LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Mānoanoa 250-500um

ʻO ka wehewehe pōkole:

ʻO nā wafers LiTaO₃ kahi ʻōnaehana piezoelectric koʻikoʻi a me nā mea ferroelectric, e hōʻike ana i nā coefficients piezoelectric kūʻokoʻa, kūpaʻa wela, a me nā waiwai optical, e hoʻolilo iā lākou i mea nui no nā kānana acoustic wave (SAW), bulk acoustic wave (BAW) resonators, optical modulators, a me infrared detectors. Hoʻolaha ʻo XKH i ka LiTaO₃ wafer R&D kiʻekiʻe a me ka hana ʻana, me ka hoʻohana ʻana i ka ulu kristal Czochralski (CZ) kiʻekiʻe a me nā kaʻina hana wai epitaxy (LPE) e hōʻoia i ka homogeneity crystalline kiʻekiʻe me nā densities defect <100/cm².

Hāʻawi ʻo XKH i nā wafers LiTaO₃ 3-ʻīniha, 4-ʻīniha, a me 6-ʻīniha me ka nui o ka crystallographic orientation (X-cut, Y-cut, Z-cut), e kākoʻo ana i ka doping maʻamau (Mg, Zn) a me ka mālama poling e hoʻokō i nā koi pono noi. ʻO ka mea maʻamau dielectric (ε~40-50), piezoelectric coefficient (d₃₃~8-10 pC/N), a me ka mahana Curie (~ 600°C) e hoʻokumu iā LiTaO₃ ma ke ʻano he substrate makemake no nā kānana kiʻekiʻe a me nā ʻike kikoʻī.

Hoʻopili ʻia kā mākou mea hana i hoʻohui ʻia i ka ulu aniani, wafering, polishing, a me ka hoʻoheheʻe kiʻiʻoniʻoni ʻoniʻoni, me ka hiki ke hana i kēlā me kēia mahina ma mua o 3,000 wafers e lawelawe i nā kamaʻilio 5G, nā mea kūʻai uila, photonics, a me nā ʻoihana pale. Hāʻawi mākou i ke kūkākūkā ʻenehana piha, ka hōʻike ʻana i nā hiʻohiʻona, a me nā lawelawe prototyping haʻahaʻa no ka hāʻawi ʻana i nā hoʻonā LiTaO₃.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Nā palena ʻenehana

inoa	Optical-grade LiTaO3	Ka pae papa leo LiTaO3
Axial	ʻoki Z + / - 0.2 °	36 ° Y oki / 42 ° Y oki / X oki(+ / - 0.2 °)
Anawaena	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
mokulele Datum	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
mānoanoa	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Ka wela Curie	605 °C + / - 0.7 °C (Ke ʻano DTA)	605 °C + / -3 °C (Keʻano DTA
Ka maikaʻi o ka ʻili	ʻO ka poli ʻaoʻao ʻelua	ʻO ka poli ʻaoʻao ʻelua
Nā ʻaoʻao Chamfered	pōʻai puni	pōʻai puni

Nā ʻano nui

1. Hana ʻia ʻo Crystal a me ka hana uila

· Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (e laʻa, 6H/15R), me ka XRD kulu ʻana i ka laula piha i ka hapalua kiʻekiʻe (FWHM) ≤32.7 arcsec.
· Ke Kaʻa Kaʻa Kiʻekiʻe: Electron mobility o 5,400 cm²/V·s (4H-SiC) a me ka neʻe ʻana o ka lua o 380 cm²/V·s, e hiki ai i nā hoʻolālā hāmeʻa kiʻekiʻe.
· Paʻa Paʻa: E kū i ka 1 MeV neutron irradiation me ka paepae pōʻino hoʻoneʻe o 1 × 10¹⁵ n/cm², kūpono no ka aerospace a me nā noi nuklea.

2. Thermal a me Mechanical Pono

· Kūikawā Thermal Conductivity: 4.9 W/cm·K (4H-SiC), pākolu o ke kilika, kākoʻo i ka hana ma luna o 200°C.
· Ka Hoʻonui Hoʻonui Haʻahaʻa Haʻahaʻa: CTE o 4.0 × 10⁻⁶ / K (25-1000 ° C), e hōʻoia ana i ka hoʻopili ʻana me ka pahu silicon-based a me ka hōʻemi ʻana i ke kaumaha wela.

3. Ka Mana Mana a me ka Pono Pono
ʻ
· Mikopipe Density: <0.3 cm⁻² (8-inihi wafers), dislocation density <1,000 cm⁻² (hōʻoia ma o KOH etching).
· Kūlana o ka ʻili: CMP-polled a hiki i ka Ra <0.2 nm, e hālāwai ana i nā koi ʻana o EUV lithography-grade flatness.

Nā noi nui

Domaine	ʻO nā hiʻohiʻona noiʻi	Nā Pono ʻenehana
Nā Kūkākūkā Optical	Nā lasers 100G/400G, nā modules hybrid photonics silika	Hiki i nā substrate hua InP ke hiki i ka bandgap pololei (1.34 eV) a me Si-based heteroepitaxy, e hōʻemi ana i ka nalowale o ka hoʻopili ʻana.
Nā Kaʻa ʻEhuka Hou	800V nā mea hoʻohuli kiʻekiʻe-volt, nā mea hoʻoili ma luna o ka moku (OBC)	ʻO nā substrate 4H-SiC kū i ka> 1,200 V, e hōʻemi ana i nā poho conduction e 50% a me ka nui o ka ʻōnaehana e 40%.
5G kamaʻilio	Nā hāmeʻa RF hawewe-milimeter (PA/LNA), nā mea hoʻonui mana o ke kahua kahua	ʻO nā substrate Semi-insulating SiC (resistivity>10⁵ Ω·cm) hiki ke hoʻohui i ka passive kiʻekiʻe (60 GHz+).
Lako Hana Hana	ʻO nā mea ʻike wela kiʻekiʻe, nā mea hoʻololi o kēia manawa, nā mākaʻikaʻi nuklea reactor	Hāʻawi nā substrate hua InSb (0.17 eV bandgap) i ka sensitivity magnetic a hiki i 300%@10 T.

