Pākuʻi
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12 ʻīniha SIC substrate silicon carbide prime grade diameter 300mm nui ka nui 4H-N Kūpono no ka hoʻopuehu wela o ka mea mana kiʻekiʻe
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ʻO ka Dia300x1.0mmt ka mānoanoa o ka Sapphire Wafer C-Plane SSP/DSP
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ʻO ke anawaena wafer HPSI SiC: 3'iniha ka mānoanoa: 350um± 25 µm no nā mea uila mana
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8 ʻīniha 200mm Sapphire substrate sapphire wafer lahilahi mānoanoa 1SP 2SP 0.5mm 0.75mm
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8 ʻīniha SiC silicon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana i hoʻopili ʻia
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ʻO nā wafers sapphire kristal hoʻokahi Al2O3 99.999% Dia200mm 1.0mm 0.75mm ka mānoanoa
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156mm 159mm 6 ʻīniha Sapphire Wafer no ka mea lawe C-Plane DSP TTV
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ʻO ke axis C/A/M 4 ʻīniha nā wafers sapphire hoʻokahi kristal Al2O3, SSP DSP substrate sapphire paʻakikī kiʻekiʻe
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3'īniha Semi-Insulating maʻemaʻe kiʻekiʻe (HPSI) SiC wafer 350um Dummy grade Prime grade
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ʻO ka substrate SiC ʻano P SiC wafer Dia2inch huahana hou
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ʻO 8'īniha 200mm Silicon Carbide SiC Wafers 4H-N ʻano Hana hana 500um mānoanoa
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade