ʻO ke kūpaʻa ʻana o ka carbide silikoni i ka umu aniani lōʻihi e ulu ana he 6/8/12 ʻīniha SiC ingot crystal PVT ala.

ʻO ke kūpaʻa ʻana o ka carbide silikoni i ka umu aniani lōʻihi e ulu ana 6/8/12 iniha SiC ingot crystal PVT ʻano kiʻi i hōʻike ʻia.

ʻO ka wehewehe pōkole:

Silicon carbide resistance growth furnace (PVT method, physical vapor transfer method) he mea koʻikoʻi no ka ulu ʻana o ka silicon carbide (SiC) hoʻokahi aniani e ke kiʻekiʻe wela sublimation-recrystallization kumu. Hoʻohana ka ʻenehana i ka hoʻomehana kū'ē (graphite heating body) e hoʻohaʻahaʻa i ka SiC maka mea ma kahi kiʻekiʻe o 2000 ~ 2500 ℃, a hoʻihoʻi hou i ka ʻāina haʻahaʻa haʻahaʻa (seed crystal) e hana i kahi aniani kiʻekiʻe SiC hoʻokahi (4H / 6H-SiC). ʻO ke ala PVT ke kaʻina hana nui no ka hana nui ʻana o nā substrates SiC o 6 iniha a ma lalo, i hoʻohana nui ʻia i ka hoʻomākaukau substrate o nā semiconductors mana (e like me MOSFET, SBD) a me nā mea uila uila (GaN-on-SiC).

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Ke kumu hana:

1. Hoʻouka ʻia nā mea maka: ka pauka SiC maʻemaʻe kiʻekiʻe (a i ʻole poloka) i waiho ʻia ma lalo o ka graphite crucible (kahi wela wela).

2. Kaiapuni ʻāmā/inert: e hoʻomāmā i ke keʻena umu (<10⁻³ mbar) a i ʻole e hele i ke kinoea inert (Ar).

3. Kiʻekiʻe wela sublimation: kū'ē wela i 2000 ~ 2500 ℃, SiC decomposition i loko o Si, Si₂C, SiC₂ a me nā mea kinoea.

4. Ka hoʻoili ʻana o ke kinoea: hoʻokuʻu ka ʻemi wela i ka laha ʻana o ka ʻāpana kinoea i ka ʻāpana wela haʻahaʻa (hopena hua).

5. Ka ulu ʻana o ke aniani: E hoʻohāinu hou ka māhele kinoea ma luna o ka ʻili o ka Crystal Seed a ulu aʻe ma kahi kuhikuhi ma ke ʻano C-axis a i ʻole A-axis.

Nā ʻāpana kī:

1. ʻO ke ana wela: 20~50 ℃/cm (ka hoʻomalu i ka ulu ʻana a me ka nui o nā hemahema).

2. Paʻi: 1 ~ 100mbar (ka haʻahaʻa haʻahaʻa e hōʻemi i ka hoʻohuihui haumia).

3.Growth rate: 0.1 ~ 1mm / h (e pili ana i ka maikaʻi kristal a me ka hana pono).

Nā hiʻohiʻona nui:

(1) Ka maikaʻi o ke aniani
Haʻahaʻa defect density: microtubule density <1 cm⁻², dislocation density 10³~10⁴ cm⁻² (ma o ka hoʻonui ʻana i nā hua a me ka hoʻokele kaʻina hana).

Polycrystalline type control: hiki ke ulu i ka 4H-SiC (mainstream), 6H-SiC, 4H-SiC proportion>90% (pono e hoʻomalu pono i ka mahana gradient a me ke kinoea phase stoichiometric ratio).

(2) Hana lako
ʻO ke kūpaʻa wela kiʻekiʻe: ka wela o ke kino wela graphite> 2500 ℃, hoʻohana ke kino umu ahi i ka hoʻolālā insulation multi-layer (e like me ka graphite feel + wai-cooled jacket).

