ʻO ka wafer Silicon Dioxide SiO2 wafer mānoanoa i poli ʻia, Prime And Test Grade
Hoʻolauna i ka pahu wafer
| Huahana | Nā wafers Thermal Oxide (Si+SiO2) |
| ʻAno Hana | LPCVD |
| Ka hoʻowali ʻili | SSP/DSP |
| Anawaena | 2 ʻīniha / 3 ʻīniha / 4 ʻīniha / 5 ʻīniha / 6 ʻīniha |
| ʻAno | ʻAno P / ʻAno N |
| Mānoanoa o ka papa ʻokikene | 100nm ~1000nm |
| Hoʻonohonoho | <100> <111> |
| Ke kū'ē uila | 0.001-25000(Ω•cm) |
| Noi | Hoʻohana ʻia no ka mea lawe hāpana radiation synchrotron, ka uhi ʻana o PVD/CVD ma ke ʻano he substrate, ka hāpana ulu magnetron sputtering, XRD, SEM,Ka ikaika atomika, spectroscopy infrared, spectroscopy fluorescence a me nā substrates hoʻāʻo loiloi ʻē aʻe, nā substrates ulu epitaxial beam molecular, ka nānā ʻana o X-ray o nā semiconductors crystalline |
ʻO nā wafers silicon oxide he mau kiʻiʻoniʻoni silicon dioxide i ulu ʻia ma luna o ka ʻili o nā wafers silicon ma o ka oxygen a i ʻole ka mahu wai ma nā mahana kiʻekiʻe (800°C ~ 1150°C) me ka hoʻohana ʻana i ke kaʻina hana oxidation thermal me nā lako paipu umu kaomi lewa. ʻO ka mānoanoa o ke kaʻina hana mai 50 nanometers a i 2 microns, ʻo ka mahana o ke kaʻina hana a hiki i 1100 degere Celsius, ua māhele ʻia ke ʻano ulu i ʻelua ʻano "oxygen pulu" a me "oxygen maloʻo". ʻO ka Thermal Oxide kahi papa oxide "ulu", nona ke ʻano like kiʻekiʻe, ʻoi aku ka maikaʻi o ka densification a me ka ikaika dielectric kiʻekiʻe ma mua o nā papa oxide i waiho ʻia e CVD, e hopena ana i ka maikaʻi kiʻekiʻe.
ʻOkikeneka Oxygen Maloʻo
Hoʻopili ka Silicon me ka oxygen a ke neʻe mau nei ka papa oxide i ka papa substrate. Pono e hana ʻia ka oxidation maloʻo ma nā mahana mai 850 a 1200°C, me nā helu ulu haʻahaʻa, a hiki ke hoʻohana ʻia no ka ulu ʻana o ka puka insulated MOS. Makemake ʻia ka oxidation maloʻo ma mua o ka oxidation pulu ke koi ʻia kahi papa silicon oxide kiʻekiʻe a lahilahi. Ka hiki ke oxidation maloʻo: 15nm~300nm.
2. Hoʻomake ʻia ka pulu
Hoʻohana kēia ʻano hana i ka mahu wai e hana i kahi papa oxide ma ke komo ʻana i loko o ka ʻōmole umu ma lalo o nā kūlana wela kiʻekiʻe. ʻOi aku ka ʻino o ka densification o ka oxidation oxygen pulu ma mua o ka oxidation oxygen maloʻo, akā i ka hoʻohālikelike ʻana me ka oxidation oxygen maloʻo, ʻo kona pono he kiʻekiʻe ka ulu ʻana, kūpono no ka ulu ʻana o ka ʻili ma mua o 500nm. Ka hiki ke oxidation pulu: 500nm~2µm.
ʻO ka paipu umu hoʻomakeʻe kaomi lewa o AEMD he paipu umu pālahalaha Czech, i hōʻailona ʻia e ke kūpaʻa hana kiʻekiʻe, ke ʻano like o ka ʻili maikaʻi a me ka kaohi ʻāpana kiʻekiʻe. Hiki i ka paipu umu silicon oxide ke hana a hiki i 50 mau wafers no kēlā me kēia paipu, me ke ʻano like maikaʻi loa o loko a me waena o nā wafers.
Kiʻikuhi kikoʻī
