SiCOI wafer 4inihi 6inihi HPSI SiC SiO2 Si subatrate kūkulu

ʻO ka wehewehe pōkole:

Hōʻike kēia pepa i kahi kikoʻī kikoʻī o nā wafers Silicon Carbide-on-Insulator (SiCOI), e kālele pono ana i nā substrates 4-inch a me 6-inch me nā papa kiʻekiʻe semi-insulating (HPSI) silicon carbide (SiC) i hoʻopaʻa ʻia i ka silicon dioxide (SiO₂) insulating substrates. Hoʻohui ka ʻōnaehana SiCOI i nā waiwai uila, wela, a me nā ʻano mechanical o SiC me nā pono hoʻokaʻawale uila o ka papa oxide a me ke kākoʻo mechanical o ka substrate silicon. ʻO ka hoʻohana ʻana iā HPSI SiC e hoʻomaikaʻi i ka hana ʻana o ka mea hana ma o ka hoʻemi ʻana i ka conduction substrate a me ka hōʻemi ʻana i nā poho parasitic, e hana i kēia mau wafers i kūpono no nā noi semiconductor kiʻekiʻe, kiʻekiʻe-frequency, a me ka wela wela. Kūkākūkā ʻia ke kaʻina hana, nā hiʻohiʻona waiwai, a me nā pono hoʻolālā o kēia hoʻonohonoho multilayer, e hōʻike ana i kona pili ʻana i nā uila uila a me nā ʻōnaehana microelectromechanical (MEMS). Hoʻohālikelike ka haʻawina i nā waiwai a me nā noi kūpono o 4-inch a me 6-inch SiCOI wafers, e hōʻike ana i ka scalability a me ka hoʻohui ʻana i nā manaʻo no nā polokalamu semiconductor kiʻekiʻe.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

ʻO ke ʻano o ka wafer SiCOI

HPB (High-Performance Bonding) BIC (Bonded Integrated Circuit) a me SOD (Silicon-on-Diamond or Silicon-on-Insulator-like technology). Loaʻa iā ia:

Nā Ana Hana Hana:

Hoʻopaʻa inoa i nā ʻāpana e like me ka pololei, nā ʻano hewa (e laʻa, "ʻAʻohe hewa," "Ka mamao o ka waiwai"), a me nā ana mānoanoa (e laʻa, "Ka mānoanoa-Layer/kg").

He papaʻaina me nā waiwai helu (he hoʻokolohua paha a i ʻole nā ʻāpana kaʻina hana) ma lalo o nā poʻomanaʻo e like me "ADDR/SYGBDT," "10/0," etc.

ʻIkepili Mānoanoa Layer:

ʻO nā mea hoʻopuka hou i kapa ʻia "L1 Mānoanoa (A)" i "L270 Mānoanoa (A)" (ma Ångströms paha, 1 Å = 0.1 nm).

Manaʻo ʻia kahi ʻano ʻāpana ʻāpana me ka mana mānoanoa pololei no kēlā me kēia papa, maʻamau i nā wafers semiconductor kiʻekiʻe.

ʻO SiCOI Wafer Structure

ʻO SiCOI (Silicon Carbide on Insulator) kahi hana wafer kūikawā e hui pū ana i ka silicon carbide (SiC) me kahi papa insulating, e like me SOI (Silicon-on-Insulator) akā i hoʻopaʻa ʻia no nā noi kiʻekiʻe / kiʻekiʻe. Nā hiʻohiʻona nui:

Hui Layer:

Layer Top: Single-crystal Silicon Carbide (SiC) no ka neʻe electron kiʻekiʻe a me ke kūpaʻa wela.

ʻO ka Insulator i kanu ʻia: maʻamau ʻo SiO₂ (oxide) a i ʻole daimana (ma SOD) e hōʻemi i ka capacitance parasitic a hoʻomaikaʻi i ka noho kaʻawale.

Ka Papa Kumu: Silicon a polycrystalline SiC no ke kākoʻo mechanical

Nā waiwai o ka wafer SiCOI

Na Waiwai Uila ʻO Wide Bandgap (3.2 eV no 4H-SiC): E hoʻonā i ka voltage breakdown kiʻekiʻe (> 10 × kiʻekiʻe ma mua o ke silicon).

Ka Electron Mobility:~900 knm²/V·s (4H-SiC) vs. ~1,400 cm²/V·s (Si), akā ʻoi aku ka maikaʻi o ka hana kiʻekiʻe.

Haʻahaʻa ma ke kūʻē:ʻO nā transistors ma muli o SiCOI (e laʻa, MOSFETs) hōʻike i nā poho conduction haʻahaʻa.

ʻO ka hoʻokaʻawale maikaʻi loa:ʻO ka oxide i kanu ʻia (SiO₂) a i ʻole ka papa daimana e hōʻemi i ka capacitance parasitic a me ka crosstalk.

Waiwai welaHigh Thermal Conductivity:SiC (~ 490 W / m · K no 4H-SiC) vs. Si (~ 150 W / m · K) .

Paʻa wela:Hoʻohana hilinaʻi ma> 300 ° C (vs. ~ 150 ° C no ka silicon). Hoʻemi i nā koi hoʻoluʻu i ka uila uila.

