Pāpaʻa
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4H-N 8 ʻīniha SiC substrate wafer Silicon Carbide Dummy Research grade 500um mānoanoa
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4H-N/6H-N SiC Wafer Reasearch hana Dummy grade Dia150mm Silicon carbide substrate
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N ʻano ʻAno Hana ʻia 500um mānoanoa
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Dia300x1.0mmt Mānoanoa Sapphire Wafer C-Plane SSP/DSP
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8 iniha 200mm Sapphire substrate sapphire wafer lahilahi mānoanoa 1SP 2SP 0.5mm 0.75mm
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8 'īniha SiC silikon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana maʻamau i poni ʻia.
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HPSI SiC wafer dia: 3 iniha mānoanoa: 350um± 25 µm no Power Electronics
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Hoʻokahi aniani Al2O3 99.999% Dia200mm sapphire wafers 1.0mm 0.75mm mānoanoa
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156mm 159mm 6 iniha Sapphire Wafer no ka mea lawe C-Plane DSP TTV
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C/A/M axis 4 iniha sapphire wafers hookahi aniani Al2O3,SSP DSP ki'eki'e paakiki sapphire substrate
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3 ʻīniha Maʻemaʻe kiʻekiʻe Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch huahana hou