200mm 8'īniha GaN ma ka substrate wafer Epi-layer sapphire
Hoʻolauna huahana
ʻO ka substrate 8-'īniha GaN-on-Sapphire kahi mea semiconductor kiʻekiʻe i haku ʻia me kahi papa Gallium Nitride (GaN) i ulu ʻia ma luna o kahi substrate Sapphire. Hāʻawi kēia mea i nā waiwai halihali uila maikaʻi loa a kūpono no ka hana ʻana i nā mea semiconductor mana kiʻekiʻe a me ke alapine kiʻekiʻe.
ʻAno Hana Hana
ʻO ke kaʻina hana hana e pili ana i ka ulu ʻana o kahi papa GaN ma kahi substrate Sapphire me ka hoʻohana ʻana i nā ʻano hana holomua e like me ka metal-organic chemical vapor deposition (MOCVD) a i ʻole molecular beam epitaxy (MBE). Hana ʻia ka deposition ma lalo o nā kūlana i kāohi ʻia e hōʻoia i ke kiʻekiʻe o ka kristal kiʻekiʻe a me ke kūlike o ka kiʻiʻoniʻoni.
Nā noi
Loaʻa i ka substrate 8-'īniha GaN-on-Sapphire nā noi nui ma nā ʻano like ʻole e like me nā kamaʻilio microwave, nā ʻōnaehana radar, ʻenehana uea ʻole, a me ka optoelectronics. ʻO kekahi o nā noi maʻamau:
1. Nā mea hoʻonui mana RF
2. ʻOihana kukui LED
3. Nā polokalamu kamaʻilio pūnaewele uea ʻole
4. Nā mea uila no nā wahi wela kiʻekiʻe
5. Onā mea hana ptoelectronic
Nā kikoʻī huahana
-Ka Ana: ʻO ka nui o ke substrate he 8 ʻīniha (200 mm) ke anawaena.
- ʻAno o ka ʻIli: Ua hoʻopulu ʻia ka ʻili i kahi laumania kiʻekiʻe a hōʻike i ka maikaʻi loa e like me ke aniani.
- Mānoanoa: Hiki ke hoʻopilikino ʻia ka mānoanoa o ka papa GaN ma muli o nā koi kikoʻī.
- Pūʻolo: Hoʻopili pono ʻia ke substrate i nā mea anti-static e pale aku i ka hōʻino ʻana i ka wā e lawe ʻia ai.
- Kūlana Pālahalaha: Loaʻa i ka substrate kahi kūlana pālahalaha kūikawā e kōkua ai i ka hoʻonohonoho ʻana o ka wafer a me ka lawelawe ʻana i ka wā o ke kaʻina hana ʻana o ka hāmeʻa.
- Nā palena ʻē aʻe: Hiki ke hoʻopilikino ʻia nā kikoʻī o ka mānoanoa, ka resistivity, a me ka nui o ka dopant e like me nā koi o ka mea kūʻai.
Me kona mau waiwai waiwai kiʻekiʻe a me nā hoʻohana like ʻole, ʻo ka substrate 8-inch GaN-on-Sapphire kahi koho hilinaʻi no ka hoʻomohala ʻana i nā hāmeʻa semiconductor hana kiʻekiʻe ma nā ʻoihana like ʻole.
Ma waho aʻe o GaN-On-Sapphire, hiki iā mākou ke hāʻawi aku i ke kahua o nā noi mana, ʻo ka ʻohana huahana e komo pū ana me nā wafers epitaxial AlGaN/GaN-on-Si 8-'īniha a me nā wafers epitaxial AlGaN/GaN-on-Si P-cap 8-'īniha. I ka manawa like, ua hana hou mākou i ka hoʻohana ʻana i kāna ʻenehana epitaxy GaN 8-'īniha holomua i ke kahua microwave, a ua hoʻomohala i kahi wafer epitaxy AlGaN/GAN-on-HR Si 8-'īniha e hoʻohui i ka hana kiʻekiʻe me ka nui nui, ke kumukūʻai haʻahaʻa a kūlike me ka hana ʻana o nā mea hana 8-'īniha maʻamau. Ma waho aʻe o ka gallium nitride i hoʻokumu ʻia i ka silicon, loaʻa iā mākou kahi laina huahana o nā wafers epitaxial AlGaN/GaN-on-SiC e hoʻokō i nā pono o nā mea kūʻai aku no nā mea epitaxial gallium nitride i hoʻokumu ʻia i ka silicon.
Kiʻikuhi kikoʻī
