200mm 8 iniha GaN ma ka sapphire Epi-layer wafer substrate

ʻO ka wehewehe pōkole:

ʻO ke kaʻina hana e pili ana i ka ulu epitaxial o kahi papa GaN ma kahi substrate Sapphire me ka hoʻohana ʻana i nā ʻenehana holomua e like me ka metal-organic chemical vapor deposition (MOCVD) a i ʻole molecular beam epitaxy (MBE). Lawe ʻia ka deposition ma lalo o nā kūlana i hoʻopaʻa ʻia e hōʻoia i ka maikaʻi o ka kristal kiʻekiʻe a me ke kūlike kiʻiʻoniʻoni.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Hoʻolauna huahana

ʻO ka 8-inihi GaN-on-Sapphire substrate he mea semiconductor kiʻekiʻe i haku ʻia me kahi papa Gallium Nitride (GaN) i ulu ʻaʻole kahi substrate Sapphire. Hāʻawi kēia mea waiwai i nā waiwai lawe uila maikaʻi loa a kūpono no ka hana ʻana i nā mea hana semiconductor kiʻekiʻe a me nā kiʻekiʻe.

Hana Hana

Nā noi

Loaʻa ka 8-inch GaN-on-Sapphire substrate i nā noi nui ma nā ʻano like ʻole me nā kamaʻilio microwave, radarsystems, ʻenehana uila, a me optoelectronics. ʻO kekahi o nā noi maʻamau:

1. Nā mea hoʻonui mana RF

2. ʻOihana kukui LED

3. Nā mea hoʻohana kelepona ʻole

4. Nā mea uila no nā wahi wela kiʻekiʻe

5. Onā mea ptoelectronic

Nā Kūlana Huahana

-Nānā: ʻO ka nui o ka substrate he 8 iniha (200 mm) ke anawaena.

- Kūleʻa Kūleʻa: Hoʻomaʻamaʻa ʻia ka ʻili i kahi kiʻekiʻe o ka maʻalahi a hōʻike i ka maikaʻi e like me ke aniani.

- Mānoanoa: Hiki ke hoʻopilikino ʻia ka mānoanoa ʻo GaN ma muli o nā koi kikoʻī.

- Packaging: Hoʻopili maikaʻi ʻia ka substrate i nā mea anti-static e pale ai i ka pōʻino i ka wā e hele ai.

- Orientation Flat: Loaʻa i ka substrate kahi kikoʻī kikoʻī e kōkua i ka alignment wafer a me ka lawelawe ʻana i nā kaʻina hana hana.

- Nā ʻāpana ʻē aʻe: Hiki ke hoʻohālikelike ʻia nā kikoʻī o ka mānoanoa, resistivity, a me dopant e like me nā koi o ka mea kūʻai aku.

Me kāna mau waiwai waiwai a me nā noi maʻamau, ʻo ka 8-inch GaN-on-Sapphire substrate kahi koho hilinaʻi no ka hoʻomohala ʻana i nā mea hana semiconductor kiʻekiʻe i nā ʻoihana like ʻole.

Ma waho aʻe o GaN-On-Sapphire, hiki iā mākou ke hāʻawi aku i ke kahua o nā noi mīkini mana, ʻo ka ʻohana huahana e komo pū me 8-inch AlGaN/GaN-on-Si epitaxial wafers a me 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers. I ka manawa like, ua hoʻomohala mākou i ka hoʻohana ʻana i kāna ʻenehana epitaxy 8-inch GaN epitaxy kiʻekiʻe i ka māla microwave, a hoʻomohala i kahi 8-inch AlGaN / GAN-on-HR Si epitaxy wafer e hoʻohui i ka hana kiʻekiʻe me ka nui, haʻahaʻa kumu kūʻai. a kūpono hoʻi me ka hana maʻamau 8-inihi. Ma waho aʻe o ka gallium nitride, loaʻa iā mākou kahi laina huahana o AlGaN/GaN-on-SiC epitaxial wafers e hoʻokō i nā pono o nā mea kūʻai aku no nā mea epitaxial gallium nitride.