4H-N 4 ʻīniha SiC substrate wafer Silicon Carbide Production Dummy Research grade
Nā noi
4-inihi silicon carbide one crystal substrate wafers he mea nui i na kula he nui. ʻO ka mea mua, hoʻohana nui ʻia i ka ʻoihana semiconductor i ka hoʻomākaukau ʻana i nā mea uila uila kiʻekiʻe e like me nā transistors mana, nā ʻāpana hoʻohui a me nā modula mana. ʻO kāna conductivity thermal kiʻekiʻe a me ke kūpaʻa wela kiʻekiʻe e hiki ai iā ia ke hoʻopau maikaʻi i ka wela a hāʻawi i ka ʻoi aku ka maikaʻi o ka hana a me ka hilinaʻi. ʻO ka lua, hoʻohana ʻia nā wafers silicon carbide i ka ʻimi noiʻi e hana i ka noiʻi ʻana i nā mea hou a me nā mea hana. Eia kekahi, hoʻohana nui ʻia nā wafers silicon carbide i nā optoelectronics, e like me ka hana ʻana o nā led a me nā diodes laser.
ʻO nā kikoʻī o 4inch SiC wafer
4-inihi silika carbide one crystal substrate wafer anawaena o 4 iniha (ma kahi o 101.6mm), ili hoʻopau a hiki i Ra <0.5 nm, mānoanoa o 600±25 μm. ʻO ka conductivity o ka wafer he ʻano N a i ʻole ʻano P a hiki ke hoʻololi ʻia e like me nā pono o ka mea kūʻai aku. Eia kekahi, loaʻa i ka chip ke kūpaʻa mechanical maikaʻi loa, hiki ke kū i kahi nui o ke kaomi a me ka vibration.
inch silicon carbide one crystal substrate wafer he mea hana kiʻekiʻe i hoʻohana nui ʻia i nā semiconductor, noiʻi a me nā kahua optoelectronics. Loaʻa iā ia ka conductivity thermal maikaʻi loa, ke kūpaʻa mechanical a me ke kūpaʻa wela kiʻekiʻe, kahi kūpono no ka hoʻomākaukau ʻana i nā mea uila mana kiʻekiʻe a me ka noiʻi ʻana i nā mea hou. Hāʻawi mākou i nā ʻano kikoʻī like ʻole a me nā koho maʻamau e hoʻokō i nā ʻano mea kūʻai aku. E ʻoluʻolu e nānā i kā mākou pūnaewele kūʻokoʻa e aʻo hou e pili ana i ka ʻike huahana o nā wafers silicon carbide.
Nā hana nui: Silicon carbide wafers, silicon carbide one crystal substrate wafers, 4 iniha, thermal conductivity, mechanical stability, high temperature resistance, power transistors, integrated circuits, power modules, leds, laser diodes, surface finish, conductivity, custom options