiʻe-voltage, kiʻekiʻe-mehana, a me ka hana kiʻekiʻe e pono ai no ka hoʻololi ʻana o ka ʻoihana kaʻa i ka neʻe uila.

     

     

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