50.8mm 2 iniha GaN ma ka sapphire Epi-layer wafer

ʻO ka wehewehe pōkole:

E like me ke kolu o ka hanauna semiconductor material, gallium nitride nā mea maikaʻi o ke kūpaʻa wela kiʻekiʻe, ka hoʻohālikelike kiʻekiʻe, ka conductivity thermal kiʻekiʻe a me ke ākea ākea. E like me nā mea substrate like ʻole, hiki ke hoʻokaʻawale ʻia nā pepa epitaxial gallium nitride i ʻehā mau ʻāpana: gallium nitride e pili ana i ka gallium nitride, silicon carbide based gallium nitride, sapphire based gallium nitride a me ka silicon based gallium nitride. ʻO ka pepa epitaxial gallium nitride e pili ana i ka silikon ka mea i hoʻohana nui ʻia me ke kumu kūʻai haʻahaʻa a me ka ʻenehana hana makua.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Ka hoʻohana ʻana i ka pepa epitaxial gallium nitride GaN

Ma muli o ka hana o ka gallium nitride, gallium nitride epitaxial chips i kūpono no ka mana kiʻekiʻe, ke alapine kiʻekiʻe, a me nā noi uila haʻahaʻa.

Hōʻike ʻia ma:

1) Paipai kiʻekiʻe: Hoʻonui ka bandgap kiʻekiʻe i ke kiʻekiʻe o ka volta o nā mea gallium nitride a hiki ke hoʻopuka i ka mana kiʻekiʻe aʻe ma mua o nā mea gallium arsenide, kahi kūpono loa no nā kahua kahua kamaʻilio 5G, radar pūʻali a me nā māla ʻē aʻe;

2) ʻO ka hoʻololi kiʻekiʻe kiʻekiʻe: ʻo ke kūpaʻa o ka gallium nitride hoʻololi i ka mana uila he 3 mau kauoha o ka nui ma lalo o nā mea silika, hiki ke hōʻemi nui i ka nalowale o ka hoʻololi;

3) ʻO ka conductivity thermal kiʻekiʻe: ʻo ka conductivity thermal kiʻekiʻe o ka gallium nitride e loaʻa iā ia ka hana hoʻoheheʻe wela maikaʻi loa, kūpono no ka hana ʻana i ka mana kiʻekiʻe, ka wela kiʻekiʻe a me nā ʻano hana ʻē aʻe;

4) Hoʻohaʻahaʻa i ka ikaika o ke kahua uila: ʻOiai ʻo ka haʻihaʻi ʻana o ka ikaika o ka gallium nitride kokoke i ka silicon nitride, ma muli o ke kaʻina semiconductor, nā mea lattice mismatch a me nā kumu ʻē aʻe, ʻo ka hoʻomanawanui ʻana o ka gallium nitride mea maʻamau ma kahi o 1000V, a me ka ʻO ka uila hoʻohana palekana ma lalo o 650V.

'ikamu	GaN-TCU-C50	GaN-TCN-C50	GaN-TCP-C50
Anana	e 50.8mm ± 0.1mm
mānoanoa	4.5±0.5 um		4.5±0.5um
Kūlana	C-plane(0001) ±0.5°
ʻAno hoʻokele	ʻAno N (Hoʻopau ʻole ʻia)	ʻAno N (Si-doped)	ʻAno-P (Mg-doped)
Palekana (3O0K)	< 0.5 Q・cm	< 0.05 Q・cm	~ 10 Q・cm
Kaʻa lawe	< 5x10¹⁷knm^-3	> 1x10¹⁸knm^-3	> 6x1016 knm^-3
Ka neʻe ʻana	~ 300 knm²/Vs	~ 200 knm²/Vs	~ 10 knm²/Vs
Paʻaʻawaʻawa	Ma lalo o 5x10⁸knm^-2(heluhelu ʻia e nā FWHM o XRD)
Kapili lepo	ʻO GaN ma Sapphire (Maʻamau: Koho SSP: DSP)
Wahi Ili Hiki ke hoohanaia	> 90%
Pūʻolo	Hoʻopili ʻia i loko o kahi lumi lumi maʻemaʻe papa 100, i nā cassette o 25pcs a i ʻole nā pahu wafer hoʻokahi, ma lalo o kahi lewa nitrogen.