Ka mana like: Axial/radial wela fluctuations o ± 5 ° C e hōʻoia i ke aniani anawaena kūlike (6-inihi substrate mānoanoa deviation <5%).

Degree of automation: Integrated PLC control system, real-time monitoring of temperature, pressure and growth rate.

(3) Pono ʻenehana
Hoʻohana waiwai kiʻekiʻe: ʻoi aku ka nui o ka hoʻololi ʻana o ka waiwai ma mua o 70% (ʻoi aku ka maikaʻi ma mua o ke ʻano CVD).

ʻO ka hoʻohālikelike nui nui: 6-ʻīniha ka hana nui i loaʻa, 8-ʻīniha i ka pae hoʻomohala.

(4) Hoʻohana ikehu a me ke kumukūʻai
ʻO ka hoʻohanaʻana i ka ikehu o ka umu ahi hoʻokahi he 300 ~ 800kW · h, e helu ana no 40% ~ 60% o ke kumu kūʻai o SiC substrate.

He kiʻekiʻe ka hoʻokomo ʻana o nā mea hana (1.5M 3M no kēlā me kēia ʻāpana), akā ʻoi aku ka haʻahaʻa o ke kumukūʻai substrate ma mua o ke ʻano CVD.

Nā polokalamu kumu:

1. Mea uila uila: SiC MOSFET substrate no ka mea hoʻohuli kaʻa uila a me ka hoʻohuli photovoltaic.

2. Nā mea hana Rf: 5G base station GaN-on-SiC epitaxial substrate (nui loa 4H-SiC).

3. Nā mea hana kaiapuni kiʻekiʻe: kiʻekiʻe kiʻekiʻe a me kiʻekiʻe puʻe naʻau no ka aerospace a me ka nuklea mea ikehu.

Nā palena ʻenehana:

Hōʻike	Nā kikoʻī
Nā Ana (L × W × H)	2500 × 2400 × 3456 mm a hoʻopilikino paha
Anawaena Crucible	900 mm
ʻO ka Pumi ʻAha Loa	6 × 10⁻⁴ Pa (ma hope o 1.5h o ka momi)
Ka Leakage	≤5 Pa/12h (kaʻi ʻia)
Ka Anawaena Poali	50 mm
Holo ka māmā	0.5–5 rpm
ʻAno hoʻomehana	ʻO ka hoʻomehana pale uila
ʻO ka wela wela o ka umu ahi	2500°C
Mana Hoowela	40 kW × 2 × 20 kW
Ana wela	Pyrometer infrared ʻelua kala
Kaulana Mahana	900–3000°C
Pono ka wela	±1°C
Paʻi Paʻi	1–700 mbar
Ka pololei o ke kaomi ʻana	1–10 mbar: ± 0.5% FS; 10–100 mbar: ± 0.5% FS; 100–700 mbar: ±0.5% FS
ʻAno hana	ʻO ka hoʻouka ʻana i lalo, nā koho palekana manual/akomi
Nā hiʻohiʻona koho	Ana wela pālua, ʻāpana wela he nui

Nā lawelawe XKH:

Hāʻawi ʻo XKH i ka lawelawe kaʻina holoʻokoʻa o ka umu SiC PVT, me ka hoʻoponopono ʻana i nā mea hana (ka hoʻolālā kahua wela, ka hoʻokele aunoa), ka hoʻomohala ʻana i ke kaʻina hana (ka mana o ka crystall shape, defect optimization), ka hoʻomaʻamaʻa ʻenehana (hana a me ka mālama ʻana) a me ke kākoʻo ma hope o ke kūʻai ʻana (ka hoʻololi ʻana i nā wahi graphite, thermal field calibration). Hāʻawi pū mākou i nā lawelawe hoʻomaikaʻi kaʻina no ka hoʻomaikaʻi mau ʻana i ka hua kristal a me ka ulu ulu ʻana, me kahi manawa alakaʻi maʻamau o 3-6 mau mahina.