LiTaO3 Wafer 2 iniha-8 ʻīniha 10x10x0.5 mm 1sp 2sp no 5G/6G Kūkākūkā
Nā palena ʻenehana
| inoa | Optical-grade LiTaO3 | Ka pae papa leo LiTaO3 |
| Axial | ʻoki Z + / - 0.2 ° | 36 ° Y oki / 42 ° Y oki / X oki (+ / - 0.2 °) |
| Anawaena | 76.2mm + / - 0.3mm/ 100±0.2mm | 76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm |
| mokulele Datum | 22mm + / - 2mm | 22mm + /-2mm 32mm + /-2mm |
| mānoanoa | 500um + /-5mm 1000um + /-5mm | 500um + /-20mm 350um + /-20mm |
| TTV | ≤ 10um | ≤ 10um |
| Ka wela Curie | 605 °C + / - 0.7 °C (Ke ʻano DTA) | 605 °C + / -3 °C (Keʻano DTA |
| Ka maikaʻi o ka ʻili | ʻO ka poli ʻaoʻao ʻelua | ʻO ka poli ʻaoʻao ʻelua |
| Nā ʻaoʻao Chamfered | pōʻai puni | pōʻai puni |
Nā ʻano nui
1. Uila a me Optical hana
· Electro-Optic Coefficient: r33 hiki i 30 pm/V (X-cut), 1.5× kiʻekiʻe ma mua o LiNbO3, hiki i ka ultra-wideband electro-optic modulation (>40 GHz bandwidth).
· Pane Spectral Pane: 0.4–5.0 μm (8 mm mānoanoa), me ka ʻaoʻao absorption ultraviolet ma lalo o 280 nm, kūpono no nā lasers UV a me nā mea kiko kiko.
· Pyroelectric Coefficient Haʻahaʻa: dP/dT = 3.5×10⁻⁴ C/(m²·K), e hōʻoia ana i ka paʻa ʻana i nā mea ʻike infrared wela kiʻekiʻe.
2. Nā mea wela a me ka mīkini
· Kiʻekiʻe Thermal Conductivity: 4.6 W/m·K (X-ʻoki), quadruple ko quartz, hoʻomau -200–500°C thermal cycling.
· Ka Hoʻonui Hoʻonui Haʻahaʻa Haʻahaʻa: CTE = 4.1×10⁻⁶/K (25–1000°C), kūpono me ka pahu silika e hōʻemi i ke kaumaha wela.
3. Ka Hoʻopololei a me ke Kaʻina Hana Pono
· Mikopipe Density: <0.1 cm⁻² (8-inihi wafers), dislocation density <500 cm⁻² (hōʻoia ma o KOH etching).
· Kūleʻa o ka ʻili: CMP-polled a hiki i ka Ra <0.5 nm, e hālāwai ana i nā koi ʻo EUV lithography-grade flatness.
Nā noi nui
| Domain | ʻO nā hiʻohiʻona noiʻi | Nā Pono ʻenehana |
| Nā Kūkākūkā Optical | 100G/400G DWDM lasers, silika photonics hybrid modules | LiTaO3 wafer's broad spectral transmission and low waveguide loss (α <0.1 dB/cm) hiki ke hoonui C-band. |
| 5G/6G Kūkākūkā | Nā kānana SAW (1.8–3.5 GHz), nā kānana BAW-SMR | 42°Y-cut wafers loaʻa iā Kt² >15%, e hāʻawi ana i nā poho hoʻokomo haʻahaʻa (<1.5 dB) a me ka ʻōwili kiʻekiʻe (>30 dB). |
| Nā ʻenehana Quantum | ʻO nā mea ʻike kiʻi hoʻokahi, nā kumu hoʻololi i lalo | ʻO ka helu helu ʻole kiʻekiʻe (χ(2)=40 pm/V) a me ka helu helu ʻeleʻele haʻahaʻa (<100 helu/s) hoʻonui i ka hilinaʻi nui. |
| ʻIke ʻOihana | ʻO nā mea hoʻonā wela kiʻekiʻe, nā mea hoʻololi o kēia manawa | ʻO ka pane piezoelectric o LiTaO3 wafer (g33>20 mV/m) a me ka hoʻomanawanui wela kiʻekiʻe (>400°C) kūpono i nā kaiapuni koʻikoʻi. |
Nā lawelawe XKH
1. Hana ʻia ʻo Wafer maʻamau
· Ka nui a me ka ʻoki ʻana: 2–8-ʻīniha wafers me X/Y/Z-ʻoki, 42°Y-ʻoki, a me nā ʻoki ʻoki maʻamau (± 0.01° hoʻomanawanui).
· Hoʻoponopono Doping: Fe, Mg doping ma o ke ʻano Czochralski (ka pae hoʻopaʻa ʻana 10¹⁶–10¹⁹ cm⁻³) no ka hoʻonui ʻana i nā coefficient electro-optic a me ka paʻa wela.
2. Nā ʻenehana kaʻina hana kiʻekiʻe
ʻ
· Manawa Poling (PPLT): ʻenehana Smart-Cut no nā wafers LTOI, e loaʻa ana i ka ± 10 nm ka pololei o ka domain a me ka quasi-phase-matched (QPM) hoʻololi alapine.
· Heterogeneous Integration: Si-based LiTaO3 composite wafers (POI) me ka mānoanoa (300–600 nm) a me ka thermal conductivity a hiki i 8.78 W/m·K no nā kānana SAW kiʻekiʻe.
3. Nā Pūnaehana Hoʻoponopono Kūlana
ʻ
· Ka ho'āʻo hope-a-hope: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), a me ka ho'āʻo likeʻole o ka optical (Δn <5 × 10⁻⁵).
4.Global Supply Chain Kākoʻo
ʻ
· Ka nui o ka hana ʻana: Ka hoʻopuka ʻana i kēlā me kēia mahina > 5,000 wafers (8-ʻīniha: 70%), me 48-hola hoʻopuka pilikia.
· Pūnaehana Logistics: Hoʻopili ʻia ma ʻEulopa, ʻAmelika ʻĀkau, a me ʻAsia-Pākīpika ma o ka ukana ea/kai me ka hoʻopaʻa ʻana i ka wela.