LiTaO₃ Wafers - Nā ʻano nui

1. Hana Piezoelectric Kiʻekiʻe

· Hiki i nā coefficients piezoelectric kiʻekiʻe (d₃₃~8-10 pC/N, K²~0.5%) hiki i nā mea hana SAW/BAW kiʻekiʻe me ka poho hoʻokomo <1.5dB no nā kānana RF 5G

· Kākoʻo ka hoʻohui electromechanical maikaʻi i ka laulā-bandwidth (≥5%) hoʻolālā kānana no nā noi sub-6GHz a me mmWave.

2. Nā Pono Optical

· ʻO ka ʻike ākea ākea (> 70% ka hoʻouna ʻana mai 400-5000nm) no nā modulator electro-optic e loaʻa ana ka bandwidth >40GHz

· Hiki i ka hikiwawe o ka optical nonlinear (χ⁽²⁾~30pm/V) ke hoʻoikaika i ka hanauna harmonic lua (SHG) i nā ʻōnaehana laser.

3. Paʻa Kaiapuni

· Mālama ka mahana Curie kiʻekiʻe (600°C) i ka pane piezoelectric i nā kaiapuni kaʻa (-40°C a 150°C)

· ʻO ka inertness kemika e kūʻē i nā waikawa/alkalies (pH1-13) e hōʻoia i ka hilinaʻi i nā noi sensor ʻenehana

4. Hoʻopilikino hiki

· ʻEnekinia hoʻonohonoho: ʻoki X (51°), ʻoki Y (0°), ʻoki Z (36°) no nā pane piezoelectric i hoʻopili ʻia.

· Nā koho doping: Mg-doped (ke kū'ē i ka pōʻino optic), Zn-doped (hoʻonui d₃₃)

· Ka hoʻopau ʻana o ka ʻili: Epitaxial-ready polishing (Ra<0.5nm), ITO/Au metallization

LiTaO₃ Wafers - Nā noi mua

1. RF Front-End Modules

· Nā kānana 5G NR SAW (Band n77/n79) me ka helu wela o ke alapine (TCF) <|-15ppm/°C|

· Nā mea hoʻoheheʻe ʻo BAW ka laina ākea ākea no ka WiFi 6E/7 (5.925-7.125GHz)

2. Hoʻohui ʻia nā Photonics

· Nā modulators Mach-Zehnder kiʻekiʻe (> 100Gbps) no nā kamaʻilio ʻike kikoʻī.

· QWIP infrared detectors me cutoff wavelengths tunable mai 3-14μm

3. Elele Kaʻa

· Nā mea kani kani kani ultrasonic me >200kHz hana pinepine

· TPMS piezoelectric transducers e ola ana -40°C a 125°C i ka paikikala wela.

4. Pūnaehana Palekana

· Nā kānana mea hoʻokipa EW me ka hōʻole ʻana ma waho o ka hui > 60dB

· ʻO nā puka makani ʻimi Missile IR e hoʻouna ana i 3-5μm MWIR radiation

5. Nā ʻenehana hou

· Optomechanical quantum transducers no ka microwave-to-optical hoʻololi

· Nā papa PMUT no ke kiʻi ultrasound lāʻau (> 20MHz hoʻonā)

LiTaO₃ Wafers - Nā lawelawe XKH

1. Hooponopono Waiwai

· ʻO ka hana Boule-to-wafer me 4-wiki alakaʻi manawa no nā kikoʻī maʻamau

· ʻO ka hoʻohua i hoʻonui ʻia i ke kumu kūʻai e hāʻawi ana i ka pono kumu kūʻai 10-15% me nā mea hoʻokūkū

2. Hoʻoponopono maʻamau

· Wafering kikoʻī kikoʻī: 36°±0.5° ʻoki Y no ka hana SAW maikaʻi loa

· Nā haku i hoʻopaʻa ʻia: MgO (5mol%) doping no nā noi ʻike

Nā lawelawe metala: Cr/Au (100/1000Å) hoʻohālike electrode

3. Kākoʻo ʻenehana

· Nā mea kiko'ī: XRD nā kā'ei ho'oli'ili'i (FWHM<0.01°), ka 'ilikai AFM

· Ke hoʻohālikelike ʻana i nā mea hana: FEM hoʻohālike no ka hoʻolālā hoʻolālā kānana SAW

Ka hopena

Ke hoʻomau nei nā wafers LiTaO₃ i ka holomua ʻenehana ma waena o nā kamaʻilio RF, nā kiʻi paʻi kiʻi hoʻohui ʻia, a me nā mea ʻike ʻino. ʻO ka ʻike loea o XKH, ka pololei o ka hana ʻana, a me ke kākoʻo ʻenekinia noi e kōkua i nā mea kūʻai aku e lanakila i nā pilikia hoʻolālā i nā ʻōnaehana uila e hiki mai ana.