3. Mea Mechanical & ChemicalPaʻa loa (~ 9.5 Mohs): Kūʻē i ka ʻaʻahu, e hoʻopaʻa paʻa iā SiCOI no nā kaiapuni paʻakikī.

Kemikini inertness:Kū'ē i ka oxidation a me ka corrosion, ʻoiai ma nā kūlana acidic/alkaline.

Hoʻonui wela haʻahaʻa:Hoʻohālikelike maikaʻi me nā mea wela kiʻekiʻe (e laʻa, GaN).

4. Nā Pono Kūleʻa (vs. Bulk SiC a i ʻole SOI)

Hoʻemi ʻia nā poho substrate:ʻO ka papa insulating e pale i ka leaka o kēia manawa i loko o ka substrate.

Hoʻomaikaʻi ʻia ka hana RF:Hiki i ka capacitance parasitic haʻahaʻa ke hoʻololi wikiwiki (pono no nā polokalamu 5G/mmWave).

Hoʻolālā maʻalahi:Hiki i ka papa luna ʻo SiC ke ʻae i ka hoʻonui ʻia ʻana o ka hāmeʻa (e laʻa, nā kahawai ultra-thin i nā transistors).

Hoʻohālikelike me SOI & Bulk SiC

Waiwai	SiCOI	SOI (Si/SiO₂/Si)	Nui SiC
Bandgap	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
ʻO ka hoʻoili wela	Kiʻekiʻe (SiC + daimana)	Haʻahaʻa (SiO₂ palena i ke kahe wela)	Kiʻekiʻe (SiC wale nō)
Ka Volta Haʻihaʻi	Kiekie loa	Kaumaha	Kiekie loa
Koina	Kiʻekiʻe	lalo	Kiʻekiʻe loa (SiC maʻemaʻe)

Nā noi a SiCOI wafer

Mea uila uila
Hoʻohana nui ʻia nā wafers SiCOI i nā mīkini semiconductor kiʻekiʻe a me ka mana kiʻekiʻe e like me MOSFET, Schottky diodes, a me nā hoʻololi mana. Hiki i ka bandgap ākea a me ka voltage breakdown kiʻekiʻe o SiC ke hoʻololi i ka mana kūpono me ka hoʻemi ʻia o nā poho a me ka hoʻonui ʻana i ka hana wela.

Nā Mea Hana Lekiō (RF).
ʻO ka papa insulating i loko o nā wafers SiCOI e hōʻemi i ka capacitance parasitic, e kūpono iā lākou no nā transistors kiʻekiʻe a me nā amplifier i hoʻohana ʻia i nā ʻenehana kelepona, radar, a me 5G.

Pūnaehana Microelectromechanical (MEMS)
Hāʻawi nā wafers SiCOI i kahi kahua paʻa no ka hana ʻana i nā mea ʻike MEMS a me nā mea hana e hana hilinaʻi i nā wahi paʻakikī ma muli o ka inertness kemika a me ka ikaika mechanical o SiC.

Mea Uila Kiekie
Hāʻawi ʻo SiCOI i nā mea uila e mālama i ka hana a me ka hilinaʻi i nā mahana kiʻekiʻe, e hoʻomaikaʻi ana i ka automotive, aerospace, a me nā noi ʻoihana kahi i hāʻule ʻole nā mea hana silicon maʻamau.

Nā Mea Hana Photonic a me Optoelectronic
ʻO ka hui pū ʻana o nā waiwai optical o SiC a me ka papa insulating e hoʻoikaika i ka hoʻohui ʻana o nā kaapuni photonic me ka hoʻokele thermal i hoʻonui ʻia.

Mea Uila Paʻa Paʻa Radiation
Ma muli o ka hoʻomanawanui ʻana o ka radiation inherent o SiC, ua kūpono nā wafers SiCOI no ka lewa a me nā noi nuklea e koi ana i nā mea e kū nei i nā kaiapuni kiʻekiʻe.

Nīnau a SiCOI wafer

Q1: He aha ka SiCOI wafer?

A: Ke kū nei ʻo SiCOI no Silicon Carbide-on-Insulator. He ʻano wafer semiconductor kahi i hoʻopaʻa ʻia ai kahi ʻāpana lahilahi o ka silicon carbide (SiC) i kahi papa insulating (maʻamau ʻo silicon dioxide, SiO₂), i kākoʻo ʻia e kahi substrate silicon. Hoʻohui kēia hale i nā waiwai maikaʻi o SiC me ka hoʻokaʻawale uila mai ka insulator.

Q2: He aha nā pōmaikaʻi nui o nā wafers SiCOI?

A: ʻO nā pōmaikaʻi nui e pili ana i ka voltage breakdown kiʻekiʻe, bandgap ākea, conductivity thermal maikaʻi, ʻoi aku ka paʻakikī mechanical, a me ka hoʻohaʻahaʻa parasitic capacitance mahalo i ka papa insulating. Ke alakaʻi nei kēia i ka hoʻomaikaʻi ʻana i ka hana o ka mea hana, ka pono, a me ka hilinaʻi.

Q3: He aha nā noi maʻamau o nā wafers SiCOI?

A: Hoʻohana ʻia lākou i ka uila uila, nā mea uila RF kiʻekiʻe, nā mea ʻike MEMS, nā uila uila kiʻekiʻe, nā mea photonic, a me nā uila paʻakikī paʻakikī.