Lako Wafer Thinning No 4 Iniha-12 Iniha Sapphire/SiC/Si Wafers Processing​

1. Hoʻopili kiʻekiʻe
• Nā IC 3D: Hiki i ka hoʻoheheʻe ʻia ʻana o ka wafer ke hoʻopaʻa pololei i nā ʻāpana logic/memory chips (e laʻa, HBM stacks), loaʻa iā 10x kiʻekiʻe bandwidth a me 50% hoʻemi ʻia ka hoʻohana ʻana i ka mana i hoʻohālikelike ʻia me 2.5D solutions. Kākoʻo nā mea hana i ka hoʻopili hybrid a me ka hoʻohui ʻana o TSV (Through-Silicon Via), koʻikoʻi no nā kaʻina AI/ML e koi ana i <10 μm interconnect pitch. No ka laʻana, 12-inch wafers thinned i 25 μm e ʻae i ka hoʻopaʻa ʻana i 8+ papa ʻoiai e mālama ana i <1.5% warpage, pono no nā ʻōnaehana LiDAR automotive.

• Fan-Out Packaging: Ma ka ho'ēmiʻana i ka mānoanoa wafer i 30 μm, ua pōkole ka lōʻihi o ka pilina e 50%, e hōʻemi ana i ka lohi hōʻailona (<0.2 ps / mm) a hiki i ka 0.4 mm ultra-thin chiplets no nā SoCs mobile. Hoʻohana ke kaʻina hana i nā algorithms wili i uku ʻia e pale i ka warpage (> 50 μm TTV control), e hōʻoia i ka hilinaʻi i nā noi RF kiʻekiʻe.

2. Mea uila uila
• Nā Module IGBT: ʻO ka hoʻoemi ʻana i ka 50 μm e hōʻemi i ka pale ʻana i ka wela i <0.5 ° C / W, hiki i ka 1200V SiC MOSFET ke hana ma 200 ° C junction wela. Hoʻohana kā mākou mau mea hana i ka wili ʻana i nā ʻāpana he nui (kokoke: 46 μm grit → maikaʻi: 4 μm grit) e hoʻopau i ka pōʻino o lalo, e loaʻa ana ma kahi o 10,000 mau pōʻai o ka hilinaʻi kaʻa uila. He mea koʻikoʻi kēia no nā mea hoʻohuli EV, kahi e hoʻomaikaʻi ai nā wafers SiC 10 μm-mānoanoa i ka wikiwiki hoʻololi e 30% .
• Nā Mea Mana Mana GaN-on-SiC: Hoʻonui ka wafer thinning i 80 μm i ka neʻe electron (μ > 2000 cm²/V·s) no 650V GaN HEMTs, e hōʻemi ana i nā poho conduction e 18%. Ke hoʻohana nei ke kaʻina hana i ka dicing kōkua laser e pale aku i ka haki ʻana i ka wā o ka lahilahi, e loaʻa ana <5 μm edge chipping no RF power amplifiers.

3. Optoelectronics
• Nā LED GaN-on-SiC: 50 μm sapphire substrates e hoʻonui i ka pono o ka laweʻana i ka māmā (LEE) i ka 85% (vs. 65% no nā wafers 150 μm) ma ka hoʻemiʻana i ka paʻi kiʻi photon. ʻO ka mana TTV ultra-haʻahaʻa o kā mākou mea hana (<0.3 μm) e hōʻoia i ka hoʻokuʻu ʻana o ka LED ma waena o nā wafers 12-inch, koʻikoʻi no nā hōʻike Micro-LED e koi ana i ka like ʻana o ka lōʻihi hawewe he 100nm.
• Silicon Photonics: 25μm-mānoanoa silicon wafers hiki i 3 dB/cm haʻahaʻa hoʻolaha poho i loko o waveguides, pono no 1.6 Tbps optical transceivers. Hoʻopili ke kaʻina hana i ka hoʻomaʻamaʻa CMP e hōʻemi i ka roughness o ka ʻili i Ra <0.1 nm, e hoʻonui ana i ka maikaʻi o ka hui ʻana e 40%.

4. Nā mea ʻike MEMS
• Accelerometers: 25 μm silicon wafers loaʻa SNR>85 dB (vs. 75 dB no 50 μm wafers) ma ka hoʻonui ʻana i ka proof-mass displacement sensitivity. Hoʻopiʻi kā mākou ʻōnaehana wili ʻelua-axis no nā gradients koʻikoʻi, e hōʻoia ana <0.5% ka neʻe ʻana o ka naʻau ma luna o -40°C a i 125°C. Loaʻa nā noi i ka ʻike ulia kaʻa a me ka nānā ʻana i ka neʻe AR/VR.

• Nā Manaʻo Paʻi: ʻO ka hoʻoemi ʻana a hiki i 40 μm hiki i ka 0–300 mau pae ana ʻana me <0.1% FS hysteresis. Ke hoʻohana nei i ka hoʻopaʻa ʻana i ka manawa (nā mea lawe aniani), pale ke kaʻina hana i ka haʻihaʻi ʻana i ka wafer i ka wā etching hope, e loaʻa ana <1 μm overpressure tolerance no nā mea ʻike IoT ʻoihana.

• Hoʻonaʻauao ʻenehana: Hoʻohui kā mākou mea hoʻoheheʻe wafer i ka wili mīkini, CMP, a me ka etching plasma no ka hoʻoponopono ʻana i nā pilikia waiwai like ʻole (Si, SiC, Sapphire). No ka laʻana, koi ʻo GaN-on-SiC i ka wili hybrid (nā huila daimana + plasma) e hoʻohālikelike i ka paʻakikī a me ka hoʻonui ʻana i ka wela, aʻo nā mea ʻike MEMS e koi ana i ka ʻeleʻele sub-5 nm ma o CMP polishing.

• Ka hopena o ka ʻoihana: Ma ka ʻae ʻana i nā wafers ʻoi aku ka lahilahi, ʻoi aku ka maikaʻi o ka hana, ua hoʻokau kēia ʻenehana i nā mea hou i nā chips AI, 5G mmWave modules, a me nā mea uila maʻalahi, me nā ʻae TTV <0.1 μm no nā hōʻike foldable a <0.5 μm no nā mea ʻike LiDAR kaʻa.